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Semiconductor device and insulated gate bipolar transistor with barrier structure

  • US 9,553,179 B2
  • Filed: 01/31/2014
  • Issued: 01/24/2017
  • Est. Priority Date: 01/31/2014
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a continuous semiconductor mesa formed between cell trench structures extending from a first surface into a semiconductor body, the semiconductor mesa comprising a body zone forming a first pn junction with a drift zone between the body zone and a second surface opposite to the first surface;

    separated source zones formed in the semiconductor mesa at a first distance from each other along a longitudinal axis of the semiconductor mesa and forming second pn junctions with the body zone, wherein the longitudinal axis extends in a direction of the length of the semiconductor mesa and between the separated source zones the body zone directly adjoins the first surface; and

    a barrier structure in a portion of the semiconductor mesa between neighboring ones of the separated source zones, the barrier structure being absent at least in a vertical projection of the separated source zones perpendicular to the first surface and forming a unipolar homojunction with the drift zone outside of the vertical projection of the separated source zones.

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