Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films

• US 9,583,359 B2
• Filed: 04/04/2014
• Issued: 02/28/2017
• Est. Priority Date: 04/04/2014
• Status: Active Grant

• Current Assignee: Fujifilm Electronic Materials USA Incorporated (Fujifilm Holdings Corporation)
• Original Assignee: Fujifilm Planar Solutions, LLC (Fujifilm Holdings Corporation)
• Inventors: Mishra, Abhudaya, Wang, Luling
• Primary Examiner(s): OLSEN, ALLAN W
• Application Number:
  US14/245,286
• Publication Number:
  US 20150284593A1
• Time in Patent Office: 1,061 Days
• Field of Search: None
• US Class Current: 1/1
• CPC Class Codes: C09G 1/02 containing abrasives or grinding agents abrasives as such C09K3/14; polishing of semi-conductors H01L
• CPC Class Codes: H01L 21/31053 involving a dielectric removal step
• CPC Class Codes: H01L 21/31055 the removal being a chemical etching step, e.g. dry etching etching per se H01L21/311

Abstract

Stable aqueous polishing compositions that can selectively polish silicon nitride (SiN) films and nearly stop (or polish at very low rates) on silicon oxide films are provided herein. The compositions comprise an anionic abrasive, a nitride removal rate enhancer containing a carboxyl or carboxylate group, water, and optionally, an anionic polymer. The synergistic combination of anionic (negatively charged) abrasives and the nitride removal rate enhancer provide beneficial charge interactions with the dielectric films during CMP, a high SiN rate and selectivity enhancement (over oxide), and stable colloidal dispersed slurries.

Claims

1. A polishing composition, comprising:

a) an anionic abrasive selected from the group consisting of alumina, silica, titania, ceria, zirconia, co-formed products thereof, and mixtures thereof;

b) a nitride removal rate enhancer comprising a carboxylic acid or a carboxyl/carboxylate group for increasing silicon nitride rates;

c) water; and

(d) optionally, an anionic polymer;

wherein the polishing composition has a pH range of about 2 to about 6.5, and wherein the anionic abrasive has a zeta potential in the range of 0 mV to −

100 mV across the entire pH range,

wherein the anionic abrasive comprises terminal groups of generic formulation (I);

—

O_x—

Y—

(CH₂)_z-Anionic group, 

 

(I)

wherein x and z are integers, and Y is selected from the group consisting of Aluminum (Al), Silicon (Si), Titanium (Ti), Cerium (Ce), Zirconium (Zr), co-formed products thereof, and mixtures thereof, and the Anionic group is an acid,

wherein the polishing composition has a zeta potential in the range of −

5 mV to −

100 mV, and

wherein the composition exhibits a first rate of removal of silicon nitride, and a second rate of removal of silicon oxide, and a ratio of said first rate to said second rate is 9 or higher.

2. The polishing composition of claim 1, wherein the anionic abrasive is selected from the group consisting of anionic colloidal silica, acid immobilized non-ionic silica to generate anionic silica, and electrostatically negatively charged colloidal mixtures thereof.

3. The polishing composition of claim 1, wherein the mean particle size of the anionic abrasive is about 1 nm to 1000 nm.

4. The polishing composition of claim 1, wherein the mean particle size of the anionic abrasive is about 1 nm to 50 nm.

5. The polishing composition of claim 1, wherein the polishing composition has a zeta potential in the range of −

15 mV to −

70 mV.

6. The polishing composition of claim 1, wherein the composition has a conductivity in the range of 0.1 to 10 milli-Siemens per centimeter (mS/cm).

7. The polishing composition in claim 1, wherein the abrasive is present in the composition in the amount of 0.1 wt % to 30 wt %, based on the total weight of the composition.

8. The polishing composition of claim 1, wherein the nitride removal rate enhancer is selected from the group consisting of gluconic acid, lactic acid, citric acid, tartaric acid, malic acid, glycolic acid, malonic acid, formic acid, oxalic acid, acetic acid, propionic acid, peracetic acid, succinic acid, lactic acid, potassium acetate, potassium citrate, amino acetic acid, phenoxyacetic acid, tetrahydrofurancarboxylic acid, diglycolic acid, glyceric acid, tricine, histidine, tyrosine, benzoic acid, and any mixtures thereof.

9. The polishing composition of claim 1, wherein the nitride removal rate enhancer is present in the composition in an amount of 0.01 wt % to 20 wt %, based on the total weight of the composition.

10. The polishing composition according to claim 1, wherein the nitride removal rate enhancer is present in the concentrate in an amount of 0.01 wt % to 3 wt %, based on the total weight of the composition.

11. The polishing composition according to claim 1, wherein the anionic polymer is present.

12. The polishing composition according to claim 11, wherein the anionic polymer is an anionic surfactant with an average molar mass of about 120 g/mol or greater.

13. The polishing composition according to claim 12, wherein the anionic surfactant contains a sulfonate (—

SO₃) or phosphate (—

PO₄) moiety and additionally hydrocarbon groups and combinations thereof.

14. The polishing composition according to claim 12, wherein the anionic surfactant is selected from the group consisting of an alkylbenzene sulfonic acid, an alkylbenzene sulfonate, an alkyl sulfate, an alkyl ether sulfate and any combinations thereof.

15. The polishing composition according to claim 12, wherein the anionic surfactant is in the amount of 0.001 wt % to 5 wt %, based on the total weight of the composition.

16. The polishing composition according to claim 1, further comprising a base as a pH adjustor.

17. The polishing composition according to claim 16, wherein the base is selected from the group consisting of potassium hydroxide, ammonium hydroxide, triethanol ammine, tetrabutyl ammonium hydroxide, tetramethyl ammonium hydroxide, sodium hydroxide, cesium hydroxide, and any combinations thereof.

18. The polishing composition of claim 1, wherein the composition can be diluted to 2×

, 3×

or greater at point of use (POU) before polishing, without any deterioration in polishing performance of POU when compared to the polishing composition before dilution.

19. The polishing composition of claim 1, wherein the acid is selected from the group consisting of sulfonic acid, phosphoric acid, carboxylic acid, and anionic salts of sulfonic acid, phosphoric acid, or carboxylic acid.

20. A polishing composition, comprising:

a) anionic colloidal alumina;

b) a nitride removal rate enhancer comprising a carboxylic acid or a carboxyl/carboxylate group for increasing silicon nitride rates;

c) water; and

(d) optionally, an anionic polymer;

wherein the polishing composition has a pH range of about 2 to about 6.5, and wherein the anionic abrasive has a zeta potential in the range of 0 mV to −

100 mV across the entire pH range,

wherein the anionic abrasive comprises terminal groups of generic formulation (I);

—

O_x—

Y—

(CH₂)_z-Anionic group, 

 

(I)

wherein x and z are integers, and Y is selected from the group consisting of Aluminum (Al), Silicon (Si), Titanium (Ti), Cerium (Ce), Zirconium (Zr), co-formed products thereof, and mixtures thereof, and the Anionic group is an acid,

wherein the polishing composition has a zeta potential in the range of −

5 mV to −

100 mV.