Semiconductor light emitting device
First Claim
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1. A semiconductor light emitting device, comprising:
- a conductive supporting member having a top surface and a bottom surface spaced from each other in a vertical direction;
a second electrode layer disposed under the bottom surface of the conductive supporting member, the second electrode layer having a central portion and a peripheral portion;
a protecting layer under the peripheral portion of the second electrode layer;
an ohmic contact layer disposed under a bottom surface of the second electrode layer;
a light emitting structure disposed under a bottom surface of the ohmic contact layer wherein the light emitting structure comprises a first conductive type semiconductor layer disposed under the bottom surface of the ohmic contact layer, a second conductive type semiconductor layer between the first conductive type semiconductor layer and the ohmic contact layer, and an active layer between the first and second conductive type semiconductor layers;
a plurality of grooves disposed in an inner region of the light emitting structure, each groove having a width and an upper surface located between a top surface of the second conductive type semiconductor layer and a bottom surface of the second conductive type semiconductor layer; and
a first electrode disposed under a bottom surface of the light emitting structure,wherein the ohmic contact layer is formed in a pattern corresponding to the grooves,wherein a width and a length of the ohmic contact layer is greater than a width and a length of the grooves,wherein each groove has a total depth from a bottom surface of the first conductive type semiconductor layer to the upper surface of the groove, andwherein the total depth of the groove is shorter than that of the light emitting structure.
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Abstract
Provided is a semiconductor light emitting device.
The semiconductor light emitting device comprises a second electrode layer; a light emitting structure comprising a plurality of compound semiconductor layers under the second electrode layer; at least one dividing groove that divides inner areas of the lower layers of the light emitting structure into a plurality of areas; and a first electrode under the light emitting structure.
10 Citations
18 Claims
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1. A semiconductor light emitting device, comprising:
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a conductive supporting member having a top surface and a bottom surface spaced from each other in a vertical direction; a second electrode layer disposed under the bottom surface of the conductive supporting member, the second electrode layer having a central portion and a peripheral portion; a protecting layer under the peripheral portion of the second electrode layer; an ohmic contact layer disposed under a bottom surface of the second electrode layer; a light emitting structure disposed under a bottom surface of the ohmic contact layer wherein the light emitting structure comprises a first conductive type semiconductor layer disposed under the bottom surface of the ohmic contact layer, a second conductive type semiconductor layer between the first conductive type semiconductor layer and the ohmic contact layer, and an active layer between the first and second conductive type semiconductor layers; a plurality of grooves disposed in an inner region of the light emitting structure, each groove having a width and an upper surface located between a top surface of the second conductive type semiconductor layer and a bottom surface of the second conductive type semiconductor layer; and a first electrode disposed under a bottom surface of the light emitting structure, wherein the ohmic contact layer is formed in a pattern corresponding to the grooves, wherein a width and a length of the ohmic contact layer is greater than a width and a length of the grooves, wherein each groove has a total depth from a bottom surface of the first conductive type semiconductor layer to the upper surface of the groove, and wherein the total depth of the groove is shorter than that of the light emitting structure. - View Dependent Claims (2, 3, 4, 5, 15, 16, 17, 18)
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6. A semiconductor light emitting device, comprising:
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a conductive supporting member having a top surface and a bottom surface spaced from each other in a vertical direction; a second electrode layer comprising a reflective electrode disposed under the bottom surface of the conductive supporting member, the second electrode layer having a central portion and a peripheral portion; a protecting layer under the peripheral portion of the second electrode layer; an ohmic contact layer disposed under a bottom surface of the second electrode layer; a light emitting structure disposed under a bottom surface of the ohmic contact layer, wherein the light emitting structure comprises a first conductive type semiconductor layer disposed under the bottom surface of the ohmic contact layer, a second conductive type semiconductor layer between the first conductive type semiconductor layer and the ohmic contact layer, and an active layer between the first and second conductive type semiconductor layers; a plurality of grooves spaced apart from each other in an inner region of the light emitting structure, each groove having a width and an upper surface located between a top surface of the second conductive type semiconductor layer and a bottom surface of the second conductive type semiconductor layer; and a first electrode under a bottom surface of the light emitting structure, wherein the ohmic contact layer is formed in a pattern corresponding to the grooves, wherein a width and a length of the ohmic contact layer is greater than a width and a length of the grooves, wherein the plurality of grooves each have a total depth from a bottom surface of the first conductive type semiconductor layer to the upper surface of the groove, the plurality of grooves being in the second conductive type semiconductor layer, wherein the total depth of each of the grooves is shorter than that of the light emitting structure, and wherein the conductive supporting member has a width wider than that of the light emitting structure. - View Dependent Claims (7, 8, 9, 10)
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11. A semiconductor light emitting device, comprising:
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a conductive supporting member having a top surface and a bottom surface spaced from each other in a vertical direction; a second electrode layer comprising a reflective electrode disposed under a bottom surface of the conductive supporting member, the second electrode layer having a central portion and a peripheral portion; a protecting layer under the peripheral portion of the second electrode layer; an ohmic contact layer disposed in the central portion of the second electrode layer; a light emitting structure disposed under a bottom surface of the ohmic contact layer, wherein the light emitting structure comprises a first conductive type semiconductor layer disposed under the bottom surface of the ohmic contact layer, a second conductive type semiconductor layer between the first conductive type semiconductor layer and the ohmic contact layer, and an active layer between the first and second conductive type semiconductor layers; and a plurality of grooves spaced from each other in an inner region of the light emitting structure, each groove having a width and an upper surface located between a top surface of the second conductive type semiconductor layer and a bottom surface of the second conductive type semiconductor layer, wherein the ohmic contact layer is formed in a pattern corresponding to the grooves, wherein a width and a length of the ohmic contact layer is greater than a width and a length of the grooves, wherein the plurality of grooves has a total depth from a bottom surface of the first conductive type semiconductor layer to the upper surface of the groove, and wherein the total depth of each of the grooves is shorter than that of the light emitting structure, wherein the conductive supporting member and the second electrode layer have a width wider than that of the light emitting structure, and wherein the first conductive type semiconductor layer includes an n-type dopant and the second conductive type semiconductor layer includes a p-type dopant. - View Dependent Claims (12, 13, 14)
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Specification