Semiconductor device

• US 9,577,086 B2
• Filed: 03/27/2014
• Issued: 02/21/2017
• Est. Priority Date: 04/03/2013
• Status: Active Grant

• Current Assignee: Mitsubishi Electric Corporation
• Original Assignee: Mitsubishi Electric Corporation
• Inventors: Hino, Shiro, Miura, Naruhisa, Imaizumi, Masayuki, Ebihara, Kohei
• Primary Examiner(s): Diaz, Jose R
• Application Number:
  US14/779,255
• Publication Number:
  US 20160079411A1
• Time in Patent Office: 1,062 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 29/0615 by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] LDD or drain offset regions H01L29/7833
• CPC Class Codes: H01L 29/0619 with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/0865 Disposition
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/12 characterised by the materials of which they are formed
• CPC Class Codes: H01L 29/1608 Silicon carbide
• CPC Class Codes: H01L 29/36 characterised by the concentration or distribution of impurities in the bulk material within semiconductor regions H01L29/06
• CPC Class Codes: H01L 29/4238 characterised by the surface lay-out
• CPC Class Codes: H01L 29/47 Schottky barrier electrodes H01L29/435 takes precedence
• CPC Class Codes: H01L 29/78 with field effect produced by an insulated gate H01L29/7725, H01L29/775, H01L29/778 take precedence
• CPC Class Codes: H01L 29/7806 the other device being a Schottky barrier diode
• CPC Class Codes: H01L 29/7811 with an edge termination structure guard regions per se H01L29/0619; field plates per se H01L29/402
• CPC Class Codes: H01L 29/7815 with voltage or current sensing structure, e.g. emulator section, overcurrent sensing cell
• CPC Class Codes: H01L 29/872 Schottky diodes

Abstract

A device that increases a value of current flowing through a whole chip until a p-n diode in a unit cell close to a termination operates and reduces a size of the chip and a cost of the chip resulting from the reduced size. The device includes a second well region located to sandwich the entirety of a plurality of first well regions therein in plan view, a third separation region located to penetrate the second well region from a surface layer of the second well region in a depth direction, and a second Schottky electrode provided on the third separation region.

Claims

1. A semiconductor device, comprising:

a drift layer of a first conductivity type located on a semiconductor substrate of the first conductivity type;

a plurality of first well regions of a second conductivity type provided at an interval in a surface layer of said drift layer;

a second well region of the second conductivity type located in the surface layer of said drift layer while sandwiching the entirety of said plurality of first well regions therein in plan view, said second well region having a formation area larger than that of each of said first well regions;

a first separation region of the first conductivity type located to penetrate each of said first well regions from a surface layer of each of said first well regions in a depth direction;

a source region of the first conductivity type located in the surface layer of each of said first well regions while sandwiching said first separation region therein in plan view;

a first Schottky electrode provided on said first separation region;

a first ohmic electrode provided over each of said first well regions while sandwiching said first Schottky electrode therein in plan view;

a second separation region of the first conductivity type being a region for separating said first well regions from each other;

a third separation region of the first conductivity type located to penetrate said second well region from a surface layer of said second well region in the depth direction;

a second Schottky electrode provided on said third separation region;

a gate electrode provided, through a first insulating film, over said first and second well regions except for positions in which said first and second Schottky electrodes and said first ohmic electrode are provided;

a second insulating film located to cover said gate electrode; and

a first source electrode provided to cover said first and second Schottky electrodes, said first ohmic electrode, and said second insulating film.

2. The semiconductor device according to claim 1, further comprising a second ohmic electrode provided on said second well region in a position adjacent to said first well regions, wherein

said gate electrode is provided also except for a position in which said second ohmic electrode is provided, and

said first source electrode is also provided to cover said second ohmic electrode.

3. The semiconductor device according to claim 2, wherein said third separation region is positioned farther from said first well regions than said second ohmic electrode.

4. The semiconductor device according to claim 2, wherein said second ohmic electrode is positioned so as to sandwich said second Schottky electrode therein in plan view.

5. The semiconductor device according to claim 2, wherein said first insulating film located on said second well region has a thickness greater than a thickness of said first insulating film located on said first well regions.

6. The semiconductor device according to claim 2, wherein a contact resistance in said second ohmic electrode is higher than a contact resistance in said first ohmic electrode.

7. The semiconductor device according to claim 2, further comprising a first well contact region of the second conductivity type located, in the surface layer of each of said first well regions, in a position in which said first ohmic electrode is provided.

8. The semiconductor device according to claim 7, further comprising a second well contact region of the second conductivity type located, in the surface layer of said second well region, in a position in which said second ohmic electrode is provided,

wherein an impurity concentration in said second well contact region is lower than an impurity concentration in said first well contact region.

9. The semiconductor device according to claim 1, further comprising a second source electrode that covers said first Schottky electrode located on said first separation region in at least one of said plurality of first well regions and covers said first ohmic electrode located over said first well region so as to sandwich said first Schottky electrode therein, said second source electrode being different from said first source electrode.

10. The semiconductor device according to claim 1, further comprising an auxiliary region of the second conductivity type partially located in said third separation region.

11. The semiconductor device according to claim 1, wherein an impurity concentration of the first conductivity type in said third separation region is higher than an impurity concentration of the first conductivity type in said drift layer.

12. The semiconductor device according to claim 1, wherein said drift layer comprises silicon carbide.

13. The semiconductor device according to claim 2, wherein a distance on the surface of said drift layer between a plan position of said second ohmic electrode and a plan position of said third separation region is shorter than a thickness of said drift layer.

14. The semiconductor device according to claim 1, wherein a dimension of said third separation region in a direction in which said second well region sandwiches said first well regions therein is larger than a dimension of said third separation region in a direction perpendicular to the direction in which said second well region sandwiches said first well regions therein.