Adjustable non-dissipative voltage boosting snubber network for achieving large boost voltages

• US 9,558,917 B2
• Filed: 07/28/2016
• Issued: 01/31/2017
• Est. Priority Date: 11/01/2012
• Status: Active Grant

• Current Assignee: AES Global Holdings Pte Ltd. (Advanced Energy Industries, Inc. (China))
• Original Assignee: Advanced Energy Industries Incorporated
• Inventors: Finley, Kenneth W., Walde, Hendrik
• Primary Examiner(s): King, Monica C
• Application Number:
  US15/222,597
• Publication Number:
  US 20160336148A1
• Time in Patent Office: 187 Days
• US Class Current: 1/1
• CPC Class Codes: H01J 37/32027 DC powered
• CPC Class Codes: H01J 37/32055 Arc discharge
• CPC Class Codes: H01J 37/32064 Circuits specially adapted for controlling the arc discharge for plasma torches H01H1/36
• CPC Class Codes: H01J 37/34 operating with cathodic sputtering H01J37/36 takes precedence ; methods of cathodic sputtering C23C14/34
• CPC Class Codes: H05H 1/46 using applied electromagnetic fields, e.g. high frequency or microwave energy H05H1/26 takes precedence
• CPC Class Codes: H05H 2242/26 Matching networks

Abstract

This disclosure describes a non-dissipative snubber circuit configured to boost a voltage applied to a load after the load'"'"'s impedance rises rapidly. The voltage boost can thereby cause more rapid current ramping after a decrease in power delivery to the load which results from the load impedance rise. In particular, the snubber can comprise a combination of a unidirectional switch, a voltage multiplier, and a current limiter. In some cases, these components can be a diode, voltage doubler, and an inductor, respectively.

Claims

1. A pulsed DC power supply system configured to provide pulsed DC power to a plurality of anodeless electrodes of a plasma processing chamber, the pulsed DC power supply comprising:

a switching circuit coupled to first and second rails and receiving a first DC power via the first and second rails and converting the first DC power to a first pulsed DC voltage for delivery to at least a first anodeless electrode of a plasma processing chamber; and

a voltage-boosting circuit coupled between the first and second rails, the voltage-boosting circuit comprising;

a first diode coupled between the first rail and a first electrical node, an anode of the first diode being at a voltage of the first rail;

a voltage multiplier coupled between the first electrical node and the second rail;

a current limiter coupled between the first rail and a second electrical node;

a first switch selectively coupling the first electrical node and a second electrical node; and

a second diode coupled between the second rail and the second electrical node, an anode of the second diode being at a voltage of the second rail.

2. The pulsed DC power supply system of claim 1, further comprising a third diode having an anode coupled to the second electrical node and a cathode coupled to the first electrical node, the third diode coupled in parallel with the first switch.

3. The pulsed DC power supply system of claim 1, wherein the voltage multiplier includes a capacitive element coupled between the first electrical node and the second rail.

4. The pulsed DC power supply system of claim 3, wherein the voltage multiplier includes two capacitive elements arranged to charge in series and discharge in parallel.

5. The pulsed DC power supply system of claim 4, wherein the voltage multiplier has two outputs:

one coupled to the first electrical node; and

one coupled to a second inductive element, the second inductive element coupled between the voltage multiplier and a third electrical node.

6. The pulsed DC power supply system of claim 4, wherein a first of the two capacitive elements is arranged to discharge through the first switch and the current limiter and the second of the two capacitive elements is arranged to discharge through (1) one of the outputs of the voltage multiplier, (2) the second inductive element, and (3) the second diode.

7. The pulsed DC power supply system of claim 4, wherein the voltage multiplier further includes at least a third and a fourth diode, the third diode coupled between the first and second capacitive elements, and wherein the fourth diode is arranged between the second rail and the third diode such that a cathode of the fourth diode is at a voltage of an anode of the third diode.

8. The pulsed DC power supply system of claim 5, wherein a controller closes the first switch when the controller determines that a voltage between the first and second rails has reached or exceeded a first threshold, V_max, and opens the first switch when the controller determines that the voltage between the first and second rails has reached or fallen below a second threshold, V_min.

9. The pulsed DC power supply system of claim 5, further comprising a second switch selectively coupling the second rail and the third electrical node.

10. The pulsed DC power supply system of claim 9, further comprising a voltage sensor coupled across the second of the two capacitive elements, wherein the second switch has a duty cycle that is a function of a voltage across the second of the two capacitive elements as measured by the voltage sensor.

11. The pulsed DC power supply system of claim 1, wherein the voltage-boosting circuit is part of a DC power supply coupled to and providing a first DC power to the first and second rails, such that a rail voltage exists across the first and second rails.

12. The pulsed DC power supply system of claim 1, wherein the voltage-boosting circuit is part of the switching circuit.

13. The pulsed DC power supply system of claim 1, wherein the first switch is selected from the group consisting of:

insulated-gate bipolar transistors (IGBTs), bipolar junction transistors, and field effect transistors.

14. The pulsed DC power supply system of claim 1, wherein the voltage-boosting circuit increases a rail voltage V_AB between the first and second rails by at least a factor of two when an impedance of a plasma load of the plasma substantially decreases.

15. A pulsed DC power supply system configured to provide pulsed DC power to a plurality of anodeless electrodes of a plasma processing chamber, the pulsed DC power supply comprising:

a DC power supply coupled to and providing a first DC power to a first and second rail, such that a rail voltage exists across the first and second rails;

a voltage-boosting circuit coupled between the first and second rails, the voltage-boosting circuit comprising;

a first diode coupled between the first rail and a first electrical node, an anode of the first diode being at a voltage of the first rail;

a voltage multiplier coupled between the first electrical node and the second rail;

a current limiter coupled between the first rail and a second electrical node;

a first switch selectively coupling the first electrical node and a second electrical node; and

a second diode coupled between the second rail and the second electrical node, an anode of the second diode being at a voltage of the second rail.

16. The pulsed DC power supply system of claim 15, further comprising a switching circuit coupled to the first and second rails and receiving the first DC power via the first and second rails and converting the first DC power to a first pulsed DC voltage configured for delivery to at least a first anodeless electrode of the plasma processing chamber.

17. The pulsed DC power supply system of claim 15, further comprising a third diode having an anode coupled to the second electrical node and a cathode coupled to the first electrical node, the third diode coupled in parallel with the first switch.

18. The pulsed DC power supply system of claim 15, wherein the voltage multiplier includes a capacitive element coupled between the first electrical node and the second rail.

19. The pulsed DC power supply system of claim 18, wherein the voltage multiplier includes two capacitive elements arranged to charge in series and discharge in parallel.

20. The pulsed DC power supply system of claim 19, wherein the voltage multiplier has two outputs:

one coupled to the first electrical node; and

one coupled to a second inductive element, the second inductive element coupled between the voltage multiplier and a third electrical node.

21. The pulsed DC power supply system of claim 19, wherein a first of the two capacitive elements is arranged to discharge through the first switch and the current limiter and the second of the two capacitive elements is arranged to discharge through (1) one of the outputs of the voltage multiplier, (2) the second inductive element, and (3) the second diode.

22. The pulsed DC power supply system of claim 19, wherein the voltage multiplier further includes at least a third and a fourth diode, the third diode coupled between the first and second capacitive elements, and wherein the fourth diode is arranged between the second rail and the third diode such that a cathode of the fourth diode is at a voltage of an anode of the third diode.

23. The pulsed DC power supply system of claim 20, wherein a controller closes the first switch when the controller determines that a voltage between the first and second rails has reached or exceeded a first threshold, V_max, and opens the first switch when the controller determines that the voltage between the first and second rails has reached or fallen below a second threshold, V_min.

24. The pulsed DC power supply system of claim 20, further comprising a second switch selectively coupling the second rail and the third electrical node.

25. The pulsed DC power supply system of claim 24, further comprising a voltage sensor coupled across the second of the two capacitive elements, wherein the second switch has a duty cycle that is a function of a voltage across the second of the two capacitive elements as measured by the voltage sensor.

26. The pulsed DC power supply system of claim 15, wherein the voltage-boosting circuit is part of the DC power supply.

27. The pulsed DC power supply system of claim 16, wherein the voltage-boosting circuit is part of the switching circuit.

28. The pulsed DC power supply system of claim 15, wherein the first switch is selected from the group consisting of:

insulated-gate bipolar transistors (IGBTs), bipolar junction transistors, and field effect transistors.

29. The pulsed DC power supply system of claim 15, wherein the voltage-boosting circuit increases a rail voltage V_AB between the first and second rails by at least a factor of two when an impedance of a plasma load of the plasma substantially decreases.

30. A method of operating a voltage-boosting circuit arranged between a first and second rail carrying DC current to a switching circuit that converts DC current on the first and second rails to a pulsed DC voltage and provides the pulsed DC voltage across a plasma load of a plasma processing chamber, the method comprising:

providing a voltage-boosting circuit coupled between the first and second rails, the voltage-boosting circuit comprising;

a first diode coupled between the first rail and a first electrical node, an anode of the first diode being at a voltage of the first rail;

a voltage multiplier coupled between the first electrical node and the second rail;

a current limiter coupled between the first rail and a second electrical node;

a first switch selectively coupling the first electrical node and a second electrical node; and

a second diode coupled between the second rail and the second electrical node, an anode of the second diode being at a voltage of the second rail; and

maintaining the switch in an off state until charging of the capacitive element causes a voltage across the capacitive element to be at least twice a process voltage for the plasma.

31. The method of claim 30, further comprising turning the switch to an off state and discharging the capacitive element through the switch and the current limiter until a voltage between the first and second rails fall below a voltage needed to forward bias the first diode.

32. The method of claim 31, further comprising maintaining the switch in the off state until the switching circuit alters the polarity of the pulsed DC voltage and the first diode is forward biased.