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Magnetoresistance effect element and magnetic memory

  • US 9,564,152 B2
  • Filed: 03/25/2014
  • Issued: 02/07/2017
  • Est. Priority Date: 06/04/2010
  • Status: Active Grant
First Claim
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1. A magnetoresistive element comprising:

  • a first non-magnetic layer containing oxygen;

    a ferromagnetic layer having a bcc structure and containing Fe and B, disposed over the first non-magnetic layer, with an interfacial perpendicular magnetic anisotropy at an interface therebetween that results in a magnetization direction of the ferromagnetic layer oriented perpendicularly to the film plane so that the magnetoresistive element has a magnetoresistance ratio (MR) equal to or greater than 70%; and

    a second non-magnetic layer disposed over the ferromagnetic layer, the second non-magnetic layer containing a material with a spin-orbit interaction smaller than that of Pt.

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