Method of encapsulating an optoelectronic device and light-emitting diode chip
First Claim
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1. A method of encapsulating an optoelectronic device comprising:
- providing a surface intended to be encapsulated, said surface containing platinum;
generating reactive oxygen groups and/or reactive hydroxyl groups on said surface containing platinum, wherein the reactive oxygen groups and/or the reactive hydroxyl groups on said surface containing platinum are generated by one of treatment with oxygen containing plasma or treatment with ozone;
depositing a passivation layer by atomic layer deposition on said surface containing platinum; and
depositing a further dielectric layer on the passivation layer.
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Abstract
A method of encapsulating an optoelectronic device includes providing a surface intended to be encapsulated, the surface containing platinum, generating reactive oxygen groups and/or reactive hydroxyl groups on the surface, and depositing a passivation layer by atomic layer deposition on the surface.
12 Citations
13 Claims
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1. A method of encapsulating an optoelectronic device comprising:
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providing a surface intended to be encapsulated, said surface containing platinum; generating reactive oxygen groups and/or reactive hydroxyl groups on said surface containing platinum, wherein the reactive oxygen groups and/or the reactive hydroxyl groups on said surface containing platinum are generated by one of treatment with oxygen containing plasma or treatment with ozone; depositing a passivation layer by atomic layer deposition on said surface containing platinum; and depositing a further dielectric layer on the passivation layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of encapsulating an optoelectronic device comprising:
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providing a surface intended to be encapsulated, wherein said surface is partly formed by platinum, another part of the surface is formed by gallium nitride, gallium phosphide or gallium arsenide, and a further part of the surface is formed by silicon oxide, generating reactive oxygen groups and/or reactive hydroxyl groups on said surface; and depositing a passivation layer by atomic layer deposition on said surface, wherein the reactive oxygen groups and/or the reactive hydroxyl groups on said surface are generated by treatment with oxygen containing plasma or treatment with ozone.
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13. A method of encapsulating an optoelectronic device comprising:
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providing a thin film semiconductor chip with an epitaxially grown multilayer stack arranged on a carrier, wherein a reflective layer is arranged between the multilayer stack and the carrier, said reflective layer having a surface comprising platinum and the reflective layer projects laterally from the multilayer stack, generating reactive oxygen groups and/or reactive hydroxyl groups on side faces of the multilayer stack, on the top face of the multilayer stack and on parts of the surface of the reflective layer projecting laterally from the multilayer stack, and depositing a passivation layer with help of atomic layer deposition on the side faces of the multilayer stack, on the front face of the multilayer stack and on the parts of the surface of the reflective layer projecting laterally from the multilayer stack.
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Specification