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Tungsten separation

  • US 9,553,102 B2
  • Filed: 08/19/2014
  • Issued: 01/24/2017
  • Est. Priority Date: 08/19/2014
  • Status: Expired due to Fees
First Claim
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1. A method of etching a patterned substrate, the method comprising:

  • placing the patterned substrate in a substrate processing region of a substrate processing chamber, wherein the patterned substrate comprises electrically-shorted tungsten slabs arranged in at least one of two adjacent vertical columns, wherein a trench is disposed between the two adjacent vertical columns;

    flowing a first fluorine-containing precursor into a chamber plasma region within the substrate processing chamber and exciting the first fluorine-containing precursor in a first remote plasma in the chamber plasma region to produce first plasma effluents, wherein the chamber plasma region is fluidly coupled with the substrate processing region through a showerhead and the first remote plasma is capacitively-coupled;

    flowing the first plasma effluents into the substrate processing region through the showerhead and isotropically etching the electrically-shorted tungsten slabs;

    flowing a second fluorine-containing precursor into a remote plasma system outside the substrate processing chamber and exciting the second fluorine-containing precursor in a second remote plasma with an external remote plasma power in the remote plasma system to produce second plasma effluents,wherein the second remote plasma is inductively-coupled with the external remote plasma power of between 2,000 watts and 10,000 watts;

    flowing the second plasma effluents into the substrate processing region; and

    anisotropically etching additional tungsten material.

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