Tunnel field effect transistors
First Claim
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1. A semiconductor device comprising:
- a first drain region of a first conductivity type disposed in a first region of a substrate;
a first source region of a second conductivity type disposed in said substrate, said second conductivity type being opposite said first conductivity type;
a first channel region electrically coupled between said first source region and said first drain region, said first source region directly underlying at least a first portion of said first channel region;
a first doped region of the first conductivity type disposed between the first source region and the first drain region, said first doped region contacting the first source region and the first drain region; and
a first gate stack overlying said first channel region, wherein the first source region is separated from the first gate stack by the first channel region and the first doped region is separated from the first gate stack by the first channel region, wherein the first source region and the first drain region are heavily doped, wherein the first channel region is lowly doped having the first conductivity type;
a tunnel junction at the intersection between the first source region and the first portion of the first channel region, wherein, the lowly doped first channel region has a lower dopant concentration than a dopant concentration of the heavily doped first source region so that, at the tunnel junction between the first source region and the first channel region, a net doping concentration varies abruptly from the heavily doped second conductivity type first source region to the lowly doped first conductivity type first channel region; and
a p/n junction at the intersection between the first source region and the first doped region.
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Abstract
Tunnel field effect devices and methods of fabricating tunnel field effect devices are described. In one embodiment, the semiconductor device includes a first drain region of a first conductivity type disposed in a first region of a substrate, a first source region of a second conductivity type disposed in the substrate, the second conductivity type being opposite the first conductivity type, a first channel region electrically coupled between the first source region and the first drain region, the first source region underlying a least a portion of the first channel region, and a first gate stack overlying the first channel region.
40 Citations
38 Claims
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1. A semiconductor device comprising:
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a first drain region of a first conductivity type disposed in a first region of a substrate; a first source region of a second conductivity type disposed in said substrate, said second conductivity type being opposite said first conductivity type; a first channel region electrically coupled between said first source region and said first drain region, said first source region directly underlying at least a first portion of said first channel region; a first doped region of the first conductivity type disposed between the first source region and the first drain region, said first doped region contacting the first source region and the first drain region; and a first gate stack overlying said first channel region, wherein the first source region is separated from the first gate stack by the first channel region and the first doped region is separated from the first gate stack by the first channel region, wherein the first source region and the first drain region are heavily doped, wherein the first channel region is lowly doped having the first conductivity type; a tunnel junction at the intersection between the first source region and the first portion of the first channel region, wherein, the lowly doped first channel region has a lower dopant concentration than a dopant concentration of the heavily doped first source region so that, at the tunnel junction between the first source region and the first channel region, a net doping concentration varies abruptly from the heavily doped second conductivity type first source region to the lowly doped first conductivity type first channel region; and a p/n junction at the intersection between the first source region and the first doped region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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25. A semiconductor device comprising:
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a first drain region of a first conductivity type disposed in a first region of a substrate; a first source region of a second conductivity type disposed in said substrate, said second conductivity type being opposite said first conductivity type; a second source region of the second conductivity type disposed above the first source region; a first channel region electrically coupled between said first source region and said first drain region, said first source region directly underlying at least a first portion of said first channel region; a first doped region of the first conductivity type underlying at least a second portion of said first channel region, said first doped region contacting the first source region and the first drain region; a first gate stack overlying said first channel region, wherein the first source region is separated from the first gate stack by the first channel region and the first doped region is separated from the first gate stack by the first channel region, wherein the first source region and the first drain region are heavily doped, wherein the first channel region is lowly doped having the first conductivity type; a tunnel junction at the intersection between the first source region and the first portion of the first channel region, wherein, the lowly doped first channel region has a lower dopant concentration than a dopant concentration of the heavily doped first source region so that, at the tunnel junction between the first source region and the first channel region, a net doping concentration varies abruptly from the heavily doped second conductivity type first source region to the lowly doped first conductivity type first channel region; and a p/n junction at the intersection between the first source region and the first doped region, wherein, in the substrate, the first channel region contacts only the first source region, the first drain region, the first doped region, and the second source region. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32)
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33. A semiconductor device comprising:
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a first drain region of a first conductivity type disposed in a first region of a substrate; a first source region of a second conductivity type disposed in said substrate, said second conductivity type being opposite said first conductivity type; a second source region of the second conductivity type disposed in said substrate and above the first source region; a channel region electrically coupled between said first source region and said first drain region and between said second source region and said first drain region, said first source region directly underlying at least a first portion of said channel region, wherein the first source region, the first drain region, the second source region are heavily doped, and the channel region is lowly doped having the first conductivity type;
a horizontal tunnel junction is formed between said channel region and said first source region, wherein, at the horizontal tunnel junction between the first source region and the channel region, the lowly doped channel region has a lower dopant concentration than a dopant concentration of the heavily doped first source region so that, a net doping concentration varies abruptly from the heavily doped second conductivity type first source region to the lowly doped first conductivity type channel region;
a vertical tunnel junction is formed between said channel region and said second source region, wherein, at the vertical tunnel junction between the second source region and the channel region, a net doping concentration varies abruptly from the heavily doped second conductivity type second source region to the lowly doped first conductivity type channel region, and wherein the vertical tunnel junction is perpendicular to the horizontal tunnel junction;a doped region of the first conductivity type underlying at least a second portion of said channel region, said doped region contacting the first source region and the first drain region, wherein, in the substrate, the channel region contacts only the first source region, the first drain region, the doped region, and the second source region; and a gate stack overlying said channel region, wherein the first drain region, the first and second source regions, the channel region, the doped region, and the gate stack form a tunnel field effect transistor, wherein the first source region is separated from the gate stack by the channel region and the doped region is separated from the gate stack by the channel region. - View Dependent Claims (34, 35, 36, 37, 38)
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Specification