TFT substrate, method for producing same, organic EL display device, and method for manufacturing organic EL display device

• US 9,564,474 B2
• Filed: 06/19/2013
• Issued: 02/07/2017
• Est. Priority Date: 06/21/2012
• Status: Active Grant

• Current Assignee: JDI Design and Development GK
• Original Assignee: JOLED Inc.
• Inventors: Sasaki, Atsushi, Satoh, Eiichi, Higashi, Hirofumi
• Primary Examiner(s): GEBREMARIAM, SAMUEL A
• Application Number:
  US14/391,843
• Publication Number:
  US 20150076467A1
• Time in Patent Office: 1,329 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/31111 by chemical means
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/31144 using masks
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous
• CPC Class Codes: H10K 50/814 combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/80516 combined with auxiliary electrodes, e.g. ITO layer combined with metal lines

Abstract

A method of manufacturing a thin film transistor (TFT) substrate in which a TFT including an oxide semiconductor layer is formed, the method including: forming an insulating layer to cover the oxide semiconductor layer; and forming an opening in the insulating layer, wherein the insulating layer includes a first film, a second film which is provided above the first film and is an aluminum oxide film, and a third film which is provided above the second film and is a film including silicon, and the forming of an opening includes: forming a resist pattern above the third film; processing the third film by dry etching; and processing the second film by wet etching.

Claims

1. A method of manufacturing a thin film transistor (TFT) substrate in which a TFT including an oxide semiconductor layer is formed, the method comprising:

forming an insulating layer to cover the oxide semiconductor layer; and

forming an opening in the insulating layer,

wherein the insulating layer includes a first film, a second film which is provided above the first film and is an aluminum oxide film, and a third film which is provided above the second film and is a film including silicon,

the forming of the opening includes;

forming a resist pattern above the third film;

processing the third film by dry etching; and

processing the second film by wet etching, and

the opening comprises a through-hole in each of the first film, the second film, and the third film.

2. The method according to claim 1,

wherein an alkaline solution is used in the processing of the second film.

3. The method according to claim 1,

wherein the forming of the opening further includes processing the first film by dry etching.

4. The method according to claim 3,

wherein the second film is used as a mask in the processing of the first film.

5. The method according to claim 1,

wherein the first film is a silicon oxide film, and

the third film includes at least one of a silicon oxide film, a silicon oxynitride film, or a silicon nitride film.

6. A method of manufacturing an organic EL display device, the method comprising

forming, above the TFT substrate manufactured using the method according to claim 1, a light-emitting layer which emits light through recombination of an electron and a hole.

7. A method of manufacturing a TFT substrate, the method comprising:

forming an insulating layer;

forming an opening in the insulating layer; and

continuously forming an electrode in the opening and above the insulating layer,

wherein the forming of the insulating layer includes;

forming a first film;

forming a second film above the first film; and

forming a third film above the second film,

the forming of the opening includes;

forming a resist pattern above the third film;

processing the third film by dry etching;

processing the second film by wet etching; and

processing the first film by dry etching, and

in the processing of the third film, the opening is formed to have a downward tapered shape in a cross section of the third film.

8. The method according to claim 7,

wherein in the processing of the first film, the opening is formed to have a downward tapered shape in a cross section of the first film.

9. The method according to claim 7,

wherein in the processing of the second film, the opening is formed to have a downward tapered shape in a cross section of the second film.

10. The method according to claim 7,

wherein in the processing of the first film, the first film is processed using the resist pattern as a mask.

11. The method according to claim 7,

wherein in the processing of the first film, gradual receding occurs to the resist pattern above the third film over processing time of the dry etching.

12. The method according to claim 7,

wherein in the forming of the third film, as the third film, a first layer and a second layer formed above the first layer are formed, the first layer and the second layer being formed from a same material, and

the second layer has a film density lower than a film density of the first layer.

13. The method according to claim 12,

wherein in the processing of the third film,

the second layer has an etching rate at least twice an etching rate of the first layer.

14. The method according to claim 7,

wherein the first film is a silicon oxide film,

the second film is an aluminum oxide film, and

the third film is a silicon nitride film.

15. A method of manufacturing an organic EL display device, the method comprising

forming, above the TFT substrate manufactured using the method according to claim 7, a light-emitting layer which emits light through recombination of an electron and a hole.