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Method for forming a semiconductor device having insulating parts or layers formed via anodic oxidation

  • US 9,570,576 B2
  • Filed: 12/10/2013
  • Issued: 02/14/2017
  • Est. Priority Date: 12/10/2013
  • Status: Active Grant
First Claim
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1. A method for forming a semiconductor device, the method comprising:

  • forming an electrical structure at a main surface of a semiconductor substrate;

    carrying out an anodic oxidation of a back side surface region of a back side surface of the semiconductor substrate to form an oxide layer at the back side surface of the semiconductor substrate after forming the electrical structure at the main surface; and

    forming an electrically conductive layer at the back side of the semiconductor substrate, wherein a first part of the electrically conductive layer is directly separated from the back side surface of the semiconductor substrate by the oxide layer formed by the anodic oxidation and a second part of the electrically conductive layer is formed directly on the back side surface of the semiconductor substrate.

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