Stress trim and modified ISPP procedures for PCM
First Claim
1. A memory circuit, comprising:
- a plurality of blocks of memory cells;
a controller including logic to execute program sequences for selected blocks in the plurality of blocks, the program sequences including patterns of program/verify cycles to induce changes in resistance of memory cells to target values representing data;
logic to assign different patterns of program/verify cycles to different blocks in the plurality of blocks, wherein program/verify cycles in the patterns of program/verify cycles in program sequences verify whether memory cells have resistances matching a verify level resistance; and
logic to apply a stress sequence to a selected block in the selected blocks to induce a change in program current levels required to cause resistance changes in memory cells in the selected block, the stress sequence being different than the program sequences.
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Accused Products
Abstract
A memory circuit is described that includes an array of memory cells including a plurality of blocks. The circuit includes a controller including logic to execute program sequences for selected blocks in the plurality of blocks. The program sequences include patterns of program/verify cycles. The circuit includes logic to assign different patterns of program/verify cycles to different blocks in the plurality of blocks. The circuit includes logic to change a particular pattern assigned to a particular block in the plurality of blocks. The circuit includes logic to maintain statistics for blocks in the plurality of blocks, about performance of cells in the blocks in response to the patterns of program/verify cycles assigned to the blocks. The controller includes logic to apply a stress sequence to one of the selected blocks, the stress sequence including stress pulses applied to memory cells in the one of the selected blocks.
6 Citations
31 Claims
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1. A memory circuit, comprising:
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a plurality of blocks of memory cells; a controller including logic to execute program sequences for selected blocks in the plurality of blocks, the program sequences including patterns of program/verify cycles to induce changes in resistance of memory cells to target values representing data; logic to assign different patterns of program/verify cycles to different blocks in the plurality of blocks, wherein program/verify cycles in the patterns of program/verify cycles in program sequences verify whether memory cells have resistances matching a verify level resistance; and logic to apply a stress sequence to a selected block in the selected blocks to induce a change in program current levels required to cause resistance changes in memory cells in the selected block, the stress sequence being different than the program sequences. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A memory circuit, comprising:
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a plurality of blocks of programmable resistance memory cells; a controller including logic to execute program sequences for selected blocks in the plurality of blocks, the program sequences to induce changes in resistance of memory cells in the blocks to target values representing data, the program sequences including patterns of program/verify cycles; and
logic to apply a stress sequence to induce a change in program current levels required to cause resistance changes in memory cells in one of the selected blocks, the stress sequence being different than the program sequences and including stress pulses applied to memory cells in the one of the selected blocks. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16)
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17. A method for operating a memory circuit comprising a plurality of blocks of memory cells, comprising:
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executing program sequences for blocks in the plurality of blocks, the program sequences including patterns of program/verify cycles to induce changes in resistance of memory cells to target values representing data; assigning different patterns of program/verify cycles to different blocks in the plurality of blocks, wherein program/verify cycles in the patterns of program/verify cycles in program sequences verify whether memory cells have resistances matching a target resistance; and applying a stress sequence to a selected block in the plurality of blocks to induce a change in program current levels required to cause resistance changes in memory cells in the selected block, the stress sequence being different than the program sequences. - View Dependent Claims (18, 19, 20, 21, 22)
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23. A method for operating a memory circuit comprising a plurality of blocks of memory cells, comprising:
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executing program sequences for selected blocks in the plurality of blocks, the program sequences including patterns of program/verify cycles; maintaining statistics for blocks in the plurality of blocks, about whether cells in the blocks pass verify in particular program/verify cycles in the patterns of program/verify cycles assigned to the blocks; and applying a stress sequence to induce a change in program current levels required to cause resistance changes in memory cells in one of the selected blocks, the stress sequence being different than the program sequences and including stress pulses applied to memory cells in the one of the selected blocks. - View Dependent Claims (24, 25, 26, 27, 28, 29, 30, 31)
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Specification