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Semiconductor device, power control device and electronic system

  • US 9,559,687 B2
  • Filed: 08/21/2015
  • Issued: 01/31/2017
  • Est. Priority Date: 08/25/2014
  • Status: Active Grant
First Claim
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1. A semiconductor device configured with a single semiconductor chip comprising:

  • a termination region with a ring-like shape;

    a first region provided outside the termination region in which a circuit is formed to operate with a first power supply voltage with a reference voltage as the reference; and

    a second region provided inside the termination region in which a circuit is formed to operate with a second power supply voltage with a floating voltage as the reference is formed,wherein the semiconductor device includes;

    a high side driver formed in the second region to drive a high side transistor provided outside the semiconductor device;

    a level shift circuit for converting a signal with the reference voltage as the reference into a signal with the floating voltage as the reference, and outputs to the second region;

    a first transistor formed in the termination region at a position between a first power supply terminal combined with the first power supply voltage, and a second power supply terminal combined with the second power supply voltage;

    a second transistor formed in the termination region at a position between the second power supply terminal and a sense node, and driven by the first power supply voltage; and

    a comparator circuit formed in the first region to drive the first transistor to be ON when the voltage of the sense node is lower than the first power supply voltage, while driving the first transistor to be OFF when the voltage of the sense node is higher than the first power supply voltage,wherein the first transistor charges a capacitor provided outside the semiconductor device at a position between the second power supply terminal and the terminal combined with the floating voltage,wherein the second transistor is a depression type transistor.

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