Growth of large aluminum nitride single crystals with thermal-gradient control

• US 9,580,833 B2
• Filed: 04/15/2015
• Issued: 02/28/2017
• Est. Priority Date: 06/30/2010
• Status: Active Grant

• Current Assignee: Crystal IS, Inc. (Asahi Kasei Corporation)
• Original Assignee: Crystal IS, Inc. (Asahi Kasei Corporation)
• Inventors: Bondokov, Robert T., Rao, Shailaja P., Gibb, Shawn R., Schowalter, Leo J.
• Primary Examiner(s): Bratland, Jr., Kenneth A
• Application Number:
  US14/686,812
• Publication Number:
  US 20150218728A1
• Time in Patent Office: 685 Days
• Field of Search: 117/84, 117/88, 117101-102, 117/200, 117/204, 117/937, 117/952
• US Class Current: 1/1
• CPC Class Codes: C30B 23/002 Controlling or regulating
• CPC Class Codes: C30B 23/025 characterised by the substrate
• CPC Class Codes: C30B 23/06 Heating of the deposition chamber, the substrate or the materials to be evaporated
• CPC Class Codes: C30B 29/403 AIII-nitrides

Abstract

In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.

Claims

1. A crystal-growth system comprising:

a growth chamber for the formation of a single-crystal semiconductor material via sublimation-recondensation therewithin along a growth direction, the growth chamber having a lid;

a heating apparatus for heating the growth chamber; and

a plurality of thermal shields disposed over the lid of the growth chamber, the plurality of thermal shields comprising (i) a first thermal shield defining a first opening therethrough and (ii) a second thermal shield defining a second opening therethrough larger than the first opening,

wherein the first thermal shield is disposed between the lid of the growth chamber and the second thermal shield.

2. The system of claim 1, wherein at least two of the thermal shields have different thicknesses.

3. The system of claim 1, wherein a thickness of each of the thermal shields ranges from approximately 0.125 mm to approximately 0.5 mm.

4. The system of claim 1, wherein at least one of the thermal shields comprises a refractory material.

5. The system of claim 1, wherein at least one of the thermal shields comprises tungsten.

6. The system of claim 1, wherein the thermal shields are arranged with substantially equal spacings therebetween.

7. The system of claim 1, further comprising, disposed within the growth chamber, a seed for nucleating the single-crystal semiconductor material thereon.

8. The system of claim 7, wherein a diameter of the seed is greater than approximately 25 mm.

9. The system of claim 7, wherein the seed comprises aluminum nitride.

10. The system of claim 7, wherein an area of the first opening is smaller than a surface area of the seed.

11. The system of claim 1, wherein a thickness of the lid is less than approximately 0.5 mm.

12. The system of claim 1, wherein the lid comprises tungsten.

13. The system of claim 1, further comprising, disposed within the growth chamber, solid source material to be sublimated to form the single-crystal semiconductor material.

14. The system of claim 13, wherein the solid source material comprises polycrystalline aluminum nitride.

15. The system of claim 1, wherein the thermal shields are arranged to form, within the growth chamber, (i) a first non-zero thermal gradient in a direction substantially parallel to the growth direction and (ii) a second non-zero thermal gradient in a direction substantially perpendicular to the growth direction.

16. The system of claim 15, wherein a ratio of the first thermal gradient to the second thermal gradient is less than 10.

17. The system of claim 15, wherein the second thermal gradient is larger than 4°

C./cm.

18. The system of claim 15, wherein the second thermal gradient is smaller than 85°

C./cm.

19. The system of claim 15, wherein the ratio of the first thermal gradient to the second thermal gradient is greater than 1.2.

20. The system of claim 15, wherein the first thermal gradient is larger than 5°

C./cm.

21. The system of claim 15, wherein the first thermal gradient is smaller than 100°

C./cm.

22. The system of claim 15, wherein the ratio of the first thermal gradient to the second thermal gradient is less than 5.5.

23. The system of claim 15, wherein the ratio of the first thermal gradient to the second thermal gradient is less than 3.

24. The system of claim 1, wherein the growth chamber comprises at least one of tungsten, rhenium, tantalum, tantalum carbide, tantalum nitride, hafnium, or hafnium nitride.