Method of manufacturing semiconductor device and method of maintaining deposition apparatus

• US 9,564,316 B2
• Filed: 12/22/2014
• Issued: 02/07/2017
• Est. Priority Date: 04/25/2014
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Solari, William, Lee, Dong Yul, Han, Sang Heon, Kim, Seung Hyun, Kim, Jang Mi, Shim, Hyun Wook, Yoon, Suk Ho
• Primary Examiner(s): Maldonado, Julio J
• Assistant Examiner(s): RAHMAN, MOIN M
• Application Number:
  US14/578,940
• Publication Number:
  US 20150311062A1
• Time in Patent Office: 778 Days
• Field of Search: 438/778, 438/46, 438/592, 438/31, 438/709, 438/711, 438/694, 438/767, 438/710, 438/718, 257/615, 257/12, 257/77, 257/103, 257/751, 257/94, 257/79
• US Class Current: 1/1
• CPC Class Codes: C23C 16/34 Nitrides C23C16/303 takes precedence
• CPC Class Codes: C23C 16/4404 Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
• CPC Class Codes: H01L 21/02107 Forming insulating materials on a substrate
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02433 Crystal orientation
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02496 Layer structure
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02576 N-type
• CPC Class Codes: H01L 21/02579 P-type
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 33/007 comprising nitride compounds

Abstract

A method of manufacturing a semiconductor device, includes forming an aluminum compound film on a surface of a process chamber by supplying an aluminum (Al) source to the process chamber, the surface contacting the aluminum source in the process chamber; disposing a wafer on a susceptor provided in the process chamber after forming the aluminum compound film; and forming a thin film for the semiconductor device on the wafer.

Claims

1. A method of manufacturing a semiconductor device, comprising:

cutting supply of a source gas for a deposition process to an interior of a process chamber;

unloading a first wafer from the process chamber;

forming an aluminum compound film on a surface of the process chamber contacting the source gas, after the unloading of the first wafer;

loading a second wafer in the process chamber, after forming the aluminum compound film; and

resuming the supply of the source gas and depositing a thin film for a semiconductor device on the second wafer.

2. The method as claimed in claim 1, wherein before the cutting of the supply of the source gas, a run of the deposition process for the semiconductor device is performed in plural.

3. The method as claimed in claim 1, wherein at least a portion of the aluminum compound film contains a compound combined with oxygen.

4. The method as claimed in claim 1, wherein the aluminum compound film contains a nitride satisfying Al_xIn_yGa_1-x-yN where 0<

x≦

1, 0≦

y≦

1, and 0<

x+y≦

1.

5. The method as claimed in claim 4, wherein the aluminum compound film is aluminum nitride (AlN).

6. The method as claimed in claim 5, wherein forming the aluminum compound film is performed in a temperature range from about 1000°

C. to about 1200°

C.

7. The method as claimed in claim 6, wherein forming the aluminum compound film includes supplying the aluminum source to an interior of the process chamber under conditions of a flow rate of about 10 μ

mol/min to about 1000 μ

mol/min and a chamber pressure of about 60 Torr to about 500 Torr.

8. The method as claimed in claim 6, wherein the aluminum compound film is an aluminum-containing nitride film, and forming the aluminum compound film includes supplying a nitrogen source together with the aluminum source, to the process chamber, to react with each other.

9. The method as claimed in claim 8, wherein the nitrogen source includes NH₃ and the nitrogen source is supplied as a gas mixed with at least one of N₂ and H₂.

10. The method as claimed in claim 8, wherein the aluminum-containing nitride film has a thickness of 1 μ

m or more.

11. The method as claimed in claim 1, wherein depositing the thin film for the semiconductor device includes growing a semiconductor laminate for a nitride semiconductor device.

12. The method as claimed in claim 11, wherein the semiconductor laminate includes a nitride semiconductor material doped with a p-type dopant.

13. The method as claimed in claim 12, wherein the semiconductor device is a nitride semiconductor light emitting device.

14. The method as claimed in claim 12, wherein the aluminum source is supplied through a passage through which the p-type dopant is supplied.

15. The method as claimed in claim 1, wherein the surface contacting the aluminum source includes an internal wall of the process chamber and a surface provided as a passage for the aluminum source.

16. The method as claimed in claim 1, wherein the process chamber includes a shower head-type source spraying structure, and the surface contacting the aluminum source includes a surface provided as a passage of the source spraying structure.