Microelectronic method for etching a layer
First Claim
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1. A microelectronic method for etching a layer to be etched, comprising:
- modifying the layer to be etched to a depth extending from a surface of the layer to be etched and down to at least a portion of a thickness of the layer to be etched to form a film, the modifying comprising implanting light ions into the layer to be etched, the implanting being carried out by a plasma comprising light ions, and the light ions being selected from among helium and hydrogen; and
removing the film by a selective etching of the film relative to at least one layer underlying the film,wherein the layer to be etched covers patterns including flanks, and the implanting of the light ions is performed anisotropically along a direction that is substantially parallel to a surface of the flanks.
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Abstract
A microelectronic method for etching a layer to be etched, including: modifying the layer to be etched from a surface of the layer to be etched and over a depth corresponding to at least a portion of thickness of the layer to be etched to form a film, with the modifying including implanting light ions into the layer to be etched; and removing the film includes a selective etching of the film relative to at least one layer underlying the film.
21 Citations
28 Claims
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1. A microelectronic method for etching a layer to be etched, comprising:
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modifying the layer to be etched to a depth extending from a surface of the layer to be etched and down to at least a portion of a thickness of the layer to be etched to form a film, the modifying comprising implanting light ions into the layer to be etched, the implanting being carried out by a plasma comprising light ions, and the light ions being selected from among helium and hydrogen; and removing the film by a selective etching of the film relative to at least one layer underlying the film, wherein the layer to be etched covers patterns including flanks, and the implanting of the light ions is performed anisotropically along a direction that is substantially parallel to a surface of the flanks. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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27. A microelectronic method for etching a layer to be etched, comprising:
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modifying the layer to be etched to a depth extending from a surface of the layer to be etched and down to at least a portion of a thickness of the layer to be etched to form a film, the modifying comprising implanting light ions into the layer to be etched; and removing the film by a selective etching of the film relative to at least one layer underlying the film, wherein the modifying comprises, after the implanting the light ions and prior to the removing the film, oxidizing a part of the layer to be etched from the surface thereof, wherein the layer to be etched covers patterns including flanks, and the implanting of the light ions is performed anisotropically along a direction that is substantially parallel to a surface of the flanks. - View Dependent Claims (28)
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Specification