Three-dimensional semiconductor architecture
First Claim
1. A method of manufacturing a semiconductor device, the method comprising:
- forming first active devices at least partially within a first surface of a substrate, wherein the substrate comprises a second surface, an interior region, and a periphery region surrounding the interior region;
forming a first set of through substrate vias within the periphery region and extending from the first surface of the substrate to the second surface of the substrate; and
forming a second set of through substrate vias within the interior region and extending from the first surface of the substrate to the second surface of the substrate, wherein the second set of through substrate vias are part of a power matrix, the second set of through substrate vias bisecting the substrate into a first part and a second part.
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Abstract
A system and method for making semiconductor die connections with through-substrate vias are disclosed. Through substrate vias are formed through the substrate to allow for signal connections as well as power and ground connections. In one embodiment the substrate has an interior region and a periphery region surrounding the interior region. A first set of through substrate vias are located within the periphery region, and a second set of through substrate vias are located within the interior region, wherein the second set of through substrate vias are part of a power matrix. The second set of through substrate vias bisect the substrate into a first part and a second part.
74 Citations
20 Claims
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1. A method of manufacturing a semiconductor device, the method comprising:
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forming first active devices at least partially within a first surface of a substrate, wherein the substrate comprises a second surface, an interior region, and a periphery region surrounding the interior region; forming a first set of through substrate vias within the periphery region and extending from the first surface of the substrate to the second surface of the substrate; and forming a second set of through substrate vias within the interior region and extending from the first surface of the substrate to the second surface of the substrate, wherein the second set of through substrate vias are part of a power matrix, the second set of through substrate vias bisecting the substrate into a first part and a second part. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of manufacturing a semiconductor device, the method comprising:
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forming active devices located at least partially within a first surface of a substrate, the substrate further comprising a second surface opposite the first surface; forming a first plurality of through vias around a periphery of the substrate and extending from the first surface of the substrate to the second surface of the substrate; and creating a set of power matrix through vias located within an interior of the substrate and extending from the first surface of the substrate to the second surface of the substrate, the interior being surrounded by the periphery, wherein the set of power matrix through vias are arranged in at least one straight line. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
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16. A method of manufacturing a semiconductor device, the method comprising:
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forming a first via last through via extending through a first semiconductor die, the first semiconductor die further comprising a first active device at least partially within a first surface of a substrate; forming a second via last through via extending through a second semiconductor; forming a first set of through vias extending through a periphery region of the substrate of the first semiconductor die, the through vias extending between the first surface and a second surface of the first semiconductor die; and forming a second set of through vias extending through an interior region of the substrate between the first surface and the second surface of the first semiconductor die, the second set of through vias being a portion of a power matrix; and bonding the first semiconductor die to the second semiconductor die, wherein after the bonding the second via last through via is in electrical connection with the first via last through via and the second set of through vias are in physical contact with a metallization layer adjacent to the first active device. - View Dependent Claims (17, 18, 19, 20)
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Specification