Magnetoresistive structures, magnetic random-access memory devices including the same and methods of manufacturing the magnetoresistive structure
First Claim
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1. A magnetoresistive structure, comprising:
- a first magnetic layer having a fixed magnetization direction, the first magnetic layer including an upper surface, a lower surface and side surfaces perpendicular to the upper surface and the lower surface;
a second magnetic layer operatively connected to the first magnetic layer, the second magnetic layer having a changeable magnetization direction; and
a magnetoresistance (MR) enhancing layer and an intermediate layer both between the first magnetic layer and the second magnetic layer, wherein a first portion of the MR enhancing layer surrounds the upper surface and the side surfaces of the first magnetic layer, an inner surface of the intermediate layer has a profile conformal to a profile of the first portion of the MR enhancing layer, and the second magnetic layer is operatively connected to the intermediate layer such that a total surface area of the second magnetic layer is larger than a total surface area of the first magnetic layer.
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Abstract
Magnetoresistive structures, magnetic random-access memory devices including the same, and methods of manufacturing the magnetoresistive structure, include a first magnetic layer having a magnetization direction that is fixed, a second magnetic layer corresponding to the first magnetic layer, wherein a magnetization direction of the second magnetic layer is changeable, and a magnetoresistance (MR) enhancing layer and an intermediate layer both between the first magnetic layer and the second magnetic layer.
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Citations
17 Claims
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1. A magnetoresistive structure, comprising:
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a first magnetic layer having a fixed magnetization direction, the first magnetic layer including an upper surface, a lower surface and side surfaces perpendicular to the upper surface and the lower surface; a second magnetic layer operatively connected to the first magnetic layer, the second magnetic layer having a changeable magnetization direction; and a magnetoresistance (MR) enhancing layer and an intermediate layer both between the first magnetic layer and the second magnetic layer, wherein a first portion of the MR enhancing layer surrounds the upper surface and the side surfaces of the first magnetic layer, an inner surface of the intermediate layer has a profile conformal to a profile of the first portion of the MR enhancing layer, and the second magnetic layer is operatively connected to the intermediate layer such that a total surface area of the second magnetic layer is larger than a total surface area of the first magnetic layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A magnetic random-access memory device, comprising:
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a switching structure; and a magnetoresistive structure connected to the switching structure, the magnetoresistive structure including, a first magnetic layer having a fixed magnetization direction, the first magnetic layer including an upper surface, a lower surface and side surfaces perpendicular to the upper surface and the lower surface, a second magnetic layer operatively connected to the first magnetic layer, the second magnetic layer having a changeable magnetization direction, and a magnetoresistance (MR) enhancing layer and an intermediate layer both between the first magnetic layer and the second magnetic layer, wherein a first portion of the MR enhancing layer surrounds the upper surface and the side surfaces of the first magnetic layer, an inner surface of the intermediate layer has a profile conformal to a profile of the first portion of the MR enhancing layer, and the second magnetic layer is operatively connected to the intermediate layer such that a total surface area of the second magnetic layer is larger than a total surface area of the first magnetic layer. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A magnetic random-access memory device, comprising:
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a first magnetic layer having a fixed magnetization direction, the first magnetic layer including an upper surface, a lower surface and side surfaces perpendicular to the upper surface and the lower surface; a second magnetic layer operatively connected to the first magnetic layer and the second magnetic layer extends over the first magnetic layer, the second magnetic layer having a variable magnetization direction; and a resistive structure separating the first magnetic layer and the second magnetic layer, the resistive structure including at least one magnetoresistive layer and at least one intermediate layer, wherein a first portion of the at least one magnetoresistive layer surrounds the upper surface and the side surfaces of the first magnetic layer, an inner surface of the at least one intermediate layer has a profile conformal to a profile of the first portion of the at least one magnetoresistive layer, and the second magnetic layer is operatively connected to the intermediate layer such that a total surface area of the second magnetic layer is larger than a total surface area of the first magnetic layer. - View Dependent Claims (14, 15, 16, 17)
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Specification