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Methods of manufacturing semiconductor devices

  • US 9,577,076 B2
  • Filed: 02/03/2015
  • Issued: 02/21/2017
  • Est. Priority Date: 05/07/2014
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device, the method comprising:

  • performing a plasma annealing and supplying a threshold voltage control gas onto a portion of a substrate to form a fixed charge region including a fixed charge at a surface of the substrate; and

    forming a MOS transistor on the substrate including the fixed charge region for controlling a threshold voltage of the MOS transistor, wherein the threshold voltage control gas has an atomic number smaller than that of an element of the substrate, and wherein the threshold voltage control as is supplied onto source and drain regions of the MOS transistor in the substrate, and wherein the fixed charge region is formed at the source and drain regions, and an edge portion of a channel region of the MOS transistor.

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