Method of semiconductor integrated circuit fabrication
First Claim
Patent Images
1. A method comprising:
- forming a conductive layer on a semiconductor substrate;
forming a patterned material layer on the conductive layer;
forming a catalyst layer on the conductive layer;
forming a plurality of carbon nanotubes (CNTs) from the catalyst layer; and
removing the conductive layer by using the CNTs as a mask to form conductive features.
1 Assignment
0 Petitions
Accused Products
Abstract
A method of fabricating a semiconductor integrated circuit (IC) is disclosed. The method includes providing a substrate and depositing a conductive layer on the substrate. A patterned hard mask and a catalyst layer are formed on the conductive layer. The method further includes growing a plurality of carbon nanotubes (CNTs) from the catalyst layer and etching the conductive layer by using the CNTs and the patterned hard mask as an etching mask to form metal features.
27 Citations
20 Claims
-
1. A method comprising:
-
forming a conductive layer on a semiconductor substrate; forming a patterned material layer on the conductive layer; forming a catalyst layer on the conductive layer; forming a plurality of carbon nanotubes (CNTs) from the catalyst layer; and removing the conductive layer by using the CNTs as a mask to form conductive features. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A method comprising:
-
forming a conductive layer on a semiconductor substrate; forming a patterned hard mask layer directly on the conductive layer; forming a patterned photosensitive layer directly on the patterned hard mask layer; forming a catalyst layer directly on the conductive layer; forming a plurality of carbon nanotubes (CNTs) from the catalyst layer; and removing the conductive layer by using the CNTs as a mask to form conductive features. - View Dependent Claims (10, 11, 12, 13, 14)
-
-
15. A method comprising:
-
forming a metal layer on a semiconductor substrate; forming a patterned hard mask layer directly on the metal layer; forming a patterned photosensitive layer directly on the patterned hard mask layer; forming a catalyst layer directly on the metal layer through the patterned photosensitive layer and the patterned hard mask layer; forming a plurality of carbon nanotubes (CNTs) from the catalyst layer; and etching the metal layer by using the CNTs as a mask. - View Dependent Claims (16, 17, 18, 19, 20)
-
Specification