Fabrication of shielded gate trench MOSFET with increased source-metal contact
First Claim
1. A semiconductor device formed on a semiconductor substrate having a substrate top surface, comprising:
- a gate trench extending from the substrate top surface into the semiconductor substrate;
a gate electrode in the gate trench;
a gate top dielectric material disposed over the gate electrode;
a body region adjacent to the gate trench;
a source region embedded in the body region;
a metal layer disposed over at least a portion of a gate trench opening and at least a portion of the source region, wherein;
the source region has a curved sidewall portion that is adjacent to the gate trench, and that extends above the gate top dielectric material.
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Accused Products
Abstract
A semiconductor device formed on a semiconductor substrate having a substrate top surface, comprising: a gate trench extending from the substrate top surface into the semiconductor substrate; a gate electrode in the gate trench; a gate top dielectric material disposed over the gate electrode; a body region adjacent to the gate trench; a source region embedded in the body region; a metal layer disposed over at least a portion of a gate trench opening and at least a portion of the source region, wherein: the source region has a curved sidewall portion that is adjacent to the gate trench, and that extends above the gate top dielectric material.
4 Citations
14 Claims
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1. A semiconductor device formed on a semiconductor substrate having a substrate top surface, comprising:
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a gate trench extending from the substrate top surface into the semiconductor substrate; a gate electrode in the gate trench; a gate top dielectric material disposed over the gate electrode; a body region adjacent to the gate trench; a source region embedded in the body region; a metal layer disposed over at least a portion of a gate trench opening and at least a portion of the source region, wherein; the source region has a curved sidewall portion that is adjacent to the gate trench, and that extends above the gate top dielectric material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A semiconductor device formed on a semiconductor substrate having a substrate top surface, comprising:
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a gate trench extending from the substrate top surface into the semiconductor substrate; a first electrode disposed in the gate trench; a second electrode disposed in the gate trench; a dielectric material disposed in the gate trench, above the first electrode and the second electrode; a body region adjacent to the gate trench; a source region embedded in the body region; a contact trench that allows contact between the source region and the body region; and a metal layer disposed over at least a portion of a gate trench opening and at least a portion of the source region;
wherein;the source region extends above a top side of the dielectric material; the source region has a first side that is substantially aligned with a sidewall of the gate trench, and a second side that is substantially aligned with a sidewall of the contact trench; and the metal layer is in contact with the source region at at least a portion of the first side and at least a portion of the second side. - View Dependent Claims (14)
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Specification