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Method for manufacturing a semiconductor switching device with different local cell geometry

  • US 9,583,395 B2
  • Filed: 12/14/2015
  • Issued: 02/28/2017
  • Est. Priority Date: 06/20/2014
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, the method comprising:

  • providing a semiconductor substrate comprising an outer rim, an active area, and an edge termination region arranged between the active area and the outer rim;

    forming a plurality of switchable cells in the active area, wherein each of the switchable cells comprises a body region, a gate electrode structure, and a source region, wherein the active area defined by the switchable cells comprises at least a first switchable region having a specific gate-drain capacitance which is different to a specific gate-drain capacitance of a second switchable region;

    forming a source metallization in ohmic contact with the respective source region of the switchable cells; and

    forming a gate metallization in ohmic contact with the respective gate electrode structure of the switchable cells.

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