Selective wet etching and textured surface planarization processes

• US 9,558,954 B2
• Filed: 04/22/2011
• Issued: 01/31/2017
• Est. Priority Date: 04/22/2010
• Status: Active Grant

• Current Assignee: Luminus Devices Incorporated (Sanan Optoelectronics Company Limited)
• Original Assignee: Luminus Devices Incorporated (Sanan Optoelectronics Company Limited)
• Inventors: Duncan, Scott W., Lu, Hong
• Primary Examiner(s): Olsen, Allan
• Assistant Examiner(s): Klunk, Margaret D
• Application Number:
  US13/092,464
• Publication Number:
  US 20110263128A1
• Time in Patent Office: 2,111 Days
• Field of Search: 438/745
• US Class Current: 1/1
• CPC Class Codes: H01L 21/30612 Etching of AIIIBV compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

The present invention relates to systems and methods associated with selective wet etching and textured surface planarization. The systems and methods described herein can be used to etch a component of a multi-layer stack, such as a GaN layer. In some embodiments, the multi-layer stack can include a substrate having a patterned surface and a light generating region. The substrate can be removed from the first multi-layer stack to form a second multi-layer stack. In some embodiments, the pattern on the surface of the substrate can leave behind a pattern on a surface of the second multi-layer stack. Accordingly, in some cases, the surface of the second multi-layer stack can be wet etched, for example, to smoothen the surface. In some embodiments, removing the substrate can expose an N-face of a GaN layer, and the wet etch can be performed such that the N-face of the GaN layer is etched. In some embodiments, the multi-layer stack includes a light generating region and can be part of a light emitting device.

Claims

1. A method, comprising:

providing a first multi-layer stack, comprising;

a substrate including a patterned surface; and

a light generating region;

removing the substrate from the first multi-layer stack to form a second multi-layer stack; and

smoothening an emission surface of a GaN layer of the second multi-layer stack by wet etching the emission surface of the GaN layer, wherein all of the smoothening of the emission surface is achieved by wet etching and the emission surface is not mechanically polished; and

forming an LED configured to emit light generated by the light generating region through the emission surface.

2. The method of claim 1, wherein the substrate comprises sapphire, silicon, and/or silicon carbide.

3. The method of claim 1, wherein wet etching the emission surface of the GaN layer of the second multi-layer stack is performed in the absence of dry etching.

4. The method of claim 1, wherein the first multi-layer stack comprises a sacrificial layer.

5. The method of claim 4, wherein removing the substrate from the first multi-layer stack comprises decomposing at least a portion of the sacrificial layer.

6. The method of claim 1, wherein wet etching the emission surface of the GaN layer of the second multi-layer stack comprises wet etching an emission surface of the GaN layer of the second multi-layer stack that is exposed upon removal of the substrate.

7. The method of claim 1, wherein wet etching comprises exposing the emission surface of the GaN layer of the second multi-layer stack to an etchant comprising an acid and/or an oxidizing agent.

8. The method of claim 7, wherein the acid comprises phosphoric acid and/or nitric acid.

9. The method of claim 7, wherein the oxidizing agent comprises hydrogen peroxide and/or nitric acid.