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FinFETs with necking in the fins

  • US 9,559,206 B2
  • Filed: 09/04/2015
  • Issued: 01/31/2017
  • Est. Priority Date: 12/27/2013
  • Status: Active Grant
First Claim
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1. An integrated circuit device comprising:

  • a semiconductor region comprising;

    an upper portion having a first width;

    a lower portion overlapped by the upper portion and having a second width; and

    a middle portion overlapped by the upper portion and overlapping the lower portion, wherein a narrowest part of the semiconductor region is in the middle portion, and widths of the semiconductor region gradually increase from the narrowest part to the upper portion, and gradually increase from the narrowest part to the lower portion, and the middle portion has a gradually changed germanium atomic percentage;

    a gate dielectric on a top surface and sidewalls of the semiconductor region, wherein the gate dielectric extends below the narrowest part; and

    a gate electrode over the gate dielectric.

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