Semiconductor device and method of manufacturing same

• US 9,576,946 B2
• Filed: 03/29/2016
• Issued: 02/21/2017
• Est. Priority Date: 03/11/2014
• Status: Active Grant

• Current Assignee: Realtek Semiconductor Corp.
• Original Assignee: Realtek Semiconductor Corp.
• Inventors: Yen, Hsiao-Tsung, Jean, Yuh-Sheng, Yeh, Ta-Hsun
• Primary Examiner(s): VU, HUNG K
• Application Number:
  US15/084,027
• Publication Number:
  US 20160211255A1
• Time in Patent Office: 329 Days
• Field of Search: 438/381, 438/382, 438/386, 438/387, 438/389, 438/390, 438/392
• US Class Current: 1/1
• CPC Class Codes: H01L 21/02107 Forming insulating materials on a substrate
• CPC Class Codes: H01L 21/0273 characterised by the treatment of photoresist layers
• CPC Class Codes: H01L 21/283 Deposition of conductive or insulating materials for electrodes conducting electric current
• CPC Class Codes: H01L 21/306 Chemical or electrical treatment, e.g. electrolytic etching to form insulating layers H01L21/31
• CPC Class Codes: H01L 21/30604 Chemical etching
• CPC Class Codes: H01L 21/311 Etching the insulating layers by chemical or physical means H01L21/31058 takes precedence
• CPC Class Codes: H01L 27/0255 using diodes as protective elements
• CPC Class Codes: H01L 27/0288 using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 28/20 Resistors
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: H01L 29/66181 Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
• CPC Class Codes: H01L 29/945 Trench capacitors

Abstract

A method of manufacturing a semiconductor device, comprising: providing a substrate; forming a first trough structure, which comprises at least a first sidewall, on the substrate; forming a first doping layer on the first sidewall; covering the first doping layer and a part of a surface of the substrate by a photoresist; forming a second trough structure, which comprises at least a second sidewall, on a part of the substrate which is not covered by the photoresist; removing the photoresist; forming an insulation layer on the substrate, the first trough structure, and the second trough structure; forming a conductive layer on the substrate, the first trough structure, and the second trough structure; and removing parts of the insulation layer and the conductive layer outside the first trough structure and the second trough structure to expose a surface of the first doping layer at the opening of the first trough structure.

Claims

1. A method of manufacturing a semiconductor device, comprising:

providing a substrate;

forming a first trough structure on the substrate, the first trough structure comprising at least a first sidewall;

forming a first doping layer on the first sidewall;

covering the first doping layer and a part of a surface of the substrate by a photoresist;

forming a second trough structure on a part of the substrate which is not covered by the photoresist, the second trough structure comprising at least a second sidewall;

removing the photoresist;

forming an insulation layer on the substrate, the first trough structure, and the second trough structure, wherein a first part of the insulation layer is in the first trough structure and covers the first doping layer, and a second part of the insulation layer is in the second trough structure;

forming a conductive layer on the substrate, the first trough structure, and the second trough structure, wherein a first part of the conductive layer is in the first trough structure and covers the first insulation layer, and a second part of the conductive layer is in the second trough structure and covers the second insulation layer; and

removing parts of the insulation layer and the conductive layer that are outside the first trough structure and the second trough structure to expose a surface of the first doping layer at the opening of the first trough structure.

2. The method of claim 1, further comprising:

forming a second doping layer on the second sidewall before removing the photoresist;

wherein, the second part of the insulation layer covers the second doping layer and a surface of the second doping layer at the opening of the second trough structure is exposed after the parts of the insulation layer and the conductive layer that are outside the first trough structure and the second trough structure are removed.

3. The method of claim 2, further comprising:

forming contacts on the first doping layer and the second doping layer.

4. The method of claim 1, further comprising:

pre-doping in an area of the substrate by a predetermined depth before the first trough structure is formed so that a part of a surface of the substrate between the first trough structure and the second trough structure comprises a part of the pre-doped area.

5. The method of claim 4, further comprising:

forming contacts on the first doping layer and the part of the surface of the substrate between the first trough structure and the second trough structure.

6. The method of claim 4, wherein a doping type of the pre-doped area is the same as a doping type of the substrate but different from a doping type of the first doping layer.

7. The method of claim 1, wherein a doping type of the substrate is different from a doping type of the first doping layer.

8. The method of claim 7, further comprising:

forming contacts on the first doping layer and a part of a surface of the substrate between the first trough structure and the second trough structure.

9. The method of claim 1, wherein bottom surfaces of the first trough structure and the second trough structure are adjacent to the substrate.

10. The method of claim 1, further comprising:

forming contacts on the first part of the conductive layer and/or the second part of the conductive layer.