Vapor deposition systems and methods

• US 9,556,519 B2
• Filed: 11/27/2011
• Issued: 01/31/2017
• Est. Priority Date: 06/28/2004
• Status: Active Grant

• Current Assignee: Veeco Instruments Incorporated
• Original Assignee: Ultratech Incorporated (Veeco Instruments Incorporated)
• Inventors: Monsma, Douwe Johannes, Becker, Jill Svenja
• Primary Examiner(s): Lund, Jeffrie R
• Application Number:
  US13/304,676
• Publication Number:
  US 20120070581A1
• Time in Patent Office: 1,892 Days
• Field of Search: 118/715
• US Class Current: 1/1
• CPC Class Codes: B01D 2258/0216 from CVD treatment or semi-conductor manufacturing
• CPC Class Codes: B01D 53/0407 Constructional details of adsorbing systems
• CPC Class Codes: C23C 16/44 characterised by the method of coating C23C16/04 takes precedence
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: C23C 16/45544 characterized by the apparatus

Abstract

Vapor deposition systems and methods associated with the same are provided. The systems may be designed to include features that can promote high quality deposition; simplify manufacture, modification and use; as well as, reduce the footprint of the system, amongst other advantages.

Claims

1. An atomic layer deposition system comprising:

a cabinet having a cabinet top with multiple holes there through;

at least one precursor supply located in the cabinet under the cabinet top;

a reaction chamber located on the cabinet top and designed to enclose a substrate, the reaction chamber including a reactor base and a reactor lid;

wherein;

the reactor base is a single continuous structure that comprises;

an annular sidewall that defines a lateral extent of an enclosed reactor space of the reaction chamber;

an outer annular horizontal bottom surface including at least two openings therein; and

an inner substrate area for mounting a substrate thereon, the inner substrate area comprising a recessed horizontal bottom surface that is vertically recessed downward with respect the outer annular horizontal bottom surface;

the reactor lid is another single continuous structure whose bottom surface defines a top surface of the reactor space; and

the reactor base and the reactor lid are mechanically connected to provide an enclosed reactor space upon closing of the reactor lid and to provide access into the reaction chamber for loading the substrate after opening of the reactor lid; and

at least one precursor port having a respective outlet located in a respective opening among the at least two openings in the outer annular horizontal bottom surface of the reactor base, extending through a respective hole among the multiple holes in the cabinet top, and connected to the least one precursor supply.

2. The atomic layer deposition system of claim 1, wherein:

the at least one precursor supply comprises a first precursor supply and a second precursor supply; and

the at least one precursor port comprises a common precursor port that is connected to the first precursor supply and the second precursor supply.

3. The atomic layer deposition system of claim 2, further comprising a manifold including an outlet connected to the common precursor port and a first inlet connected to the first precursor supply via a first supply line and a second inlet connected to the second precursor supply via a second supply line.

4. The atomic layer deposition system of claim 3, wherein

the first supply line and the first precursor supply extend substantially vertically in a substantially straight line from the first inlet;

the second supply line and the second precursor supply extend substantially vertically in a substantially straight line from the second inlet;

the system further comprising a pumping line extending vertically in a substantially straight line from the outlet port to a vacuum pump;

wherein each of the manifold, the first supply line, the first precursor supply, the second supply line, and the second precursor supply are supported by the reactor base with no additional support.

5. The atomic layer deposition system of claim 2, further comprising:

a manifold disposed between each of the first and second precursor supplies and the common precursor port;

a first pulse valve disposed between first precursor supply and the precursor port for modulating delivery of pulses of the first precursor into the reaction chamber; and

a second pulse valve disposed between second precursor supply and the precursor port for modulating delivery of pulses of the second precursor into the reaction chamber.

6. The atomic layer deposition system of claim 5, further comprising an inert gas supply connected to the manifold for delivering inert gas into the reaction chamber through the common precursor port.

7. The atomic layer deposition system of claim 5, wherein at least one of the first and second pulse valves comprises three ports with one of the three ports always opened and wherein an inert gas supply is connected to the always opened port for delivering inert gas into the reaction chamber through the common precursor port.

8. The atomic layer deposition system of claim 5, wherein the first precursor supply comprises a monolayer-forming precursor and the second precursor supply comprises a second precursor that reacts with the monolayer to form a material layer comprising a compound on a substrate, the atomic layer deposition system further comprising:

a control system configured to control the operation of the atomic layer deposition system to cause the atomic layer deposition system to;

provide a pulse of the monolayer-forming first precursor into the reaction chamber;

remove gaseous species from the reaction chamber, the gaseous species including at least one of unreacted first precursor and reaction products; and

provide a pulse of the second precursor into the reaction chamber to form the layer comprising a compound on the substrate.

9. The atomic layer deposition system of claim 1, wherein the at least one precursor port comprises a first precursor port and a second precursor port, and a first precursor supply and a second precursor supply are respectively connected to the first precursor port and the second precursor port.

10. The atomic layer deposition system of claim 9 further comprising;

a first supply line having an inlet connected to the first precursor supply and an outlet connected to the reactor base to distribute the first precursor into the reaction chamber through the first precursor port;

a second supply line having an inlet connected to the second precursor supply and an outlet connected to the reactor base to distribute the second precursor into the reaction chamber through the second precursor port;

wherein each of the first and second supply lines and each of the first and second precursor supplies extend substantially vertically in a substantially straight line from the reactor base with no additional support.

11. The atomic layer deposition system of claim 1, further comprising a vacuum pump located in the cabinet and an outlet port having an end portion located in one of the at least two openings in the annular horizontal bottom surface of the reactor base, extending through one hole among the multiple holes through the cabinet top, and connected to the vacuum pump, wherein the at least one precursor port is located on a substantially opposite side of the inner substrate area with respect to the outlet port.

12. The atomic layer deposition of claim 11, wherein at least one of:

(a) a first precursor supply and a second precursor supply are connected to a same precursor port among the at least one precursor port in a precursor port area within the outer annular horizontal bottom surface of the reactor base, and

(b) a first precursor supply and a second precursor supply are respectively connected to a first precursor port and a second precursor port among the at least one precursor port in a precursor port area within the outer annular horizontal bottom surface of the reactor base.

13. The atomic layer deposition system of claim 1,

wherein the bottom surface of the reactor lid and the inner sidewall of the reactor base are free of any type of port.

14. The atomic layer deposition system of claim 13, wherein the reactor lid is pivotally attached to the reactor base and the lid is drawn into mechanical contact with the reactor base by operation of a vacuum pump drawing through an outlet port of the reaction chamber.

15. The atomic layer deposition system of claim 1,

wherein an outlet of the at least one precursor port has a respective central axis that is substantially perpendicular to the outer annular horizontal bottom surface of the reactor base, and

the atomic layer deposition system further comprises an outlet port located in one of the at least two openings in the annular horizontal bottom surface.

16. The atomic layer deposition system of claim 15, wherein one of the at least one precursor port and the outlet port provide a flow path such that a precursor flows up out of the at least one precursor port outlet on one side of a substrate supported on the inner substrate area, flows over an upper surface of the substrate supported on the inner substrate area to form a material layer on the substrate, and then flows down into an inlet of the outlet port.

17. The atomic layer deposition system of claim 15, wherein the respective central axis is perpendicular to the annular horizontal bottom surface of the reactor base.

18. The atomic layer deposition system of claim 1, wherein the bottom surface of the reactor lid comprises a protruding portion that protrudes into the reaction chamber to decrease a vertical height of the reactor space.

19. The atomic layer deposition system of claim 1, wherein the bottom surface of the reactor lid comprises a cavity to increase a vertical height of the reactor space.

20. The atomic layer deposition system of claim 1, wherein the inner sidewall of the reactor base and the bottom surface of the reactor lid are free of precursor ports and free of outlet ports.