TFT substrate, method for producing same, organic EL display device, and method for manufacturing organic EL display device
First Claim
1. A method of manufacturing a thin film transistor (TFT) substrate in which a TFT including an oxide semiconductor layer is formed, the method comprising:
- forming an insulating layer to cover the oxide semiconductor layer; and
forming an opening in the insulating layer,wherein the insulating layer includes a first film, a second film which is provided above the first film and is an aluminum oxide film, and a third film which is provided above the second film and is a film including silicon,the forming of the opening includes;
forming a resist pattern above the third film;
processing the third film by dry etching; and
processing the second film by wet etching, andthe opening comprises a through-hole in each of the first film, the second film, and the third film.
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Accused Products
Abstract
A method of manufacturing a thin film transistor (TFT) substrate in which a TFT including an oxide semiconductor layer is formed, the method including: forming an insulating layer to cover the oxide semiconductor layer; and forming an opening in the insulating layer, wherein the insulating layer includes a first film, a second film which is provided above the first film and is an aluminum oxide film, and a third film which is provided above the second film and is a film including silicon, and the forming of an opening includes: forming a resist pattern above the third film; processing the third film by dry etching; and processing the second film by wet etching.
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Citations
15 Claims
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1. A method of manufacturing a thin film transistor (TFT) substrate in which a TFT including an oxide semiconductor layer is formed, the method comprising:
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forming an insulating layer to cover the oxide semiconductor layer; and forming an opening in the insulating layer, wherein the insulating layer includes a first film, a second film which is provided above the first film and is an aluminum oxide film, and a third film which is provided above the second film and is a film including silicon, the forming of the opening includes; forming a resist pattern above the third film; processing the third film by dry etching; and processing the second film by wet etching, and the opening comprises a through-hole in each of the first film, the second film, and the third film. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of manufacturing a TFT substrate, the method comprising:
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forming an insulating layer; forming an opening in the insulating layer; and continuously forming an electrode in the opening and above the insulating layer, wherein the forming of the insulating layer includes; forming a first film; forming a second film above the first film; and forming a third film above the second film, the forming of the opening includes; forming a resist pattern above the third film; processing the third film by dry etching; processing the second film by wet etching; and processing the first film by dry etching, and in the processing of the third film, the opening is formed to have a downward tapered shape in a cross section of the third film. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15)
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Specification