Semiconductor light emitting device and semiconductor light emitting apparatus having the same

• US 9,570,660 B2
• Filed: 07/15/2015
• Issued: 02/14/2017
• Est. Priority Date: 11/25/2014
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Ha, Jong Hoon, Kim, Gi Bum, Sim, Jae In, Song, Sang Yeob, Choi, Seung Woo
• Primary Examiner(s): Wilson, Allan R
• Application Number:
  US14/799,675
• Publication Number:
  US 20160149086A1
• Time in Patent Office: 580 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/16245 the item being metallic
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

Provided is a semiconductor light emitting device. The semiconductor light emitting device may include: a light emitting structure comprising a first conductivity-type semiconductor layer having an upper surface divided into first and second regions, an active layer and a second conductivity-type semiconductor layer sequentially disposed on the second region of the first conductivity-type semiconductor layer; a first contact electrode disposed on the first region of the first conductivity-type semiconductor layer; a second contact electrode disposed on the second conductivity-type semiconductor layer; a first electrode pad electrically connected to the first contact electrode and having at least a portion disposed on the second contact electrode; a second electrode pad electrically connected to the second contact electrode; and a multilayer reflective structure interposed between the first electrode pad and the second contact electrode and comprising a plurality of dielectric layers which have different refractive indices and are alternately stacked.

Claims

1. A semiconductor light emitting device comprising:

a light emitting structure comprising a first conductivity-type semiconductor layer having an upper surface divided into first and second regions, an active layer and a second conductivity-type semiconductor layer sequentially disposed on the second region of the first conductivity-type semiconductor layer;

a first contact electrode disposed on the first region of the first conductivity-type semiconductor layer;

a second contact electrode disposed on the second conductivity-type semiconductor layer;

a first electrode pad electrically connected to the first contact electrode and having at least a portion disposed on the second contact electrode;

a second electrode pad electrically connected to the second contact electrode; and

a multilayer reflective structure interposed between the first electrode pad and the second contact electrode, directly contacting the first electrode pad to insulate the first electrode pad from the second contact electrode, and comprising a plurality of dielectric layers which have different refractive indices and are alternately stacked.

2. The semiconductor light emitting device of claim 1, wherein the multilayer reflective structure forms a distributed Bragg reflector in which a first dielectric layer having a first refractive index and a second dielectric layer having a second refractive index are alternately stacked.

3. The semiconductor light emitting device of claim 1, wherein the multilayer reflective structure is disposed on the light emitting structure to cover the light emitting structure overall and to redirect light traveling in an opposite direction of a substrate of the semiconductor light emitting device to a direction of the substrate.

4. The semiconductor light emitting device of claim 1, further comprising an insulating layer disposed on the light emitting structure such that at least portions of the first and second contact electrodes are exposed.

5. The semiconductor light emitting device of claim 4, wherein the insulating layer forms a distributed Bragg reflector in which a plurality of dielectric layers having different refractive indices are alternately stacked.

6. The semiconductor light emitting device of claim 4, wherein the insulating layer comprises the same material as a material of the multilayer reflective structure.

7. The semiconductor light emitting device of claim 4, wherein the insulating layer has a substantially same thickness as a thickness of one dielectric layer of the multilayer reflective structure.

8. The semiconductor light emitting device of claim 4, wherein the multilayer reflective structure is disposed on the insulating layer and comprises a first opening exposing a region of the first contact electrode and a second opening exposing a region of the second contact electrode, and the first and second electrode pads are connected to the first and second contact electrodes through the first and second openings, respectively.

9. The semiconductor light emitting device of claim 8, wherein the multilayer reflective structure comprises a plurality of first and second openings, and the first and second electrode pads are connected to the first and second contact electrodes through the plurality of the first and second openings, respectively.

10. The semiconductor light emitting device of claim 4, wherein the insulating layer is disposed on the multilayer reflective structure which comprises a plurality of openings disposed on the first and second contact electrodes, respectively.

11. The semiconductor light emitting device of claim 1, wherein a portion of the multilayer reflective structure is disposed to be in contact with a surface of the light emitting structure.

12. The semiconductor light emitting device of claim 1, further comprising a passivation layer which is disposed on the electrode pads and comprises a plurality of bonding regions partially exposing the first and second electrode pads.