FinFETs with necking in the fins

• US 9,559,206 B2
• Filed: 09/04/2015
• Issued: 01/31/2017
• Est. Priority Date: 12/27/2013
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Fan, Chun-Hsiang, Lu, Kun-Yen, Huang, Yu-Lien, Tsai, Ming-Huan
• Primary Examiner(s): DANG, PHUC T
• Application Number:
  US14/845,983
• Publication Number:
  US 20150380559A1
• Time in Patent Office: 515 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/76224 using trench refilling with dielectric materials trench filling with polycristalline silicon H01L21/763; together with vertical isolation, e.g. trench refilling in a SOI substrate H01L21/76264
• CPC Class Codes: H01L 29/0653 adjoining the input or output region of a field-effect device, e.g. the source or drain region
• CPC Class Codes: H01L 29/1054 with a variation of the composition, e.g. channel with strained layer for increasing the mobility
• CPC Class Codes: H01L 29/165 in different semiconductor regions , e.g. heterojunctions
• CPC Class Codes: H01L 29/66545 using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
• CPC Class Codes: H01L 29/66795 with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/785 having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/7851 with the body tied to the substrate

Abstract

A method includes forming isolation regions in a semiconductor substrate, forming a first semiconductor strip between opposite portions of isolation regions, forming a second semiconductor strip overlying and contacting the first semiconductor strip, and performing a first recessing to recess the isolation regions. A portion of the second semiconductor strip over top surfaces of remaining portions of the isolation regions forms a semiconductor fin. A second recessing is performed to recess the isolation regions to extend the semiconductor fin downwardly, with an inter-diffusion region of the first semiconductor strip and the second semiconductor strip being exposed after the second recessing. The inter-diffusion region is then etched.

Claims

1. An integrated circuit device comprising:

a semiconductor region comprising;

an upper portion having a first width;

a lower portion overlapped by the upper portion and having a second width; and

a middle portion overlapped by the upper portion and overlapping the lower portion, wherein a narrowest part of the semiconductor region is in the middle portion, and widths of the semiconductor region gradually increase from the narrowest part to the upper portion, and gradually increase from the narrowest part to the lower portion, and the middle portion has a gradually changed germanium atomic percentage;

a gate dielectric on a top surface and sidewalls of the semiconductor region, wherein the gate dielectric extends below the narrowest part; and

a gate electrode over the gate dielectric.

2. The integrated circuit device of claim 1, wherein the upper portion has a first germanium atomic percentage, and the lower portion has a second germanium atomic percentage different from the first germanium atomic percentage.

3. The integrated circuit device of claim 2, wherein the lower portion comprises silicon germanium, and the upper portion comprises silicon and is free from germanium.

4. The integrated circuit device of claim 2, wherein the upper portion comprises silicon germanium, and the lower portion comprises silicon and is free from germanium.

5. The integrated circuit device of claim 2, wherein the first germanium atomic percentage is higher than about 60 percent.

6. The integrated circuit device of claim 1 further comprising isolation regions on opposite sides of, and contacting edges of the semiconductor region, wherein top surfaces of the isolation regions are lower than the middle portion.

7. The integrated circuit device of claim 6, wherein an entirety of the lower portion has a substantially straight sidewall, and a top end of the substantially straight sidewall is substantially coplanar with the top surfaces of the isolation regions.

8. The integrated circuit device of claim 7, wherein a portion of the isolation regions has a top tip joining the substantially straight sidewall, and the top tip is substantially coplanar with the top end of the substantially straight sidewall.

9. The integrated circuit device of claim 1, wherein a width of the narrowest part is smaller than a width of a widest portion of the upper portion of the semiconductor region by a difference in a range between about 2 nm and about 14 nm.

10. An integrated circuit device comprising:

isolation regions extending into a semiconductor substrate;

a semiconductor region between opposite portions of the isolation regions, wherein the semiconductor region comprises;

a lower portion with opposite sidewalls contacting the opposite portions of the isolation regions, wherein the lower portion has a first germanium atomic percentage;

an upper portion overlying the lower portion, wherein the upper portion has a second germanium atomic percentage different from the first germanium atomic percentage, and wherein the upper portion and a top part of the lower portion form a semiconductor fin higher than top surfaces of the isolation regions; and

a necking portion as a part of one of the upper portion and the lower portion, with the necking portion having a width smaller than a first width of a first portion of semiconductor region and a second width of a second portion of semiconductor region, wherein the first portion and the second portion are overlying and underlying, respectively, the necking portion, and the necking portion is overlying an interface between the lower portion and the upper portion;

a gate dielectric on a top surface and sidewalls of the semiconductor fin; and

a gate electrode over the gate dielectric.

11. The integrated circuit device of claim 10, wherein a width of the necking portion is smaller than a width of a widest portion of the upper portion of the semiconductor region by a difference in a range between about 2 nm and about 14 nm.

12. The integrated circuit device of claim 10, wherein top surfaces of the isolation regions are lower than the necking portion.

13. The integrated circuit device of claim 10, wherein the upper portion has a first germanium atomic percentage higher than a second germanium atomic percentage of the lower portion.

14. The integrated circuit device of claim 10, wherein an entirety of the necking portion is higher than the top surfaces of the isolation regions.

15. An integrated circuit device comprising:

isolation regions extending into a semiconductor substrate;

a semiconductor strip between opposite portions of the isolation regions;

a semiconductor fin protruding higher than top surfaces of the isolation regions, wherein the semiconductor fin overlaps the semiconductor strip and comprises;

a first portion having a first width; and

a second portion lower than and overlapped by the first portion, wherein the second portion has second widths smaller than the first width, and the second widths gradually changes in the second portion;

a gate dielectric on a top surface and sidewalls of the semiconductor fin; and

a gate electrode over the gate dielectric, wherein the second portion has a narrowest portion, and the narrowest portion is located at a level higher than top surfaces of the isolation regions.

16. The integrated circuit device of claim 15, wherein some parts of the first portion that are increasingly higher than the narrowest portion have increasingly greater widths.

17. The integrated circuit device of claim 15, wherein some parts of the second portion that are increasingly lower than the narrowest portion have increasingly greater widths.

18. The integrated circuit device of claim 15, wherein a width of the narrowest portion of the second portion is smaller than a width of a widest portion of the first portion by a difference in a range between about 2 nm and about 14 nm.

19. The integrated circuit device of claim 15, wherein the first portion has a first germanium atomic percentage higher than a second germanium atomic percentage of the second portion.

20. The integrated circuit device of claim 15, wherein an entirety of the second portion is higher than the top surfaces of the isolation regions.