Method of producing epitaxial silicon wafer, epitaxial silicon wafer, and method of producing solid-state image sensing device
First Claim
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1. A method of producing an epitaxial silicon wafer, comprising:
- a first step of irradiating a silicon wafer free of dislocation clusters and COPs with cluster ions including a constituent element contributing to gettering of heavy metal to form a modifying layer formed from the constituent element of the cluster ions in a surface portion of the silicon wafer,a second step of forming an epitaxial layer on the modifying layer of the silicon wafer,wherein, in the first step, the silicon wafer is irradiated with the cluster ions such that the full width half maximum of a concentration profile of the constituent element in the depth direction of the modifying later after the second step is 100 nm or less.
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Abstract
Provided is an epitaxial silicon wafer free of epitaxial defects caused by dislocation clusters and COPs with reduced metal contamination achieved by higher gettering capability and a method of producing the epitaxial wafer. A method of producing an epitaxial silicon wafer includes a first step of irradiating a silicon wafer free of dislocation clusters and COPs with cluster ions to form a modifying layer formed from a constituent element of the cluster ions in a surface portion of the silicon wafer; and a second step of forming an epitaxial layer on the modifying layer of the silicon wafer.
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8 Claims
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1. A method of producing an epitaxial silicon wafer, comprising:
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a first step of irradiating a silicon wafer free of dislocation clusters and COPs with cluster ions including a constituent element contributing to gettering of heavy metal to form a modifying layer formed from the constituent element of the cluster ions in a surface portion of the silicon wafer, a second step of forming an epitaxial layer on the modifying layer of the silicon wafer, wherein, in the first step, the silicon wafer is irradiated with the cluster ions such that the full width half maximum of a concentration profile of the constituent element in the depth direction of the modifying later after the second step is 100 nm or less. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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