Method for forming Ti-containing film by PEALD using TDMAT or TDEAT
First Claim
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1. A method for forming a TiN film on a substrate by plasma-enhanced atomic layer deposition (PEALD) using tetrakis(dimethylamino)titanium (TDMAT) or tetrakis(diethylamino)titanium (TDEAT), said PEALD comprising multiple deposition cycles, each deposition cycle comprising:
- (i) introducing TDMAT and/or TDEAT in a pulse to a reaction space where a substrate is placed;
(ii) continuously introducing a NH3-free reactant gas to the reaction space, wherein the NH3-free reactant gas contains neither nitrogen nor oxygen atoms and wherein the NH3-free reactant gas is H2; and
(iii) applying RF power in a pulse to the reaction space wherein the pulse of TDMAT and/or TDEAT and the pulse of RF power do not overlap; and
wherein (iv) steps (i) to (iii) are repeated to deposit a TiN film on the substrate, andsaid method further comprising;
setting a target film stress for the TiN film, which is greater than a film stress of a reference TiN crystalline film being deposited by steps (i) to (iv) under deposition conditions including a reference flow rate of H2 used as the reactant gas in step (ii), and reference RF power used in step (iii); and
setting a flow rate of H2 used as the reactant gas in step (ii), and RF power used in step (iii), wherein only one or more of the flow rate of H2, and the RF power are used as control parameters for changing the film stress, and are different from the reference flow rate of H2 and the reference RF power, followed by conducting steps (i) to (iv) for depositing the TiN film.
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Abstract
A method for forming a Ti-containing film on a substrate by plasma-enhanced atomic layer deposition (PEALD) using tetrakis(dimethylamino)titanium (TDMAT) or tetrakis(diethylamino)titanium (TDEAT), includes: introducing TDMAT and/or TDEAT in a pulse to a reaction space where a substrate is placed; continuously introducing a NH3-free reactant gas to the reaction space; applying RF power in a pulse to the reaction space wherein the pulse of TDMAT and/or TDEAT and the pulse of RF power do not overlap; and repeating the above steps to deposit a Ti-containing film on the substrate.
1631 Citations
8 Claims
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1. A method for forming a TiN film on a substrate by plasma-enhanced atomic layer deposition (PEALD) using tetrakis(dimethylamino)titanium (TDMAT) or tetrakis(diethylamino)titanium (TDEAT), said PEALD comprising multiple deposition cycles, each deposition cycle comprising:
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(i) introducing TDMAT and/or TDEAT in a pulse to a reaction space where a substrate is placed; (ii) continuously introducing a NH3-free reactant gas to the reaction space, wherein the NH3-free reactant gas contains neither nitrogen nor oxygen atoms and wherein the NH3-free reactant gas is H2; and (iii) applying RF power in a pulse to the reaction space wherein the pulse of TDMAT and/or TDEAT and the pulse of RF power do not overlap; and wherein (iv) steps (i) to (iii) are repeated to deposit a TiN film on the substrate, and said method further comprising; setting a target film stress for the TiN film, which is greater than a film stress of a reference TiN crystalline film being deposited by steps (i) to (iv) under deposition conditions including a reference flow rate of H2 used as the reactant gas in step (ii), and reference RF power used in step (iii); and setting a flow rate of H2 used as the reactant gas in step (ii), and RF power used in step (iii), wherein only one or more of the flow rate of H2, and the RF power are used as control parameters for changing the film stress, and are different from the reference flow rate of H2 and the reference RF power, followed by conducting steps (i) to (iv) for depositing the TiN film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Current AssigneeASM IP Holding B.V. (ASM International NV)
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Original AssigneeASM IP Holding B.V. (ASM International NV)
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InventorsOkabe, Tatsuhiro, Takamure, Noboru
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Primary Examiner(s)LOUIE, MANDY C
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Application NumberUS14/050,150Publication NumberTime in Patent Office1,210 DaysField of SearchNoneUS Class Current1/1CPC Class CodesC23C 16/308 OxynitridesC23C 16/34 Nitrides C23C16/303 takes p...C23C 16/36 CarbonitridesC23C 16/405 of refractory metals or ytt...C23C 16/4554 Plasma being used non-conti...C23C 16/45553 characterized by the use of...C23C 16/52 Controlling or regulating t...
