×

Method of manufacturing semiconductor device and method of maintaining deposition apparatus

  • US 9,564,316 B2
  • Filed: 12/22/2014
  • Issued: 02/07/2017
  • Est. Priority Date: 04/25/2014
  • Status: Active Grant
First Claim
Patent Images

1. A method of manufacturing a semiconductor device, comprising:

  • cutting supply of a source gas for a deposition process to an interior of a process chamber;

    unloading a first wafer from the process chamber;

    forming an aluminum compound film on a surface of the process chamber contacting the source gas, after the unloading of the first wafer;

    loading a second wafer in the process chamber, after forming the aluminum compound film; and

    resuming the supply of the source gas and depositing a thin film for a semiconductor device on the second wafer.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×