Growth of large aluminum nitride single crystals with thermal-gradient control
First Claim
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1. A crystal-growth system comprising:
- a growth chamber for the formation of a single-crystal semiconductor material via sublimation-recondensation therewithin along a growth direction, the growth chamber having a lid;
a heating apparatus for heating the growth chamber; and
a plurality of thermal shields disposed over the lid of the growth chamber, the plurality of thermal shields comprising (i) a first thermal shield defining a first opening therethrough and (ii) a second thermal shield defining a second opening therethrough larger than the first opening,wherein the first thermal shield is disposed between the lid of the growth chamber and the second thermal shield.
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Abstract
In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.
246 Citations
24 Claims
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1. A crystal-growth system comprising:
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a growth chamber for the formation of a single-crystal semiconductor material via sublimation-recondensation therewithin along a growth direction, the growth chamber having a lid; a heating apparatus for heating the growth chamber; and a plurality of thermal shields disposed over the lid of the growth chamber, the plurality of thermal shields comprising (i) a first thermal shield defining a first opening therethrough and (ii) a second thermal shield defining a second opening therethrough larger than the first opening, wherein the first thermal shield is disposed between the lid of the growth chamber and the second thermal shield. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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Specification