Low-stress low-hydrogen LPCVD silicon nitride
First Claim
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1. A method of forming a Gallium-Nitride Field Effect Transistor (GaN FET) device, comprising the steps:
- forming a stack of gallium nitride and aluminum gallium nitride layers as a substrate;
forming a cap layer of gallium nitride on the stack;
forming a silicon nitride layer on a first surface of the cap layer using a low-pressure chemical vapor deposition (LPCVD) process, the silicon nitride layer having the following properties;
a silicon;
nitrogen atomic ratio within 2 percent of the ratio 3;
4;
a stress of 600 megapascals (MPa) to 1000 MPa; and
a hydrogen content of less than 5 atomic percent;
forming an etch mask over the silicon nitride layer;
removing the silicon nitride layer exposed by the etch mask;
subsequently removing the etch mask; and
forming a gate of the GaN FET over the cap layer, wherein the gate is in direct contact with the first surface of the cap layer at a center portion of the gate and partially overlaps the silicon nitride layer at end portions of the gate.
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Abstract
A microelectronic device contains a high performance silicon nitride layer which is stoichiometric within 2 atomic percent, has a low stress of 600 MPa to 1000 MPa, and has a low hydrogen content, less than 5 atomic percent, formed by an LPCVD process. The LPCVD process uses ammonia and dichlorosilane gases in a ratio of 4 to 6, at a pressure of 150 millitorr to 250 millitorr, and at a temperature of 800° C. to 820° C.
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Citations
11 Claims
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1. A method of forming a Gallium-Nitride Field Effect Transistor (GaN FET) device, comprising the steps:
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forming a stack of gallium nitride and aluminum gallium nitride layers as a substrate; forming a cap layer of gallium nitride on the stack; forming a silicon nitride layer on a first surface of the cap layer using a low-pressure chemical vapor deposition (LPCVD) process, the silicon nitride layer having the following properties; a silicon;
nitrogen atomic ratio within 2 percent of the ratio 3;
4;a stress of 600 megapascals (MPa) to 1000 MPa; and a hydrogen content of less than 5 atomic percent; forming an etch mask over the silicon nitride layer; removing the silicon nitride layer exposed by the etch mask; subsequently removing the etch mask; and forming a gate of the GaN FET over the cap layer, wherein the gate is in direct contact with the first surface of the cap layer at a center portion of the gate and partially overlaps the silicon nitride layer at end portions of the gate. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of forming a Gallium-Nitride Field Effect Transistor (GaN FET) device, comprising the steps:
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forming a stack of gallium nitride and aluminum gallium nitride layers as a substrate; forming a cap layer of gallium nitride on the stack; forming a silicon nitride layer on a first surface of the cap layer using a low-pressure chemical vapor deposition (LPCVD) process by; placing the substrate in an LPCVD furnace; heating the substrate to a temperature of 800°
C. to 820°
C. in the LPCVD furnace;providing ammonia gas and dichlorosilane gas to a reaction chamber at a ratio of 4 to 6, and at a pressure of 150 millitorr to 250 millitorr; and removing the substrate from the LPCVD furnace; forming an etch mask over the silicon nitride layer; removing the silicon nitride layer exposed by the etch mask; subsequently removing the etch mask; and forming a gate structure of the GaN FET over the cap layer, wherein the gate structure is in direct contact with the first surface of the cap layer at a center portion of the gate structure and partially overlaps the silicon nitride layer at end portions of the gate structure. - View Dependent Claims (8, 9, 10, 11)
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Specification