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Nonvolatile memory device having variable resistance memory cells and a method of resetting by initially performing pre-read or strong set operation

  • US 9,552,879 B2
  • Filed: 10/03/2014
  • Issued: 01/24/2017
  • Est. Priority Date: 02/21/2014
  • Status: Active Grant
First Claim
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1. A method of programming a variable resistance memory cell in a nonvolatile memory device, the method comprising:

  • programming the variable resistance memory cell to one of a plurality of set states using a corresponding one of a plurality of compliance currents;

    pre-reading the variable resistance memory cell to determine the resistance of the variable resistance memory cell; and

    programming the variable resistance memory cell to a reset state using a variable reset voltage based on the determined resistance of the variable resistance memory cell, whereinthe variable reset voltage is one of a plurality of reset voltages respectively corresponding to the plurality of set states.

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