Method of manufacturing semiconductor device
First Claim
1. A method of manufacturing a semiconductor device including a first semiconductor chip having a first coil, a second semiconductor chip having a second coil, and an insulating sheet interposed between the first and second semiconductor chips, the first and second semiconductor chips being stacked via the insulating sheet, and the first and second coils being magnetically coupled to each other, the method comprising the steps of:
- (a) providing the first semiconductor chip;
(b) providing the second semiconductor chip; and
(c) stacking the first and second semiconductor chips via the insulating sheet so as to magnetically couple the first and second coils to each other;
wherein the step (a) includes the steps of;
(a1) forming a first wiring structure having one or more wiring layers and including the first coil over a first semiconductor substrate;
(a2) forming a first insulating film over the first wiring structure; and
(a3) planarizing an upper surface of the first insulating film,wherein the step (b) includes the steps of;
(b1) forming a second wiring structure having one or more wiring layers and including the second coil over a second semiconductor substrate;
(b2) forming a second insulating film over the second wiring structure; and
(b3) planarizing an upper surface of the second insulating film, andwherein, in the step (c), the first and second semiconductor chips are stacked via the insulating sheet with the first insulating film of the first semiconductor chip and the second insulating film of the second semiconductor chip facing each other.
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Accused Products
Abstract
An improvement is achieved in the reliability of a semiconductor device by preventing a dielectric breakdown between two semiconductor chips facing each other. During the manufacturing of first and second semiconductor chips, the process of planarizing the upper surfaces of insulating films is performed. Then, the first and second semiconductor chips are stacked via an insulating sheet with the respective insulating films of the first and second semiconductor chips facing each other such that the respective coils of the first and second semiconductor chips are magnetically coupled to each other.
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Citations
12 Claims
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1. A method of manufacturing a semiconductor device including a first semiconductor chip having a first coil, a second semiconductor chip having a second coil, and an insulating sheet interposed between the first and second semiconductor chips, the first and second semiconductor chips being stacked via the insulating sheet, and the first and second coils being magnetically coupled to each other, the method comprising the steps of:
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(a) providing the first semiconductor chip; (b) providing the second semiconductor chip; and (c) stacking the first and second semiconductor chips via the insulating sheet so as to magnetically couple the first and second coils to each other; wherein the step (a) includes the steps of; (a1) forming a first wiring structure having one or more wiring layers and including the first coil over a first semiconductor substrate; (a2) forming a first insulating film over the first wiring structure; and (a3) planarizing an upper surface of the first insulating film, wherein the step (b) includes the steps of; (b1) forming a second wiring structure having one or more wiring layers and including the second coil over a second semiconductor substrate; (b2) forming a second insulating film over the second wiring structure; and (b3) planarizing an upper surface of the second insulating film, and wherein, in the step (c), the first and second semiconductor chips are stacked via the insulating sheet with the first insulating film of the first semiconductor chip and the second insulating film of the second semiconductor chip facing each other. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification