Light emitting diodes

• US 9,570,652 B2
• Filed: 12/27/2012
• Issued: 02/14/2017
• Est. Priority Date: 03/30/2012
• Status: Active Grant

• Current Assignee: Hon Hai Precision Industry Co., Ltd., Tsinghua University
• Original Assignee: Hon Hai Precision Industry Co., Ltd., Tsinghua University
• Inventors: Jin, Yuan-Hao, Li, Qun-Qing, Fan, Shou-Shan
• Primary Examiner(s): Mondt, Johannes P
• Application Number:
  US13/728,031
• Publication Number:
  US 20130256708A1
• Time in Patent Office: 1,510 Days
• Field of Search: 257 88- 93, 257/98
• US Class Current: 1/1
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 27/153 in a repetitive configuration, e.g. LED bars
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

An LED is provided. The LED includes at least two light emitting units located on a same plane. Each light emitting unit includes a first semiconductor layer, an active layer and a second semiconductor layer stacked in that order. Each light emitting unit further includes a first electrode and a second electrode electrically connected with the first semiconductor layer and the second semiconductor layer respectively. The active layer of each light emitting unit is spaced from the active layers of other light emitting units. A distance between adjacent active layer ranges from 1 micron to 1 millimeter.

Claims

1. A light emitting diode, comprising:

at least two light emitting units located on a plane, each light emitting unit comprising;

a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode and a second electrode;

the first semiconductor layer, the active layer, and the second semiconductor layer are stacked with each other in order;

the first electrode is electrically connected with the first semiconductor layer; and

the second electrode is electrically connected with the second semiconductor layer, wherein the at least two light emitting units share the same first semiconductor layer and share the same first electrode located on the first semiconductor layer;

wherein all of the active layers are spaced from each other and located on and abutting a planar surface of the first semiconductor layer, a distance between adjacent active layers ranges from about 1 micron to about 1 millimeter, and each of the at least two light emitting units is configured to extract visible light emitted from sidewalls of adjacent light emitting units;

the first semiconductor layer has a second surface opposite to the planar surface, the planar surface comprises a plurality of first regions spaced apart from each other, and each active layer is located on one of the plurality of first regions; and

in each light emitting unit, the first electrode covers an entirety of the second surface of the first semiconductor layer, and a reflector layer covers an entire surface of the first electrode away from the first semiconductor layer.

2. The light emitting diode of claim 1, wherein the plurality of first regions are equidistantly arranged, concentric circularly arranged, or concentric rectangularly arranged.

3. The light emitting diode of claim 1, wherein each active layer covers an entire surface of each first region.

4. The light emitting diode of claim 1, wherein each active layer comprises a layer of GaInN and a layer of GaN stacked with the GaInN layer.

5. The light emitting diode of claim 1, wherein in each light emitting unit, a plurality of linear protruding structures, dotted protruding structures, or a combination of linear protruding structures and dotted protruding structures are distributed on a surface of the second semiconductor layer away from the active layer.

6. The light emitting diode of claim 5, wherein cross sections of the linear protruding structures are triangle, square, rectangular, trapezoidal, arc, or semicircle.

7. The light emitting diode of claim 6, wherein the linear protruding structures are substantially parallel with each other and extend along a surface of the substrate, and each linear protruding structure extends from a first side of the substrate to a second side opposite to the first side, and each linear protruding structure has a length equal to a width of the substrate from the first side to the second side.

8. The light emitting diode of claim 5, wherein shapes of the dotted protruding structures are sphere, ellipsoid, single layer of truncated pyramid, multi-layer of truncated pyramid, single layer of prism, multi-layer of prism, single layer of frustum, or multi-layer of frustum.

9. The light emitting diode of claim 5, wherein a plurality of equidistantly arranged linear protruding structures are distributed on the surface of each second semiconductor layer away from the active layer, and a distance between adjacent ones of the plurality of linear protruding structures ranges from about 100 nm to about 200 nm.

10. The light emitting diode of claim 9, wherein a cross section of the plurality of equidistantly arranged linear protruding structures along their length direction is a semicircle, and a diameter of the semicircle ranges from about 100 nm to about 200 nm.

11. The light emitting diode of claim 1, wherein the at least two light emitting units are equidistantly arranged, concentric circularly arranged, or concentric rectangularly arranged.

12. A light emitting diode, comprising:

two light emitting units located on a plane, each light emitting unit comprising;

a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode and a second electrode;

the first semiconductor layer, the active layer, and the second semiconductor layer are stacked with each other in order;

the first electrode is electrically connected with the first semiconductor layer; and

the second electrode is electrically connected with the second semiconductor layer, wherein the two light emitting units share the same first semiconductor layer and share the same first electrode located on the first semiconductor layer;

wherein the active layers are spaced from each other and located on a planar surface of the first semiconductor layer, a distance between adjacent active layers ranges from about 1 micron to about 1 millimeter, and the two light emitting units are concentric circularly arranged and one light emitting unit of the two light emitting units being encircled by the other of the two light emitting units, or concentric rectangle arranged;

the first semiconductor layer has a second surface opposite to the planar surface, the planar surface comprises a plurality of first regions spaced apart from each other, and each active layer is located on one of the plurality of first regions; and

in each light emitting unit, the first electrode covers an entirety of the second surface of the first semiconductor layer, and a reflector layer covers an entire surface of the first electrode away from the first semiconductor layer.