Integration of semiconductor epilayers on non-native substrates
First Claim
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1. An article, comprising:
- a support substrate having bonding surface; and
heterostructure epitaxial layers that include one or more electronic devices, the heterostructure epitaxial layers having a surface and an epitaxial growth direction towards the surface, the heterostructure epitaxial layers bonded to the support substrate at the surface of the heterostructure epitaxial layers by ion exchange between the surface of the heterostructure epitaxial layers and the bonding surface of the support substrate, wherein the support substrate and the heterostructure epitaxial layers are configured to powderize together in response to a trigger.
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Abstract
An article includes a support substrate bonded to heterostructure epitaxial layers that include one or more electronic devices. The support substrate has a bonding surface and the heterostructure epitaxial layers have a surface with the epitaxial growth direction of the heterostructure epitaxial layers towards the surface. The surface of the heterostructure epitaxial layers is bonded at the bonding surface of the support substrate by ion exchange between the surface of the heterostructure epitaxial layers and the bonding surface of the support substrate.
40 Citations
21 Claims
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1. An article, comprising:
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a support substrate having bonding surface; and heterostructure epitaxial layers that include one or more electronic devices, the heterostructure epitaxial layers having a surface and an epitaxial growth direction towards the surface, the heterostructure epitaxial layers bonded to the support substrate at the surface of the heterostructure epitaxial layers by ion exchange between the surface of the heterostructure epitaxial layers and the bonding surface of the support substrate, wherein the support substrate and the heterostructure epitaxial layers are configured to powderize together in response to a trigger. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method, comprising:
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epitaxially growing heterostructure epitaxial layers on a growth substrate along a growth direction towards a surface of the heterostructure epitaxial layers; placing the surface of the heterostructure epitaxial layers on or near an ion rich bonding surface of a support substrate; bonding the heterostructure epitaxial layers to the support substrate by ion exchange between the bonding surface of the support substrate and the surface of the heterostructure epitaxial layers; applying at least one of heat and voltage during the bonding; and removing the growth substrate, wherein the support substrate and the heterostructure epitaxial layers are configured to powderize together in response to a trigger. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21)
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Specification