Semiconductor device including FinFETs having different gate structures and method of manufacturing the semiconductor device
First Claim
1. A semiconductor device comprising:
- a substrate;
a first fin field-effect transistor (FinFET) having a triple-gate structure that is on the substrate; and
a second FinFET having a double-gate structure that is on the substrate,wherein the first FinFET is disposed in a first region of the substrate comprising logic transistors, and the second FinFET is disposed in a second region of the substrate comprising input/output (I/O) transistors.
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Abstract
A semiconductor device includes a substrate having a logic device region including logic devices thereon, and an input/output (I/O) device region including I/O devices thereon adjacent the logic device region. A first fin field-effect transistor (FinFET) on the logic device region includes a first semiconductor fin protruding from the substrate, and a triple-gate structure having a first gate dielectric layer and a first gate electrode thereon. A second FinFET on the I/O device region includes a second semiconductor fin protruding from the substrate, and a double-gate structure having a second gate dielectric layer and a second gate electrode thereon. The first and second gate dielectric layers have different thicknesses. Related devices and fabrication methods are also discussed.
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Citations
28 Claims
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1. A semiconductor device comprising:
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a substrate; a first fin field-effect transistor (FinFET) having a triple-gate structure that is on the substrate; and a second FinFET having a double-gate structure that is on the substrate, wherein the first FinFET is disposed in a first region of the substrate comprising logic transistors, and the second FinFET is disposed in a second region of the substrate comprising input/output (I/O) transistors. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A semiconductor device comprising:
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a substrate; a first fin field-effect transistor (FinFET) having a triple-structure that is in a first region on the substrate; and a second FinFET having a double-gate structure that is in a second region on the substrate, wherein logic transistors are disposed in the first region and input/output (I/O) transistors are disposed in the second region, wherein a height of a first fin of the first FinFET relative to the substrate is greater than or equal to a height of a second fin of the second FinFET relative to the substrate. - View Dependent Claims (15, 16, 17, 18)
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19. A semiconductor device, comprising:
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a substrate comprising a logic device region including logic transistors thereon and an input/output (I/O) device region including I/O transistors thereon adjacent the logic device region; a first fin field-effect transistor (FinFET) on the logic device region, the first FinFET comprising a first semiconductor fin protruding from the substrate and a triple-gate structure comprising a first gate dielectric layer and a first gate electrode thereon; and a second FinFET on the I/O device region, the second FinFET comprising a second semiconductor fin protruding from the substrate and a double-gate structure comprising a second gate dielectric layer and a second gate electrode thereon, wherein the first and second gate dielectric layers have different thicknesses. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28)
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Specification