Devices having a semiconductor material that is semimetal in bulk and methods of forming the same
First Claim
1. A structure comprising:
- a substrate having an upper surface;
a first source/drain contact region;
a channel structure connected to and over the first source/drain contact region, the channel structure being over the upper surface of the substrate, the channel structure having a sidewall extending above the first source/drain contact region, the channel structure comprising a bismuth-containing semiconductor material;
a gate dielectric along the sidewall of the channel structure;
a gate electrode along the gate dielectric; and
a second source/drain contact region connected to and over the channel structure.
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Abstract
Devices, and methods of forming such devices, having a material that is semimetal when in bulk but is a semiconductor in the devices are described. An example structure includes a substrate, a first source/drain contact region, a channel structure, a gate dielectric, a gate electrode, and a second source/drain contact region. The substrate has an upper surface. The channel structure is connected to and over the first source/drain contact region, and the channel structure is over the upper surface of the substrate. The channel structure has a sidewall that extends above the first source/drain contact region. The channel structure comprises a bismuth-containing semiconductor material. The gate dielectric is along the sidewall of the channel structure. The gate electrode is along the gate dielectric. The second source/drain contact region is connected to and over the channel structure.
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Citations
20 Claims
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1. A structure comprising:
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a substrate having an upper surface; a first source/drain contact region; a channel structure connected to and over the first source/drain contact region, the channel structure being over the upper surface of the substrate, the channel structure having a sidewall extending above the first source/drain contact region, the channel structure comprising a bismuth-containing semiconductor material; a gate dielectric along the sidewall of the channel structure; a gate electrode along the gate dielectric; and a second source/drain contact region connected to and over the channel structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A structure comprising:
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a substrate comprising a horizontal surface, the horizontal surface being an upper surface of the substrate; a first vertical channel transistor over the horizontal surface of the substrate, the first vertical channel transistor comprising; a first source/drain contact region, a first bismuth-containing channel structure connected to and over the first source/drain contact region, the first bismuth-containing channel structure being a semiconductor and comprising an n-type dopant, the first bismuth-containing channel structure extending perpendicular to the horizontal surface, a first gate dielectric around the first bismuth-containing channel structure, a first gate electrode around the first gate dielectric, the first gate dielectric being disposed between the first bismuth-containing channel structure and the first gate electrode, and a second source/drain contact region connected to and over the first bismuth-containing channel structure; and a second vertical channel transistor over the horizontal surface of the substrate, the second vertical channel transistor comprising; a third source/drain contact region, a second bismuth-containing channel structure connected to and over the third source/drain contact region, the second bismuth-containing channel structure being a semiconductor and comprising a p-type dopant, the second bismuth-containing channel structure extending perpendicular to the horizontal surface, a second gate dielectric around the second bismuth-containing channel structure, a second gate electrode around the second gate dielectric, the second gate dielectric being disposed between the second bismuth-containing channel structure and the second gate electrode, and a fourth source/drain contact region connected to and over the second bismuth-containing channel structure. - View Dependent Claims (12, 13, 14, 15, 16)
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17. A structure comprising:
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a substrate having an upper surface; a first source/drain contact region; a first channel structure connected to and over the first source/drain contact region, the first channel structure being over the upper surface of the substrate, the first channel structure having a first sidewall extending above the first source/drain contact region, the first channel structure comprising a first bismuth-containing semiconductor material; a first gate dielectric along the first sidewall of the first channel structure; a first gate electrode along the first gate dielectric; a second source/drain contact region connected to and over the first channel structure; a third source/drain contact region over the second source/drain contact region; a second channel structure connected to and over the third source/drain contact region, the second channel structure having a second sidewall extending above the third source/drain contact region, the second channel structure comprising a second bismuth-containing semiconductor material; a second gate dielectric along the second sidewall of the second channel structure; and a second gate electrode along the second gate dielectric. - View Dependent Claims (18, 19, 20)
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Specification