Systems and methods for reverse pulsing
First Claim
1. A method comprising:
- generating a first radio frequency (RF) pulsed signal to have a high state and a low state, wherein the high state of the first RF pulsed signal has a greater amount of power than the low state of the first RF pulsed signal;
providing the first RF pulsed signal to a top coil electrode associated with a plasma chamber;
generating a second RF pulsed signal to have a low state for a first time period during which the first RF pulsed signal is in the high state and to have a high state for a second time period during which the first RF pulsed signal is in the low state, wherein the high state of the second RF pulsed signal has a greater amount of power than the low state of the second RF pulsed signal, wherein generating the second RF pulsed signal includes;
transitioning the second RF pulsed signal from the low state to the high state at a time of transition of the first RF pulsed signal from the high state to the low state; and
transitioning the second RF pulsed signal from the high state to the low state at a time of transition of the first RF pulsed signal from the low state to the high state,wherein said transitioning the second RF pulsed signal from the low state to the high state at the time of transition of the first RF pulsed signal from the high state to the low state is performed during a conductor etch to control directionality of ions within plasma and to reduce a temperature of electrons within the plasma;
providing the second RF pulsed signal to a bottom electrode of the plasma chamber.
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Abstract
Systems and methods for reverse pulsing are described. One of the methods includes receiving a digital signal having a first state and a second state. The method further includes generating a transformer coupled plasma (TCP) radio frequency (RF) pulsed signal having a high state when the digital signal is in the first state and having a low state when the digital signal is in the second state. The method includes providing the TCP RF pulsed signal to one or more coils of a plasma chamber, generating a bias RF pulsed signal having a low state when the digital signal is in the first state and having a high state when the digital signal is in the second state, and providing the bias RF pulsed signal to a chuck of the plasma chamber.
74 Citations
18 Claims
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1. A method comprising:
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generating a first radio frequency (RF) pulsed signal to have a high state and a low state, wherein the high state of the first RF pulsed signal has a greater amount of power than the low state of the first RF pulsed signal; providing the first RF pulsed signal to a top coil electrode associated with a plasma chamber; generating a second RF pulsed signal to have a low state for a first time period during which the first RF pulsed signal is in the high state and to have a high state for a second time period during which the first RF pulsed signal is in the low state, wherein the high state of the second RF pulsed signal has a greater amount of power than the low state of the second RF pulsed signal, wherein generating the second RF pulsed signal includes; transitioning the second RF pulsed signal from the low state to the high state at a time of transition of the first RF pulsed signal from the high state to the low state; and transitioning the second RF pulsed signal from the high state to the low state at a time of transition of the first RF pulsed signal from the low state to the high state, wherein said transitioning the second RF pulsed signal from the low state to the high state at the time of transition of the first RF pulsed signal from the high state to the low state is performed during a conductor etch to control directionality of ions within plasma and to reduce a temperature of electrons within the plasma; providing the second RF pulsed signal to a bottom electrode of the plasma chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method comprising:
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receiving a digital signal periodically transitioning between a first state and a second state; and providing a first radio frequency (RF) pulsed signal to a top coil electrode associated with a plasma chamber and a second RF pulsed signal to a bottom electrode of the plasma chamber, wherein said providing the first RF pulsed signal includes synchronizing based on the digital signal a high state of the first RF pulsed signal with a low state of the second RF pulsed signal and a low state of the first RF pulsed signal with a high state of the second RF pulsed signal, wherein synchronizing based on the digital signal includes transitioning the second RF pulsed signal from the low state to the high state at a time of transition of the first RF pulsed signal from the high state to the low state and transitioning the second RF pulsed signal from the high state to the low state at a time of transition of the first RF pulsed signal from the low state to the high state, wherein said transitioning the second RF pulsed signal from the low state to the high state at the time of transition of the first RF pulsed signal from the high state to the low state is performed during a conductor etch to control directionality of ions within plasma and to reduce a temperature of electrons within the plasma, wherein the high state of the first RF pulsed signal has a greater amount of power than the low state of the first RF pulsed signal, wherein the high state of the second RF pulsed signal has a greater amount of power than the low state of the second RF pulsed signal. - View Dependent Claims (15, 16, 17, 18)
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Specification