Non-volatile memory device having vertical structure and method of operating the same
First Claim
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1. A non-volatile memory device comprising:
- a substrate;
a plurality of semiconductor poles formed on the substrate to extend vertically with respect to the substrate;
a NAND string having a plurality of memory cells stacked on the substrate along a sidewall of one of the plurality of semiconductor poles, the plurality of memory cells arranged in series, and at least one pair of first selection transistors at a first end of the NAND string adjacent to the plurality of memory cells;
a plurality of word lines coupled to the plurality of memory cells of the NAND string; and
a first selection line commonly coupled to the at least one pair of first selection transistors of the NAND string,wherein the plurality of memory cells comprise control gate electrodes on the sidewall of the one of the semiconductor poles, and the at least one pair of first selection transistors comprises first gate electrodes on the sidewall of the one of the semiconductor poles,wherein a gate length of each of the control gate electrodes and a gate length of each of the first gate electrodes are substantially equal.
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Abstract
A non-volatile memory device having a vertical structure includes a NAND string having a vertical structure. The NAND string includes a plurality of memory cells, and at least one pair of first selection transistors arranged to be adjacent to a first end of the plurality of memory cells. A plurality of word lines are coupled to the plurality of memory cells of the NAND string. A first selection line is commonly connected to the at least one pair of first selection transistors of the NAND string.
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Citations
19 Claims
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1. A non-volatile memory device comprising:
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a substrate; a plurality of semiconductor poles formed on the substrate to extend vertically with respect to the substrate; a NAND string having a plurality of memory cells stacked on the substrate along a sidewall of one of the plurality of semiconductor poles, the plurality of memory cells arranged in series, and at least one pair of first selection transistors at a first end of the NAND string adjacent to the plurality of memory cells; a plurality of word lines coupled to the plurality of memory cells of the NAND string; and a first selection line commonly coupled to the at least one pair of first selection transistors of the NAND string, wherein the plurality of memory cells comprise control gate electrodes on the sidewall of the one of the semiconductor poles, and the at least one pair of first selection transistors comprises first gate electrodes on the sidewall of the one of the semiconductor poles, wherein a gate length of each of the control gate electrodes and a gate length of each of the first gate electrodes are substantially equal. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A non-volatile memory device comprising:
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a substrate; a plurality of semiconductor poles formed on the substrate to extend vertically with respect to the substrate; a NAND string having a plurality of memory cells stacked on the substrate along a sidewall of one of the plurality of semiconductor poles, the NAND string comprising a plurality of control gate electrodes arranged along the sidewall of the one of the plurality of semiconductor poles and at least one set of at least two selection gate electrodes arranged along the sidewall of the one of the semiconductor poles at at least one of two ends of the NAND string adjacent to the plurality of control gate electrodes, wherein the at least one set of at least two selection gate electrodes comprises a first selection gate electrode and a second selection gate electrode; a selection line; and at least two contact plugs, the at least two contact plugs having a first contact plug connected between the selection line and the first selection gate electrode and a second contact plug connected between the selection line and the second selection gate electrode, wherein a gate length of each of the plurality of control gate electrodes and a gate length of each of the at least two selection gate electrodes are substantially equal. - View Dependent Claims (10, 11, 12, 13)
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14. A non-volatile memory device comprising:
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a substrate; a plurality of semiconductor poles formed on the substrate to extend vertically with respect to the substrate; a NAND string having a plurality of memory cells stacked on the substrate along a sidewall of one of the plurality of semiconductor poles, the NAND string comprising a plurality of control gate electrodes arranged along the sidewall of the one of the plurality of semiconductor poles and at least one set of at least two selection gate electrodes arranged along the sidewall of the one of the semiconductor poles over the plurality of control gate electrodes relative to the substrate; at least two contact plugs extending vertically with respect to the substrate; and at least two selection lines farther than the NAND string with respect to the substrate, wherein each of the at least two selection lines is connected to each of the at least two selection gate electrodes via each of the at least two contact plugs, respectively, wherein the at least two contact plugs have different heights, and wherein a gate length of each of the plurality of control gate electrodes and a gate length of each of the at least two selection gate electrodes are substantially equal. - View Dependent Claims (15, 16, 17, 18, 19)
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Specification