Pulsed valve manifold for atomic layer deposition

• US 9,574,268 B1
• Filed: 10/28/2011
• Issued: 02/21/2017
• Est. Priority Date: 10/28/2011
• Status: Active Grant

• Current Assignee: ASM IP Holding B.V. (ASM International NV)
• Original Assignee: ASM America Incorporated (ASM International NV)
• Inventors: Dunn, Todd, White, Carl, Halpin, Mike, Shero, Eric, Terhorst, Herbert, Winkler, Jerry
• Primary Examiner(s): Zervigon, Rudy
• Application Number:
  US13/284,738
• Time in Patent Office: 1,943 Days
• Field of Search: 118/715, 156/345.1
• US Class Current: 1/1
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23C 16/45512 Premixing before introduction in the reaction chamber
• CPC Class Codes: C23C 16/45544 characterized by the apparatus
• CPC Class Codes: C23C 16/45561 Gas plumbing upstream of the reaction chamber
• CPC Class Codes: C23C 16/45563 Gas nozzles
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/4557 Heated nozzles
• CPC Class Codes: C23C 16/45574 Nozzles for more than one gas
• CPC Class Codes: C23C 16/45576 Coaxial inlets for each gas
• CPC Class Codes: C23C 16/45589 Movable means, e.g. fans
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/28556 by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence

Abstract

A vapor deposition device includes a reactor including a reaction chamber and an injector for injecting vapor into the reaction chamber. The device also includes a manifold for delivering vapor to the injector. The manifold includes a manifold body having an internal bore, a first distribution channel disposed within the body in a plane intersecting the longitudinal axis of the bore, and a plurality of supply channels disposed within the body and in flow communication with the first distribution channel and with the bore. Each of the first supply channels is disposed at an acute angle with respect to the longitudinal axis of the bore, and each of the supply channels connects with the bore at a different angular position about the longitudinal axis. The distribution channel (and thus, the supply channels) can be connected with a common reactant source. Related deposition methods are also described.

Claims

1. A vapor deposition device comprising:

a reactor including a reaction chamber, a substrate support configured to support a substrate, and an injector configured to inject vapor into the reaction chamber, the injector comprising a showerhead mechanism disposed over the substrate support, the showerhead mechanism comprising a showerhead plate and defining a showerhead plenum, the showerhead plate including a plurality of non-annular openings to inject the vapor into the reaction chamber, each opening of the plurality of openings defining a channel disposed along a first direction; and

a manifold configured to deliver vapor to the injector, the manifold being disposed upstream of the injector, the manifold comprising;

a manifold body having a hollow bore disposed within the body, the bore having a longitudinal axis along which gas flows, the longitudinal axis generally parallel with the first direction, the manifold body comprising a first block and a second block disposed adjacent the first block,

a first distribution channel disposed within the body and extending in a plane intersecting the longitudinal axis, wherein the first distribution channel is defined by a groove formed in at least one of a lower surface of the first block and an upper surface of the second block, the groove disposed at least partially about the bore to direct gas circumferentially relative to the bore,

a plurality of first supply channels disposed within the body and in flow communication with the first distribution channel and with the bore, each of the first supply channels being disposed at an acute angle with respect to the longitudinal axis of the bore, each of the first supply channels connecting with the bore at a different angular position about the longitudinal axis, and

an inert gas inlet configured to fluidly connect to an inert gas source, wherein a portion of the bore extends upstream and downstream of the first distribution channel and the first supply channels along the longitudinal axis, the inert gas inlet disposed upstream of the first distribution channel and the first supply channels, the inert gas inlet directed along the longitudinal axis of the bore to supply inert gas through the bore along the longitudinal axis.

2. The vapor deposition device of claim 1, further comprising the inert gas source, the inert gas source coupled to the inert gas inlet upstream of where the first supply channels connect with the bore.

3. The vapor deposition device of claim 1, wherein the first distribution channel extends in a plane normal to the longitudinal axis.

4. The vapor deposition device of claim 1, wherein each of the first supply channels connects with the first distribution channel at a different angular position about the longitudinal axis.

5. The vapor deposition device of claim 1, wherein the first distribution channel has a curved shape.

6. The vapor deposition device of claim 5, wherein the first distribution channel follows a circular curvature.

7. The vapor deposition device of claim 1, wherein the first distribution channel extends through an arc of at least 180°

.

8. The vapor deposition device of claim 1, wherein the first distribution channel extends through an arc of about 240°

.

9. The vapor deposition device of claim 1, wherein the different angular positions are disposed symmetrically about the longitudinal axis.

10. The vapor deposition device of claim 1, wherein the manifold comprises three first channels, and wherein the different angular positions are spaced apart by approximately 120°

.

11. The vapor deposition device of claim 1, wherein the different angular positions are disposed asymmetrically about the longitudinal axis.

12. The vapor deposition device of claim 1, wherein each of the first channels extends radially from the bore, as viewed in a transverse cross-section.

13. The vapor deposition device of claim 1, wherein each of the first supply channels extends tangentially or semitangentially from the bore, as viewed in a transverse cross-section.

14. The vapor deposition device of claim 1, wherein an inlet to the first distribution channel has a diameter approximately equal to a diameter of the first distribution channel.

15. The vapor deposition device of claim 14, wherein each of the first supply channels has a diameter between 25% and 100% of a diameter of the first distribution channel.

16. The vapor deposition device of claim 1, wherein the first distribution channel is connected to a first reactant source.

17. The vapor deposition device of claim 1, wherein the bore has a length-to-diameter (L/D) ratio of greater than 5, where the length is measured from where the first supply channels connect with the bore to an outlet of the bore, and the diameter is an average diameter along the length.

18. The vapor deposition device of claim 17, wherein the manifold body further comprises:

a second distribution channel disposed within the body and extending in a plane intersecting the longitudinal axis; and

a plurality of second supply channels disposed within the body and in flow communication with the second distribution channel and with the bore, each of the second supply channels being disposed at an acute angle with respect to the longitudinal axis of the bore, each of the second supply channels connecting with the bore at a different angular position about the longitudinal axis.

19. The vapor deposition device of claim 18, wherein the first reactant source is configured to hold a gas, wherein the second distribution channel is connected to a second reactant source, the second reactant source including a precursor vaporizer wherein the second supply channels connect with the bore downstream of where the first supply channels connect with the bore.

20. The vapor deposition device of claim 19, wherein the manifold body further comprises:

a third distribution channel disposed within the body and extending in a plane intersecting the longitudinal axis; and

a plurality of third supply channels disposed within the body and in flow communication with the third distribution channel and with the bore, each of the third supply channels being disposed at an acute angle with respect to the longitudinal axis of the bore, each of the third supply channels connecting with the bore at a different angular position about the longitudinal axis.

21. The vapor deposition device of claim 20, wherein the third distribution channel extends in substantially the same plane as the second distribution channel.

22. The vapor deposition device of claim 20, the third supply channels connect with the bore at approximately the same longitudinal location as the second supply channels.

23. The vapor deposition device of claim 20, wherein the third distribution channel is connected to a third reactant source, the third reactant source including another precursor vaporizer.

24. The vapor deposition device of claim 18, further comprising a first reactant gas valve mounted on the manifold, the first reactant gas valve configured to control a supply of the second reactant to the second distribution channel.

25. The vapor deposition device of claim 24, further comprising a first inert gas valve mounted on the manifold, the first inert gas valve configured to control a supply of an inert gas to the first reactant gas valve.

26. The vapor deposition device of claim 1, wherein the groove comprises a floor having a curved surface, as viewed from a side cross-section.

27. The vapor deposition device of claim 1, further comprising a second distribution channel disposed within the body, the first distribution channel comprising an annulus surrounding the second distribution channel.

28. The vapor deposition device of claim 27, further comprising a plurality of second supply channels disposed within the body and in flow communication with the second distribution channel and with the bore, each of the second supply channels being disposed at an acute angle with respect to the longitudinal axis of the bore.

37. The vapor deposition device of claim 1, wherein the showerhead plate is at least as large as the substrate support.

29. A vapor deposition device comprising:

a reactor including a reaction chamber, a substrate support configured to support a substrate, and an injector configured to inject vapor into the reaction chamber, the injector comprising a showerhead mechanism disposed over the substrate support, the showerhead mechanism comprising a showerhead plate and defining a showerhead plenum, the showerhead plate including a plurality of non-annular openings to inject the vapor into the reaction chamber, each opening of the plurality of openings defining a channel disposed along a first direction; and

a manifold configured to deliver vapor to the injector, the manifold being disposed upstream of the injector, the manifold comprising;

a manifold body having a hollow bore disposed within the body, the bore having a longitudinal axis along which gas flows, the longitudinal axis generally parallel with the first direction, the manifold body comprising a first block and a second block disposed adjacent the first block,

a first distribution channel disposed within the body and extending in a plane intersecting the longitudinal axis, wherein the first distribution channel is defined by a groove formed in at least one of a lower surface of the first block and an upper surface of the second block, the groove disposed at least partially about the bore to direct gas circumferentially relative to the bore, and

a plurality of first supply channels disposed within the body and in flow communication with the first distribution channel and with the bore, each of the first supply channels being disposed at an acute angle with respect to the longitudinal axis of the bore, each of the first supply channels connecting with the bore at a different angular position about the longitudinal axis.

30. The vapor deposition device of claim 29, further comprising a third block disposed adjacent the second block and a second distribution channel disposed within the body and extending in a second plane intersecting the longitudinal axis, wherein the second distribution channel is defined by a lower surface of the second block and an upper surface of the third block.

31. The vapor deposition device of claim 29, wherein the first distribution channel extends through an arc of at least 180°

.

38. The vapor deposition device of claim 29, wherein the showerhead plate is at least as large as the substrate support.

32. A vapor deposition device comprising:

a reactor including a reaction chamber, a substrate support configured to support a substrate, and an injector configured to inject vapor into the reaction chamber, the injector comprising a showerhead mechanism disposed over the substrate support, the showerhead mechanism comprising a showerhead plate and defining a showerhead plenum, the showerhead plate including a plurality of non-annular openings to inject the vapor into the reaction chamber, each opening of the plurality of openings defining a channel disposed along a first direction; and

a manifold configured to deliver vapor to the injector, the manifold being disposed upstream of the injector, the manifold comprising;

a manifold body having a hollow bore disposed within the body, the bore having a longitudinal axis along which gas flows, the longitudinal axis generally parallel with the first direction, the manifold body comprising a first block and a second block disposed adjacent the first block,

a first distribution channel disposed within the body and extending in a plane intersecting the longitudinal axis, wherein the first distribution channel is defined by a groove formed in at least one of a lower surface of the first block and an upper surface of the second block, the groove disposed at least partially about the bore to direct gas circumferentially relative to the bore,

a plurality of first supply channels disposed within the body and in flow communication with the first distribution channel and with the bore, each of the first supply channels being disposed at an acute angle with respect to the longitudinal axis of the bore,

a second distribution channel disposed within the body and extending in the same plane as the first distribution channel, the first distribution channel surrounding the second distribution channel,

a plurality of second supply channels disposed within the body and in flow communication with the second distribution channel and with the bore, each of the second supply channels being disposed at an acute angle with respect to the longitudinal axis of the bore.

33. The vapor deposition device of claim 32, wherein the respective acute angle formed between the second supply channels and the longitudinal axis is larger than the respective acute angle formed between the first supply channels and the longitudinal axis.

34. The vapor deposition device of claim 32, wherein the first distribution channel extends through an arc of at least 180°

.

35. The vapor deposition device of claim 32, further comprising an inert gas source coupled to an inlet of the bore upstream of where the first supply channels connect with the bore.

36. The vapor deposition device of claim 32, wherein the first distribution channel extends in a plane normal to the longitudinal axis.

39. The vapor deposition device of claim 32, wherein the showerhead plate is at least as large as the substrate support.

40. The vapor deposition device of claim 32, wherein the first distribution channel comprises a first annular channel disposed at least partially about the bore, and wherein the second distribution channel comprises a second annular channel disposed at least partially about the bore.