All printed and transparent CNT TFT

• US 9,570,694 B2
• Filed: 01/27/2014
• Issued: 02/14/2017
• Est. Priority Date: 01/28/2013
• Status: Active Grant

• Current Assignee: Aneeve, LLC
• Original Assignee: Aneeve, LLC
• Inventors: Sajed, Farzam
• Primary Examiner(s): Seven, Evren
• Application Number:
  US14/763,791
• Publication Number:
  US 20150364707A1
• Time in Patent Office: 1,114 Days
• Field of Search: None
• US Class Current: 1/1
• CPC Class Codes: H10K 10/464 Lateral top-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/468 characterised by the gate dielectrics
• CPC Class Codes: H10K 10/84 Ohmic electrodes, e.g. source or drain electrodes
• CPC Class Codes: H10K 71/135 using ink-jet printing
• CPC Class Codes: H10K 71/611 using printing deposition, e.g. ink jet printing
• CPC Class Codes: H10K 85/221 Carbon nanotubes

Abstract

A transparent thin film transistor is fabricated on a substrate by first depositing a concentrated aqueous metallic carbon nanotube solution using an inkjet printer on the substrate to form source and drain electrodes with a channel therebetween. The deposited metallic carbon nanotubes are then cleaned in mild acid; and the source and drain electrodes are cured by heating. An aqueous semiconducting carbon nanotube solution is then deposited in the channel on the substrate using an inkjet printer on the substrate to form a channel semiconductor. The channel semiconductor is then cleaned using a mild acid. A dielectric gate of ionic gel dielectric is then deposited on the cleaned channel semiconductor using an inkjet printer; and the ionic gel dielectric is cured by heating.

Claims

1. A method of fabricating a transparent thin film transistor, comprising:

printing a concentrated aqueous metallic carbon nanotube solution on a substrate to form separated metallic carbon nanotube source and drain electrode layers on the substrate, the metallic carbon nanotube source and drain electrode layers defining a channel space there between;

cleaning the metallic carbon nanotube source and drain electrode layers by soaking in a mild acid to form cleaned metallic carbon nanotube source and drain electrode layers;

curing the cleaned metallic carbon nanotube source and drain electrode layers by heating to form cured metallic carbon nanotube source and drain electrode layers; and

then

printing an aqueous semiconducting carbon nanotube solution in the channel space on the substrate to form a carbon nanotube channel semiconductor layer;

cleaning the carbon nanotube channel semiconductor layer by soaking in another mild acid to form a cleaned carbon nanotube channel semiconductor layer;

printing an ionic gel dielectric on the cleaned carbon nanotube channel semiconductor layer at room temperature to form an ionic gel dielectric layer thereon; and

then

curing the ionic gel dielectric layer by heating.

2. The method of claim 1, wherein the printing of the concentrated aqueous metallic carbon nanotube solution is by inkjet printing, printing of the aqueous semiconducting carbon nanotube solution by inkjet printing and the printing of the of the ionic gel dielectric is by inkjet printing.

3. The method of claim 1, wherein the curing of the cleaned metallic carbon nanotube source and drain electrode layers is at 250°

C.

4. The method of claim 1, wherein the curing of the ionic gel dielectric layer is at 105°

C.

5. The method of claim 1, further including increasing the carbon nanotube density of the metallic carbon nanotube source and drain electrode layers by a second printing of the concentrated aqueous metallic carbon nanotube solution on the cured metallic carbon nanotube source and drain electrode layers.

6. The method of claim 1, the aqueous semiconducting carbon nanotube solution being at a ratio of 1 mg in 100 mL.

7. The method of claim 1, wherein, the metallic carbon nanotube source and drain electrode layers are air dried before the soaking in mild acid.