Cell phone having a monolithically integrated multi-sensor device on a semiconductor substrate and method therefor

• US 9,580,302 B2
• Filed: 03/12/2014
• Issued: 02/28/2017
• Est. Priority Date: 03/15/2013
• Status: Active Grant

• Current Assignee: Versana Micro Inc.
• Original Assignee: Versana Micro Inc.
• Inventors: Gogoi, Bishnu Prasanna
• Primary Examiner(s): COLEMAN, WILLIAM D
• Application Number:
  US14/207,433
• Publication Number:
  US 20140264658A1
• Time in Patent Office: 1,084 Days
• US Class Current: 1/1
• CPC Class Codes: B81B 2201/0207 Bolometers
• CPC Class Codes: B81B 2201/0214 Biosensors; Chemical sensors
• CPC Class Codes: B81B 2201/0228 Inertial sensors
• CPC Class Codes: B81B 2201/0257 Microphones or microspeakers
• CPC Class Codes: B81B 2201/0264 Pressure sensors
• CPC Class Codes: B81B 2201/0278 Temperature sensors
• CPC Class Codes: B81B 2207/012 the micromechanical device and the control or processing electronics being separate parts in the same package
• CPC Class Codes: B81B 2207/05 Arrays
• CPC Class Codes: B81B 2207/09 Packages
• CPC Class Codes: B81B 7/02 containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS] B81B7/04 takes precedence
• CPC Class Codes: H01L 27/14 including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation radiation-sensitive components structurally associated with one or more electric light sources only H01L31/14; couplings of light guides with optoelectronic elements G02B6/42
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H05K 7/02 Arrangements of circuit components or wiring on supporting structure
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10N 19/00 Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
• CPC Class Codes: H10N 30/302 Sensors
• CPC Class Codes: H10N 30/308 Membrane type
• CPC Class Codes: H10N 59/00 Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00 MRAM devices H10B61/00

Abstract

A cell phone is provided having multiple sensors configured to detect and measure different parameters of interest. The cell phone includes at least one monolithic integrated multi-sensor (MIMS) device. The MIMS device comprises at least two sensors of different types formed on a common semiconductor substrate. For example, the MIMS device can comprise an indirect sensor and a direct sensor. The cell phone couples a first parameter to be measured directly to the direct sensor. Conversely, the cell phone can couple a second parameter to be measured to the indirect sensor indirectly. Other sensors can be added to the cell phone by stacking a sensor to the MIMS device or to another substrate coupled to the MIMS device. This supports integrating multiple sensors such as a microphone, an accelerometer, and a temperature sensor to reduce cost, complexity, simplify assembly, while increasing performance.

Claims

1. A cell phone where the cell phone is configured to couple to a wireless network, where the cell phone comprises:

a first integrated circuit comprising;

a first sensor configured to measure a first parameter;

a second sensor configured to measure a second parameter; and

a third sensor configured to measure a third parameter wherein the first, second, and third parameters are different and wherein the first integrated circuit is coupled to the cell phone.

2. The cell phone of claim 1 a second integrated circuit having at least one sensor wherein the second integrated circuit is coupled to the first integrated circuit via conductive bumps or wirebonds.

3. The cell phone of claim 1 a third integrated circuit having control circuitry wherein the first integrated circuit is coupled to the first integrated circuit via conductive bumps or wirebonds.

4. The cell phone of claim 1 wherein the first sensor is exposed to an external environment and wherein the second sensor is sealed from the external environment.

5. The cell phone of claim 1 wherein the first integrated circuit of the cell phone includes a layer in common to the first and the second sensors, wherein at least a portion of the layer is etched, wherein the layer seals a cavity in the first sensor, wherein the layer seals a cavity in the second sensor, wherein a volume of the cavity of the first sensor is fixed, and wherein a volume of the cavity of the second sensor is configured to vary according to a stimulus.

6. The cell phone of claim 1 wherein the first integrated circuit has a layer in common to the first and the second sensors, wherein at least a portion of the layer is etched, wherein the layer seals a cavity in the first sensor, wherein the layer includes an opening exposing the second sensor the second sensor to an external environment.

7. The cell phone of claim 1 wherein at least two of the first, second, or third sensors of the first integrated circuit are sealed from an external environment.

8. The cell phone of claim 1 wherein the first and the second sensors of the first integrated circuit are sealed from an external environment and wherein the first and the second sensors are sealed having a different pressure.

9. The cell phone of claim 1 wherein at least one sensor of the first integrated circuit is sealed by one or more deposited layers.

10. The cell phone of claim 9 wherein the one or more deposited layers comprise at least one of polycrystalline silicon, epitaxially deposited silicon, amorphous silicon silicon germanium, germanium, silicon nitride, silicon oxynitride, silicon carbide, metal, polyimide, parylene, silicon oxide, PSG (phosphosilicate glass), BSG (borosilicate glass), BPSG (Boron Phosphosilicate Glass), PECVD Oxide, TEOS (tetraethylorthosilicate), plasma assisted oxide, laser assisted CVD oxide, sputtered oxide, diamond, polymer, photoresist, or metals such as aluminum, gold, copper, silver, tungsten, nickel, titanium, chrome, platinum, or iridium.

11. The cell phone of claim 1 wherein a layer is shared in common with two or three of the first, second, and third sensors of the first integrated circuit.

12. The cell phone of claim 1 wherein at least one of the first, second, or third sensors of the first integrated circuit is sealed by depositing a layer using at least one of low pressure chemical vapor deposition, plasma enhanced chemical vapor deposition, atmospheric pressure chemical vapor deposition, sub atmospheric chemical vapor deposition, plasma assisted chemical vapor deposition, laser assisted chemical vapor deposition, physical vapor deposition, atomic layer deposition, metallo organic chemical vapor deposition, or molecular beam epitaxy or wherein the first sensor can be sealed using one of sputtering, evaporating, spin-coating, electro-plating, or spray coating a material on the integrated circuit.

13. The cell phone of claim 1 wherein the first sensor and the second sensor of the first integrated circuit are MEMS sensors.

14. The integrated circuit of claim 1 wherein the first, second, and third sensors respectively comprise an accelerometer, pressure sensor, and a microphone.

15. The integrated circuit of claim 1 wherein the first, second, and third sensors respectively comprise a pressure sensor, a gyroscope, and a microphone.

16. The integrated circuit of claim 1 wherein the first, second, and third sensors respectively comprise an accelerometer, a pressure sensor, and a humidity sensor.

17. The integrated circuit of claim 1 wherein the first, second, and third sensors respectively comprise a pressure sensor, an accelerometer, and an infra-red sensor.

18. The integrated circuit of claim 1 wherein the first, second, and third sensors respectively comprise an accelerometer, a pressure sensor, and a magnetic sensor.

19. The integrated circuit of claim 1 wherein the first, second, and third sensors respectively comprise a pressure sensor, a microphone, and a magnetic sensor.

20. The integrated circuit of claim 1 wherein the first, second, and third sensors respectively comprise an accelerometer, a pressure sensor, and a temperature sensor.

21. The integrated circuit of claim 1 wherein at least one of the first, second, or third sensors is a chemical sensor.

22. The cell phone of claim 1 wherein the cell phone is configured to display or transmit measurement data from the first integrated circuit.

23. The cell phone of claim 1 wherein the cell phone houses the first integrated circuit.

24. The cell phone of claim 1 wherein the first integrated circuit comprises at least four of an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, or biological sensor.

25. The cell phone of claim 1 wherein at least one of the first, second, or third sensors of the first integrated circuit is sealed by two or more layers.

26. The cell phone of claim 1 wherein at least two of the first, second, or third sensors are sealed by two or more sensors.

27. The cell phone of claim 1 wherein the first, second, and third sensors are MEMS sensors.

28. The cell phone of claim 1 wherein the first integrated circuit includes a fourth sensor configured to measure a fourth parameter wherein the first, second, third, and fourth parameters are different.

29. The cell phone of claim 1 wherein the first integrated circuit includes:

a fourth sensor configured to measure a fourth parameter; and

a fifth sensor configured to measure a fifth parameter wherein the first, second, third, fourth, and fifth parameters are different.

30. The cell phone of claim 1 wherein the first integrated circuit includes:

a fourth sensor configured to measure a fourth parameter;

a fifth sensor configured to measure a fifth parameter; and

a sixth sensor configured to measure a sixth parameter wherein the first, second, third, fourth, fifth, and sixth parameters are different.

31. The cell phone of claim 1 wherein the first integrated circuit includes:

a fourth sensor configured to measure a fourth parameter;

a fifth sensor configured to measure a fifth parameter;

a sixth sensor configured to measure a sixth parameter; and

a seventh sensor configured to measure a seventh parameter wherein the first, second, third, fourth, fifth, sixth, and seventh parameters are different.

32. The cell phone of claim 11 wherein the layer is etched and wherein the layer forms a cap on one of the first, second, or third sensors and wherein the layer forms a moving plate on one of the first, second, or third sensors.

33. The cell phone of claim 11 wherein the layer is configured to flex in at least one of the first, second, or third sensors, and wherein the layer is configured not to flex in at least one of the first, second, or third sensors.

34. The cell phone of claim 11 wherein the layer seals a cavity in at least two of the first, second, or third sensors and wherein the volume of at least one of the first, second, or third sensors is fixed and wherein the volume of at least one of the first, second, or third sensors is configured to vary according to stimulus.

35. The cell phone of claim 11 wherein one of the first, second, or third sensors is an inertial sensor and wherein the layer is an electrode of one of the first, second, or third sensors.

36. The cell phone of claim 28 further including a second integrated circuit having at least one sensor wherein the second integrated circuit is coupled to the first integrated circuit via conductive bumps or wirebonds.

37. The cell phone of claim 28 further a third integrated circuit having control circuitry wherein the first integrated circuit is coupled to the first integrated circuit via conductive bumps or wirebonds.

38. The cell phone of claim 28 wherein at least one of the first, second, third, and fourth sensors is exposed to an external environment and wherein at least one of the first, second, third, and fourth sensors is sealed from the external environment.

39. The cell phone of claim 28 wherein the first integrated circuit comprises at least four of an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, or biological sensor.

40. The cell phone of claim 28 wherein at least two of the first, second, third, or fourth sensors of the first integrated circuit are sealed with one or more deposited layers and wherein the one or more deposited layers comprise at least one of polycrystalline silicon, epitaxially deposited silicon, amorphous silicon, silicon germanium, germanium, silicon nitride, silicon oxynitride, silicon carbide, metal, polyimide, parylene, silicon oxide, PSG (phosphosilicate glass), BSG (borosilicate glass), BPSG (Boron Phosphosilicate Glass), PECVD Oxide, TEOS (tetraethylorthosilicate), plasma assisted oxide, laser assisted CVD oxide, sputtered oxide, diamond, polymer, photoresist, or metals such as aluminum, gold, copper, silver, tungsten, nickel, titanium, chrome, platinum, or iridium.

41. The cell phone of claim 28 wherein the first integrated circuit comprises either two MEMS sensors, three MEMS sensors, or four MEMS sensors.

42. The cell phone of claim 28 wherein a layer is shared in common with two, three, or four of the first, second, third, or fourth sensors of the first integrated circuit.

43. The cell phone of claim 40 wherein at least two of the first, second, third, or fourth sensors of the first integrated circuit is sealed by depositing a layer using at least one of low pressure chemical vapor deposition, plasma enhanced chemical vapor deposition, atmospheric pressure chemical vapor deposition, sub atmospheric chemical vapor deposition, plasma assisted chemical vapor deposition, laser assisted chemical vapor deposition, physical vapor deposition, atomic layer deposition, metallo organic chemical vapor deposition, or molecular beam epitaxy or wherein the first sensor can be sealed using one of sputtering, evaporating, spin-coating, electro-plating, or spray coating a material on the integrated circuit.

44. The cell phone of claim 42 wherein the layer is etched and wherein the layer forms a cap on one of the first, second, third, or fourth sensors and wherein the layer forms a moving plate on one of the first, second, third sensors, or fourth sensors.

45. The cell phone of claim 42 wherein the layer is configured to flex in at least one of the first, second, third, or fourth sensors, and wherein the layer is configured not to flex in at least one of the first, second, third, or fourth sensors.

46. The cell phone of claim 42 wherein the layer seals a cavity in at least two of the first, second, third, or fourth sensors and wherein the volume of at least one of the first, second, third, or fourth sensors is fixed and wherein the volume of at least one of the first, second, third, or fourth sensors is configured to vary according to stimulus.

47. The cell phone of claim 42 wherein one of the first, second, third, or fourth sensors is an inertial sensor and wherein the layer is an electrode of one of the first, second, third, or fourth sensors.

48. The cell phone of claim 29 further including a second integrated circuit having at least one sensor wherein the second integrated circuit is coupled to the first integrated circuit via conductive bumps or wirebonds.

49. The cell phone of claim 29 further a third integrated circuit having control circuitry wherein the first integrated circuit is coupled to the first integrated circuit via conductive bumps or wirebonds.

50. The cell phone of claim 29 wherein at least one of the first, second, third, fourth, or fifth sensors is exposed to an external environment and wherein at least one of the first, second, third, fourth, or fifth sensors is sealed from the external environment.

51. The cell phone of claim 29 wherein the first integrated circuit comprises at least five of an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, or biological sensor.

52. The cell phone of claim 29 wherein at least two of the first, second, third, fourth, or fifth sensors of the first integrated circuit are sealed with one or more deposited layers and wherein the one or more deposited layers comprise at least one of polycrystalline silicon, epitaxially deposited silicon, amorphous silicon, silicon germanium, germanium, silicon nitride, silicon oxynitride, silicon carbide, metal, polyimide, parylene, silicon oxide, PSG (phosphosilicate glass), BSG (borosilicate glass), BPSG (Boron Phosphosilicate Glass), PECVD Oxide, TEOS (tetraethylorthosilicate), plasma assisted oxide, laser assisted CVD oxide, sputtered oxide, diamond, polymer, photoresist, or metals such as aluminum, gold, copper, silver, tungsten, nickel, titanium, chrome, platinum, or iridium.

53. The cell phone of claim 29 wherein the first integrated circuit comprises either two MEMS sensors, three MEMS sensors, four MEMS sensors, or five MEMS sensors.

54. The cell phone of claim 29 wherein a layer is shared in common with two, three, four, or five of the first, second, third, fourth, or fifth sensors of the first integrated circuit.

55. The cell phone of claim 52 wherein at least two of the first, second, third, fourth, or fifth sensors of the first integrated circuit is sealed by depositing a layer using at least one of low pressure chemical vapor deposition, plasma enhanced chemical vapor deposition, atmospheric pressure chemical vapor deposition, sub atmospheric chemical vapor deposition, plasma assisted chemical vapor deposition, laser assisted chemical vapor deposition, physical vapor deposition, atomic layer deposition, metallo organic chemical vapor deposition, or molecular beam epitaxy or wherein the first sensor can be sealed using one of sputtering, evaporating, spin-coating, electro-plating, or spray coating a material on the integrated circuit.

56. The cell phone of claim 54 wherein the layer is etched and wherein the layer forms a cap on one of the first, second, third, fourth, or fifth sensors and wherein the layer forms a moving plate on one of the first, second, third sensors, fourth, or fifth sensors.

57. The cell phone of claim 54 wherein the layer is configured to flex in at least one of the first, second, third, fourth, or fifth sensors, and wherein the layer is configured not to flex in at least one of the first, second, third, fourth, or fifth sensors.

58. The cell phone of claim 54 wherein the layer seals a cavity in at least two of the first, second, third, fourth, or fifth sensors and wherein the volume of at least one of the first, second, third, fourth, or fifth sensors is fixed and wherein the volume of at least one of the first, second, third, fourth, or fifth sensors is configured to vary according to stimulus.

59. The cell phone of claim 54 wherein one of the first, second, third, fourth, or fifth sensors is an inertial sensor and wherein the layer is an electrode of one of the first, second, third, fourth, or fifth sensors.

60. The cell phone of claim 30 further including a second integrated circuit having at least one sensor wherein the second integrated circuit is coupled to the first integrated circuit via conductive bumps or wirebonds.

61. The cell phone of claim 30 further a third integrated circuit having control circuitry wherein the first integrated circuit is coupled to the first integrated circuit via conductive bumps or wirebonds.

62. The cell phone of claim 30 wherein at least one of the first, second, third, fourth, fifth, or sixth sensors is exposed to an external environment and wherein at least one of the first, second, third, fourth, fifth, or sixth sensors is sealed from the external environment.

63. The cell phone of claim 30 wherein the first integrated circuit comprises at least six of an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, or biological sensor.

64. The cell phone of claim 30 wherein at least two of the first, second, third, fourth, fifth, or sixth sensors of the first integrated circuit are sealed with one or more deposited layers and wherein the one or more deposited layers comprise at least one of polycrystalline silicon, epitaxially deposited silicon, amorphous silicon, silicon germanium, germanium, silicon nitride, silicon oxynitride, silicon carbide, metal, polyimide, or parylene.

65. The cell phone of claim 30 wherein the first integrated circuit comprises either two MEMS sensors, three MEMS sensors, four MEMS sensors, five MEMS sensors, or six MEMS sensors.

66. The cell phone of claim 30 wherein a layer is shared in common with two, three, four, five, or six of the first, second, third, fourth, fifth, and sixth sensors of the first integrated circuit.

67. The cell phone of claim 64 wherein at least two of the first, second, third, fourth, fifth, or sixth sensors of the first integrated circuit is sealed by depositing a layer using at least one of low pressure chemical vapor deposition, plasma enhanced chemical vapor deposition, atmospheric pressure chemical vapor deposition, sub atmospheric chemical vapor deposition, plasma assisted chemical vapor deposition, laser assisted chemical vapor deposition, physical vapor deposition, atomic layer deposition, metallo organic chemical vapor deposition, or molecular beam epitaxy or wherein the first sensor can be sealed using one of sputtering, evaporating, spin-coating, electro-plating, or spray coating a material on the integrated circuit.

68. The cell phone of claim 66 wherein the layer is etched and wherein the layer forms a cap on one of the first, second, third, fourth, fifth, or sixth sensors and wherein the layer forms a moving plate on one of the first, second, third sensors, fourth, fifth, or sixth sensors.

69. The cell phone of claim 66 wherein the layer is configured to flex in at least one of the first, second, third, fourth, fifth, or sixth sensors, and wherein the layer is configured not to flex in at least one of the first, second, third, fourth, fifth, or sixth sensors.

70. The cell phone of claim 66 wherein the layer seals a cavity in at least two of the first, second, third, fourth, fifth, or sixth sensors and wherein the volume of at least one of the first, second, third, fourth, or fifth sensors is fixed and wherein the volume of at least one of the first, second, third, fourth, fifth, or sixth sensors is configured to vary according to stimulus.

71. The cell phone of claim 66 wherein one of the first, second, third, fourth, fifth, or sixth sensors is an inertial sensor and wherein the layer is an electrode of one of the first, second, third, fourth, fifth, or sixth sensors.

72. The cell phone of claim 66 wherein one of the first, second, third, fourth, fifth, sixth, or seventh sensors is an inertial sensor and wherein the layer is an electrode of one of the first, second, third, fourth, fifth, sixth, or seventh sensors.

73. The cell phone of claim 31 further including a second integrated circuit having at least one sensor wherein the second integrated circuit is coupled to the first integrated circuit via conductive bumps or wirebonds.

74. The cell phone of claim 31 further a third integrated circuit having control circuitry wherein the first integrated circuit is coupled to the first integrated circuit via conductive bumps or wirebonds.

75. The cell phone of claim 31 wherein at least one of the first, second, third, fourth, fifth, sixth, or seventh sensors is exposed to an external environment and wherein at least one of the first, second, third, fourth, fifth, sixth, or seventh sensors is sealed from the external environment.

76. The cell phone of claim 31 wherein the first integrated circuit comprises at least seven of an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, or biological sensor.

77. The cell phone of claim 31 wherein at least two of the first, second, third, fourth, fifth, sixth, or seventh sensors of the first integrated circuit are sealed with one or more deposited layers and wherein the one or more deposited layers comprise at least one of polycrystalline silicon, epitaxially deposited silicon, amorphous silicon, silicon germanium, germanium, silicon nitride, silicon oxynitride, silicon carbide, metal, polyimide, or parylene.

78. The cell phone of claim 31 wherein the first integrated circuit comprises either two MEMS sensors, three MEMS sensors, four MEMS sensors, five MEMS sensors, six MEMS sensors, or seven MEMS sensors.

79. The cell phone of claim 31 wherein a layer is shared in common with two, three, four, five, six, or seven of the first, second, third, fourth, fifth, sixth, or seventh sensors of the first integrated circuit.

80. The cell phone of claim 77 wherein at least two of the first, second, third, fourth, fifth, sixth, or seventh sensors of the first integrated circuit is sealed by depositing a layer using at least one of low pressure chemical vapor deposition, plasma enhanced chemical vapor deposition, atmospheric pressure chemical vapor deposition, sub atmospheric chemical vapor deposition, plasma assisted chemical vapor deposition, laser assisted chemical vapor deposition, physical vapor deposition, atomic layer deposition, metallo organic chemical vapor deposition, or molecular beam epitaxy or wherein the first sensor can be sealed using one of sputtering, evaporating, spin-coating, electro-plating, or spray coating a material on the integrated circuit.

81. The cell phone of claim 79 wherein the layer is etched and wherein the layer forms a cap on one of the first, second, third, fourth, fifth, sixth, or seventh sensors and wherein the layer forms a moving plate on one of the first, second, third sensors, fourth, fifth, sixth, or seventh sensors.

82. The cell phone of claim 79 wherein the layer is configured to flex in at least one of the first, second, third, fourth, fifth, sixth, or seventh sensors, and wherein the layer is configured not to flex in at least one of the first, second, third, fourth, fifth, sixth, or seventh sensors.

83. The cell phone of claim 79 wherein the layer seals a cavity in at least two of the first, second, third, fourth, fifth, sixth, or seventh sensors and wherein the volume of at least one of the first, second, third, fourth, fifth, sixth or seventh sensors is fixed and wherein the volume of at least one of the first, second, third, fourth, or fifth sensors is configured to vary according to stimulus.