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Gate stack and contact structure

  • US 9,570,615 B2
  • Filed: 10/28/2015
  • Issued: 02/14/2017
  • Est. Priority Date: 01/03/2014
  • Status: Active Grant
First Claim
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1. A device comprising:

  • a substrate having a source region and a drain region separated along a first direction by a gate region, a thickness of the substrate defining a thickness direction;

    a gate electrode having a first maximum length, along a second direction, the gate electrode being on the gate region, the second direction being perpendicular to both the first direction and the thickness direction;

    an epitaxy layer on the source region and the drain region;

    a first contact layer having a second maximum length along the second direction, the second maximum length being longer than the first maximum length, the first contact layer being at least partially on the epitaxy layer; and

    an oxide layer on a top surface and side surfaces of the first contact layer for at least the first maximum length.

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