Deposition of boron and carbon containing materials
First Claim
1. A method of doping a semiconductor substrate, comprising:
- depositing a boron and carbon film over the semiconductor substrate in a reaction space by exposing the substrate to a vapor phase boron precursor at a process temperature of 300°
C. to 450°
C., wherein the boron precursor comprises boron, carbon and hydrogen; and
annealing the boron and carbon film at a temperature of 800°
C. to 1200°
C.
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Accused Products
Abstract
Methods of depositing boron and carbon containing films are provided. In some embodiments, methods of depositing B, C films with desirable properties, such as conformality and etch rate, are provided. One or more boron and/or carbon containing precursors can be decomposed on a substrate at a temperature of less than about 400° C. One or more of the boron and carbon containing films can have a thickness of less than about 30 angstroms. Methods of doping a semiconductor substrate are provided. Doping a semiconductor substrate can include depositing a boron and carbon film over the semiconductor substrate by exposing the substrate to a vapor phase boron precursor at a process temperature of about 300° C. to about 450° C., where the boron precursor includes boron, carbon and hydrogen, and annealing the boron and carbon film at a temperature of about 800° C. to about 1200° C.
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Citations
26 Claims
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1. A method of doping a semiconductor substrate, comprising:
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depositing a boron and carbon film over the semiconductor substrate in a reaction space by exposing the substrate to a vapor phase boron precursor at a process temperature of 300°
C. to 450°
C., wherein the boron precursor comprises boron, carbon and hydrogen; andannealing the boron and carbon film at a temperature of 800°
C. to 1200°
C. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of doping a substrate, comprising:
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depositing a boron and carbon film over a substrate in a reaction space using a chemical vapor deposition process, wherein depositing the boron and carbon film comprises; exposing the substrate to a vapor phase boron precursor in an inert gas atmosphere at a process temperature greater than 300°
C.; andpurging the reaction space subsequent to exposing the three-dimensional structure on the substrate to the vapor phase boron precursor; and annealing the boron and carbon film in a nitrogen atmosphere, wherein no cap layer is formed over the boron and carbon film prior to annealing. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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17. A method of depositing a boron and carbon containing film on a substrate in a reaction space, comprising:
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a cyclic process comprising contacting the substrate with a vapor phase boron precursor at a process temperature of 250°
C. up to 400°
C. in at least two deposition cycles separated by a purge step to form the boron and carbon containing film on the substrate,wherein the vapor phase boron precursor decomposes on the substrate, and wherein the film has a thickness of less than 30 angstroms. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26)
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Specification