Gas sensors and methods of preparation thereof
First Claim
1. A device, comprising:
- a conductometric porous silicon gas sensor including a n-type silicon substrate having a porous silicon layer, wherein the n-type silicon substrate is an n+-type silicon substrate, wherein a plurality of nanostructures are disposed on a portion of the porous silicon layer,wherein the conductometric porous silicon gas sensor is operative to transduce the presence of a gas into an impedance change, wherein the impedance change correlates to the gas concentration.
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Accused Products
Abstract
Embodiments of the present disclosure include sensors, arrays of conductometric sensors, devices including conductometric sensors, methods of making conductometric sensors, methods of using conductometric gas sensors, and the like. One exemplary embodiment of a device, among others, includes: a conductometric gas sensor including a n-type substrate having a porous layer, wherein a plurality of ‘nanostructures are disposed on a portion of the porous layer, wherein the nanostructure provides a fractional coverage on the porous layer, wherein the conductometric gas sensor is operative to transduce the presence of a gas into an impedance change, wherein the impedance change correlates to the gas concentration.
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Citations
63 Claims
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1. A device, comprising:
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a conductometric porous silicon gas sensor including a n-type silicon substrate having a porous silicon layer, wherein the n-type silicon substrate is an n+-type silicon substrate, wherein a plurality of nanostructures are disposed on a portion of the porous silicon layer, wherein the conductometric porous silicon gas sensor is operative to transduce the presence of a gas into an impedance change, wherein the impedance change correlates to the gas concentration. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of detecting a concentration of a gas, comprising:
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providing a conductometric porous silicon gas sensor including a n-type silicon substrate having a porous silicon layer, wherein a plurality of nanostructures are disposed on a portion of the porous silicon layer, wherein the conductometric porous silicon gas sensor is operative to transduce the presence of a gas into an impedance change, wherein the impedance change correlates to the gas concentration; introducing the gas to the sensor; and measuring an impedance change in the sensor at room temperature. - View Dependent Claims (15, 16, 17, 18)
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19. A device, comprising:
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a conductometric gas sensor including a n-type substrate having a porous layer, wherein a plurality of nanostructures are disposed on a portion of the porous layer, wherein the nanostructure provides a fractional coverage on the porous layer, wherein the conductometric gas sensor is operative to transduce the presence of a gas into an impedance change, wherein the impedance change correlates to the gas concentration, wherein the n-type substrate is selected from the group consisting of;
n- or n+-type doped wafer and n- or n+-type phosphorous doped wafer. - View Dependent Claims (20, 21, 22, 23, 24, 25)
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26. A device, comprising:
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a conductometric porous silicon gas sensor including a n-type silicon substrate having a porous silicon layer, wherein a plurality of nanostructures are disposed on a portion of the porous silicon layer, wherein the conductometric porous silicon gas sensor is operative to transduce the presence of a gas into an impedance change, wherein the impedance change correlates to the gas concentration, wherein the porous silicon region has a hybrid microporous/nanoporous framework, wherein the walls of the microporous framework are superimposed with a nanoporous layer. - View Dependent Claims (27, 28, 29, 30, 31)
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32. A device, comprising:
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a conductometric porous silicon gas sensor including a n-type silicon substrate having a porous silicon layer, wherein a plurality of nanostructures are disposed on a portion of the porous silicon layer, wherein the conductometric porous silicon gas sensor is operative to transduce the presence of a gas into an impedance change, wherein the impedance change correlates to the gas concentration, wherein the conductometric porous silicon gas sensor is operative to measure the impedance change corresponding to a gas concentration at less than 100 parts per billion. - View Dependent Claims (33, 34, 35, 36, 37)
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38. A device, comprising:
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a conductometric porous silicon gas sensor including a n-type silicon substrate having a porous silicon layer, wherein a plurality of nanostructures are disposed on a portion of the porous silicon layer, wherein the conductometric porous silicon gas sensor is operative to transduce the presence of a gas into an impedance change, wherein the impedance change correlates to the gas concentration, wherein the conductometric porous silicon gas sensor is operative to measure the impedance change at room temperature. - View Dependent Claims (39, 40, 41, 42)
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43. A device, comprising:
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a conductometric gas sensor including a n-type substrate having a porous layer, wherein a plurality of nanostructures are disposed on a portion of the porous layer, wherein the nanostructure provides a fractional coverage on the porous layer, wherein the conductometric gas sensor is operative to transduce the presence of a gas into an impedance change, wherein the impedance change correlates to the gas concentration, wherein the conductometric porous silicon gas sensor is operative to transduce the presence of a gas into an impedance change, wherein the impedance change correlates to the gas concentration. - View Dependent Claims (44, 45, 46, 47)
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48. A device, comprising:
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a conductometric gas sensor including a n-type substrate having a porous layer, wherein a plurality of nanostructures are disposed on a portion of the porous layer, wherein the nanostructure provides a fractional coverage on the porous layer, wherein the conductometric gas sensor is operative to transduce the presence of a gas into an impedance change, wherein the impedance change correlates to the gas concentration, wherein the porous silicon region has a hybrid microporous/nanoporous framework, wherein the walls of the microporous framework are superimposed with a nanoporous layer. - View Dependent Claims (49, 50, 51, 52)
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53. A device, comprising:
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a conductometric gas sensor including a n-type substrate having a porous layer, wherein a plurality of nanostructures are disposed on a portion of the porous layer, wherein the nanostructure provides a fractional coverage on the porous layer, wherein the conductometric gas sensor is operative to transduce the presence of a gas into an impedance change, wherein the impedance change correlates to the gas concentration, wherein the conductometric porous silicon gas sensor is operative to measure the impedance change corresponding to a gas concentration at less than 100 parts per billion. - View Dependent Claims (54, 55, 56, 57)
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58. A device, comprising:
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a conductometric gas sensor including a n-type substrate having a porous layer, wherein a plurality of nanostructures are disposed on a portion of the porous layer, wherein the nanostructure provides a fractional coverage on the porous layer, wherein the conductometric gas sensor is operative to transduce the presence of a gas into an impedance change, wherein the impedance change correlates to the gas concentration, wherein the conductometric porous silicon gas sensor is operative to measure the impedance change at room temperature. - View Dependent Claims (59, 60, 61, 62, 63)
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Specification