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Flip-chip LED, method for manufacturing the same and flip-chip package of the same

  • US 9,559,265 B2
  • Filed: 03/20/2015
  • Issued: 01/31/2017
  • Est. Priority Date: 03/21/2014
  • Status: Active Grant
First Claim
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1. A flip-chip LED comprising:

  • a sapphire substrate;

    an N-type ohmic contact layer formed and disposed on the substrate;

    a P-type ohmic contact layer formed and arranged at the N-type ohmic contact layer;

    a light emitting layer formed at an interface between the N-type ohmic contact layer and the P-type ohmic contact layer;

    a transparent conductive metal oxide layer formed and set on the P-type ohmic contact layer;

    two exposed electrodes with different polarities including a negative electrode and a positive electrode; and

    a multi-layer reflective layer covered over an outermost layer thereof;

    wherein the multi-layer reflective layer is manufactured by Physical Vapor Deposition (PVD) with a mask at one time to form each layer of the multi-layer reflective layer in turn on an outer surface of the flip-chip LED except the outer surface disposed with the exposed electrodes;

    wherein the mask is used to form a pattern of the multi-layer reflective layer so that a photoresist layer is disposed on surface of each of the two exposed electrodes with different polarities;

    then a pumping and venting process is used only once to form each layer of the multi-layer reflective layer in turn, andwherein the multi-layer reflective layer is formed by a non-conductive silicon dioxide (SiO2) film, a conductive aluminum film and a non-conductive silicon dioxide (SiO2) film;

    the conductive aluminum film is formed between the two non-conductive silicon dioxide (SiO2) films.

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