Method for manufacturing a semiconductor switching device with different local cell geometry
First Claim
1. A method for manufacturing a semiconductor device, the method comprising:
- providing a semiconductor substrate comprising an outer rim, an active area, and an edge termination region arranged between the active area and the outer rim;
forming a plurality of switchable cells in the active area, wherein each of the switchable cells comprises a body region, a gate electrode structure, and a source region, wherein the active area defined by the switchable cells comprises at least a first switchable region having a specific gate-drain capacitance which is different to a specific gate-drain capacitance of a second switchable region;
forming a source metallization in ohmic contact with the respective source region of the switchable cells; and
forming a gate metallization in ohmic contact with the respective gate electrode structure of the switchable cells.
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Abstract
A method for manufacturing a semiconductor device includes providing a semiconductor substrate having an outer rim, an active area, and an edge termination region arranged between the active area and the outer rim, and forming a plurality of switchable cells in the active area. Each of the switchable cells includes a body region, a gate electrode structure, and a source region. The active area defined by the switchable cells includes at least a first switchable region having a specific gate-drain capacitance which is different to a specific gate-drain capacitance of a second switchable region. The method further includes forming a source metallization in ohmic contact with the source regions of the switchable cells, and forming a gate metallization in ohmic contact with the gate electrode structures of the switchable cells.
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3 Claims
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1. A method for manufacturing a semiconductor device, the method comprising:
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providing a semiconductor substrate comprising an outer rim, an active area, and an edge termination region arranged between the active area and the outer rim;
forming a plurality of switchable cells in the active area, wherein each of the switchable cells comprises a body region, a gate electrode structure, and a source region, wherein the active area defined by the switchable cells comprises at least a first switchable region having a specific gate-drain capacitance which is different to a specific gate-drain capacitance of a second switchable region;forming a source metallization in ohmic contact with the respective source region of the switchable cells; and forming a gate metallization in ohmic contact with the respective gate electrode structure of the switchable cells. - View Dependent Claims (2, 3)
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Specification