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Substrate removal process for high light extraction LEDs

  • US 9,559,252 B2
  • Filed: 04/25/2011
  • Issued: 01/31/2017
  • Est. Priority Date: 02/23/2005
  • Status: Active Grant
First Claim
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1. A light emitting diode (LED) device, comprising:

  • a carrier;

    a plurality of semiconductor layers comprising at least an n-type layer and a p-type layer and arranged in a flip-chip orientation on said carrier with said n-type layer being exposed as a topmost of said semiconductor layers; and

    a metal layer structure between said carrier and said p-type layer of said semiconductor layers, said metal layer structure comprising;

    an ohmic contact layer having a first surface and a second surface, in which the first surface of the ohmic contact layer is coupled to said p-type layer of said plurality of semiconductor layers, wherein the ohmic contact layer is transparent,a mirror layer having a first surface and a second surface in which the entire first surface of the mirror layer is coupled to the second surface of the ohmic contact layer, anda barrier layer, coupled to said p-type layer, said ohmic contact layer, and said mirror layer, wherein said barrier layer is coupled closer to said carrier than said p-type layer, said ohmic contact layer, and said mirror layer, in which said barrier layer covers and surrounds, in conjunction with said p-type layer, said ohmic contact layer and said mirror layer;

    wherein said metal layer structure provides light reflection.

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