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Method of semiconductor integrated circuit fabrication

  • US 9,570,347 B2
  • Filed: 06/08/2015
  • Issued: 02/14/2017
  • Est. Priority Date: 12/21/2012
  • Status: Active Grant
First Claim
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1. A method comprising:

  • forming a conductive layer on a semiconductor substrate;

    forming a patterned material layer on the conductive layer;

    forming a catalyst layer on the conductive layer;

    forming a plurality of carbon nanotubes (CNTs) from the catalyst layer; and

    removing the conductive layer by using the CNTs as a mask to form conductive features.

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