FinFET devices having gate dielectric structures with different thicknesses on same semiconductor structure
First Claim
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1. A method, comprising steps of:
- forming a first finFET device on a substrate structure wherein the first finFET device comprises a first gate dielectric structure having a first thickness; and
forming a second finFET device on the substrate structure wherein the second finFET device comprises a second gate dielectric structure having a second thickness;
wherein the first thickness and the second thickness are different, and the first finFET device forming step and the second finFET device forming step are part of the same fabrication process; and
wherein forming the first and second finFET devices further comprises;
forming respective fin structures on the substrate structure;
forming respective pairs of spacers proximate to the respective fin structures;
depositing dummy oxide layers on the respective fin structures;
depositing dummy gate polysilicon layers over the dummy oxide layers; and
depositing inner-layer dielectric layers adjacent to the respective pairs of spacers.
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Abstract
FinFET devices are formed on the same semiconductor structure wherein at least one finFET device has a gate dielectric structure that is different in thickness relative to a gate dielectric structure of at least one other finFET device. The finFET devices are formed as part of the same fabrication process.
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Citations
20 Claims
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1. A method, comprising steps of:
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forming a first finFET device on a substrate structure wherein the first finFET device comprises a first gate dielectric structure having a first thickness; and forming a second finFET device on the substrate structure wherein the second finFET device comprises a second gate dielectric structure having a second thickness; wherein the first thickness and the second thickness are different, and the first finFET device forming step and the second finFET device forming step are part of the same fabrication process; and wherein forming the first and second finFET devices further comprises; forming respective fin structures on the substrate structure; forming respective pairs of spacers proximate to the respective fin structures; depositing dummy oxide layers on the respective fin structures; depositing dummy gate polysilicon layers over the dummy oxide layers; and depositing inner-layer dielectric layers adjacent to the respective pairs of spacers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method comprising:
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forming a first finFET device on a substrate structure wherein the first finFET device comprises a first gate dielectric structure having a first thickness; and forming a second finFET device on the substrate structure wherein the second finFET device comprises a second gate dielectric structure having a second thickness; wherein the first thickness and the second thickness are different, and the first finFET device forming step and the second finFET device forming step are part of the same fabrication process; and wherein forming the first and second finFET devices further comprises; forming respective fin structures on the substrate structure; forming respective pairs of spacers proximate to the respective fin structures; depositing first dielectric layers on the respective fin structures; depositing dummy gate polysilicon layers over the respective first dielectric layers; depositing inner-layer dielectric layers adjacent to the respective pairs of spacers; removing the dummy gate polysilicon layers; and depositing a titanium nitride layer over the respective first dielectric layers. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification