Semiconductor device and insulated gate bipolar transistor with barrier structure
First Claim
1. A semiconductor device, comprising:
- a continuous semiconductor mesa formed between cell trench structures extending from a first surface into a semiconductor body, the semiconductor mesa comprising a body zone forming a first pn junction with a drift zone between the body zone and a second surface opposite to the first surface;
separated source zones formed in the semiconductor mesa at a first distance from each other along a longitudinal axis of the semiconductor mesa and forming second pn junctions with the body zone, wherein the longitudinal axis extends in a direction of the length of the semiconductor mesa and between the separated source zones the body zone directly adjoins the first surface; and
a barrier structure in a portion of the semiconductor mesa between neighboring ones of the separated source zones, the barrier structure being absent at least in a vertical projection of the separated source zones perpendicular to the first surface and forming a unipolar homojunction with the drift zone outside of the vertical projection of the separated source zones.
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Accused Products
Abstract
A semiconductor device includes a semiconductor mesa which is formed between cell trench structures extending from a first surface into a semiconductor body. The semiconductor mesa includes a body zone forming a first pn junction with a drift zone between the body zone and a second surface opposite to the first surface. Source zones are arranged along a longitudinal axis of the semiconductor mesa at a first distance from each other and form second pn junctions with the body zone. A barrier structure, which has the conductivity type of the source zones, forms at least one of a unipolar homojunction with the drift zone and a pn junction with the body zone at least outside a vertical projection of the source zones perpendicular to the first surface. The barrier structure may be absent in the vertical projection of the source zones.
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Citations
24 Claims
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1. A semiconductor device, comprising:
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a continuous semiconductor mesa formed between cell trench structures extending from a first surface into a semiconductor body, the semiconductor mesa comprising a body zone forming a first pn junction with a drift zone between the body zone and a second surface opposite to the first surface; separated source zones formed in the semiconductor mesa at a first distance from each other along a longitudinal axis of the semiconductor mesa and forming second pn junctions with the body zone, wherein the longitudinal axis extends in a direction of the length of the semiconductor mesa and between the separated source zones the body zone directly adjoins the first surface; and a barrier structure in a portion of the semiconductor mesa between neighboring ones of the separated source zones, the barrier structure being absent at least in a vertical projection of the separated source zones perpendicular to the first surface and forming a unipolar homojunction with the drift zone outside of the vertical projection of the separated source zones. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A semiconductor device, comprising:
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a continuous semiconductor mesa formed between cell trench structures extending from a first surface into a semiconductor body, the semiconductor mesa comprising a body zone forming a first pn junction with a drift zone between the body zone and a second surface opposite to the first surface; separated source zones formed in the semiconductor mesa at a first distance from each other along a longitudinal axis of the semiconductor mesa and forming second pn junctions with the body zone, wherein between the separated source zones the body zone directly adjoins the first surface and wherein the longitudinal axis is parallel to the first surface, parallel to an interface between the semiconductor mesa and the cell trench structures, and extends in a direction of the length of the semiconductor mesa; and a barrier structure in a portion of the semiconductor mesa between neighboring ones of the separated source zones, the barrier structure being separated from the drift zone and forming a pn junction with the body zone. - View Dependent Claims (18, 19)
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20. A semiconductor device, comprising:
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a continuous semiconductor mesa formed between cell trench structures extending from a first surface into a semiconductor body, the semiconductor mesa comprising a body zone forming a first pn junction with a drift zone between the body zone and a second surface opposite to the first surface; separated source zones formed in the semiconductor mesa at a first distance from each other along a longitudinal axis of the semiconductor mesa and forming second pn junctions with the body zone, wherein the longitudinal axis extends in a direction of the length of the semiconductor mesa and between the separated source zones the body zone directly adjoins the first surface; and a contiguous barrier structure of the conductivity type of the separated source zones, the contiguous barrier structure being disposed in the semiconductor mesa, being not interrupted along the longitudinal axis and forming, in the semiconductor mesa, a unipolar homojunction with the drift zone, wherein a net impurity concentration of the barrier structure continuously or in steps varies by at least 20% along the longitudinal axis between centers of two neighboring ones of the separated source zones. - View Dependent Claims (21, 22, 23, 24)
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Specification