Structures and formation methods of micro-electro mechanical system device

• US 9,567,206 B2
• Filed: 05/13/2014
• Issued: 02/14/2017
• Est. Priority Date: 11/19/2013
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Chu, Chia-Hua, Cheng, Chun-Wen, Tsai, Shang-Ying, Liang, Chin-Wei
• Primary Examiner(s): Erdem, Fazli
• Application Number:
  US14/276,295
• Publication Number:
  US 20150284240A1
• Time in Patent Office: 1,008 Days
• US Class Current: 1/1
• CPC Class Codes: B81B 7/0041 maintaining a controlled atmosphere with techniques not provided for in B81B7/0038
• CPC Class Codes: B81B 7/02 containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS] B81B7/04 takes precedence
• CPC Class Codes: B81C 1/00238 Joining a substrate with an electronic processing unit and a substrate with a micromechanical structure
• CPC Class Codes: B81C 1/00293 maintaining a controlled atmosphere with processes not provided for in B81C1/00285

Abstract

A micro-electro mechanical system (MEMS) device is provided. The MEMS device includes a cap substrate and a MEMS substrate bonded with the cap substrate. The MEMS substrate includes a first movable element and a second movable element. The MEMS device also includes a first closed chamber between the MEMS substrate and the cap substrate, and the first movable element is in the first closed chamber. The MEMS device further includes an outgassing layer in the first closed chamber. In addition, the MEMS device includes a second closed chamber between the MEMS substrate and the cap substrate, and the second movable element is in the second closed chamber.

Claims

1. A micro-electro mechanical system (MEMS) device, comprising:

a cap substrate;

a MEMS substrate bonded with the cap substrate, wherein the MEMS substrate comprises at least one first movable element and at least one second movable element;

a first closed chamber between the MEMS substrate and the cap substrate, wherein the first movable element is in the first closed chamber;

an outgassing layer in the first closed chamber;

a second closed chamber between the MEMS substrate and the cap substrate, wherein the second movable element is in the second closed chamber; and

a blocking layer surrounding the first closed chamber and the second closed chamber, wherein the blocking layer extends towards the cap substrate and the MEMS substrate and surrounds sidewalls of the first closed chamber and the second closed chamber, and the blocking layer is configured to block gas outside of the first and the second closed chambers from entering the first closed chamber and the second closed chamber.

2. The MEMS device as claimed in claim 1, wherein the outgassing layer is in direct contact with the cap substrate.

3. The MEMS device as claimed in claim 1, wherein the outgassing layer comprises a dielectric material.

4. The MEMS device as claimed in claim 3, wherein the outgassing layer comprises a silicon oxide layer capable of releasing gas.

5. The MEMS device as claimed in claim 1, wherein the cap substrate comprises a recess, and the outgassing layer is on a bottom of the recess.

6. The MEMS device as claimed in claim 1, wherein the outgassing layer is in direct contact with the MEMS substrate.

7. The MEMS device as claimed in claim 1, wherein the cap substrate comprises a complimentary metal-oxide-semiconductor (CMOS) substrate with a dielectric layer, and the MEMS device further comprises a gas-blocking layer separating the second closed chamber from the dielectric layer of the CMOS substrate.

8. The MEMS device as claimed in claim 1, further comprising a bonding element between the MEMS substrate and the cap substrate.

12. The MEMS device as claimed in claim 1, wherein the outgassing layer is formed over the MEMS substrate.

13. The MEMS device as claimed in claim 7, wherein the dielectric layer of the CMOS substrate forms a portion of an interior wall of the first closed chamber.

14. The MEMS device as claimed in claim 7, wherein the gas-blocking layer is deposited over a surface of the dielectric layer, wherein the surface of the dielectric layer is between the second closed chamber and a top surface of the CMOS substrate.

17. The MEMS device as claimed in claim 7, further comprising at least one conductive plug passing through the gas-blocking layer and being electrically connected to at least one device element of the CMOS substrate.

18. The MEMS device as claimed in claim 17, further comprising a conductive line located within the dielectric layer of the cap substrate, wherein the conductive plug is in contact with the conductive line, and is electrically connected to the at least one device element of the CMOS substrate via the conductive line.

9. A micro-electro mechanical system (MEMS) device, comprising:

a cap substrate;

a MEMS substrate bonded with the cap substrate, wherein the MEMS substrate comprises at least one first movable element and at least one second movable element;

a first closed chamber between the MEMS substrate and the cap substrate, wherein the first movable element is in the first closed chamber;

a second closed chamber between the MEMS substrate and the cap substrate, wherein the second movable element is in the second closed chamber;

an outgassing layer in the first closed chamber and on the cap substrate; and

a blocking layer surrounding the first closed chamber and the second closed chamber, wherein the blocking layer extends towards the cap substrate and the MEMS substrate and surrounds sidewalls of the first closed chamber and the second closed chamber, and the blocking layer is configured to block gas outside of the first and the second closed chambers from entering the first closed chamber and the second closed chamber.

10. The MEMS device as claimed in claim 9, wherein the cap substrate comprises a complimentary metal-oxide-semiconductor (CMOS) substrate with a dielectric layer, and the MEMS device further comprises a gas-blocking layer separating the second closed chamber from the dielectric layer of the CMOS substrate.

11. The MEMS device as claimed in claim 9, further comprising a bonding element between the MEMS substrate and the cap substrate.

15. The MEMS device as claimed in claim 10, wherein the dielectric layer of the CMOS substrate forms a portion of an interior wall of the first closed chamber.

16. The MEMS device as claimed in claim 10, wherein the gas-blocking layer is deposited over a surface of the dielectric layer, wherein the surface of the dielectric layer is between the second closed chamber and a top surface of the CMOS substrate.

19. The MEMS device as claimed in claim 10, wherein at least one conductive plug passes through the gas-blocking layer and is electrically connected to at least one device element of the CMOS substrate.

20. The MEMS device as claimed in claim 19, further comprising a conductive line located within the dielectric layer of the cap substrate, wherein the conductive plug is in contact with the conductive line, and is electrically connected to the at least one device element of the CMOS substrate via the conductive line.