×

Magnetic random access memory element having tantalum perpendicular enhancement layer

  • US 9,559,144 B2
  • Filed: 06/03/2015
  • Issued: 01/31/2017
  • Est. Priority Date: 12/10/2010
  • Status: Active Grant
First Claim
Patent Images

1. A magnetic random access memory device comprising a plurality of memory elements, each of said memory elements including a magnetic tunnel junction (MTJ) structure in between a non-magnetic seed layer and a non-magnetic cap layer, said MTJ structure comprising a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween, wherein said magnetic reference layer structure includes a first magnetic reference layer formed adjacent to said insulating tunnel junction layer and a second magnetic reference layer separated from said first magnetic reference layer by a first non-magnetic perpendicular enhancement layer with said first and second magnetic reference layers having a first fixed magnetization direction substantially perpendicular to layer planes thereof, said magnetic free layer structure includes two magnetic free layers with a second non-magnetic perpendicular enhancement layer interposed therebetween, said two magnetic free layers having variable magnetization directions that are substantially perpendicular to layer planes thereof and are parallel to each other.

View all claims
  • 7 Assignments
Timeline View
Assignment View
    ×
    ×