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Integration of semiconductor epilayers on non-native substrates

  • US 9,577,047 B2
  • Filed: 07/10/2015
  • Issued: 02/21/2017
  • Est. Priority Date: 07/10/2015
  • Status: Active Grant
First Claim
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1. An article, comprising:

  • a support substrate having bonding surface; and

    heterostructure epitaxial layers that include one or more electronic devices, the heterostructure epitaxial layers having a surface and an epitaxial growth direction towards the surface, the heterostructure epitaxial layers bonded to the support substrate at the surface of the heterostructure epitaxial layers by ion exchange between the surface of the heterostructure epitaxial layers and the bonding surface of the support substrate, wherein the support substrate and the heterostructure epitaxial layers are configured to powderize together in response to a trigger.

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