Semiconductor device

• US 9,583,412 B2
• Filed: 05/09/2014
• Issued: 02/28/2017
• Est. Priority Date: 05/10/2013
• Status: Active Grant

• Current Assignee: Sumitomo Electric Device Innovations Incorporated (Sumitomo Corporation)
• Original Assignee: Sumitomo Electric Device Innovations Incorporated (Sumitomo Corporation)
• Inventors: Haematsu, Hitoshi
• Primary Examiner(s): Stark, Jarrett
• Assistant Examiner(s): Ahmed, Shahed
• Application Number:
  US14/274,507
• Publication Number:
  US 20140332865A1
• Time in Patent Office: 1,026 Days
• Field of Search: 257/288, 257/741, 257/792, 257/763, 257/773, 257/781, 438/15, 438/151, 438/197, 438/199, 438/612, 438/614
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/05567 the external layer being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 23/3192 Multilayer coating
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 29/41758 for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular H01L29/41733 - H01L29/4175 take precedence
• CPC Class Codes: H01L 29/452 on AIII-BV compounds
• CPC Class Codes: H01L 29/7786 with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/35121 Peeling or delaminating

Abstract

A semiconductor device includes a substrate having an edge, a semiconductor layer provided on a substrate, an electrode pad provided on the semiconductor layer, an inorganic insulating film having a first opening through which an upper surface of the electrode pad is exposed, and a resin film provided on the inorganic insulating film, the resin film having a second opening and a third opening separated from each other, where the upper surface of the electrode pad is exposed through the second opening, where the third opening is located between the second opening and the edge of the substrate, and where a bottom of the third opening is constituted by the resin film or the inorganic insulating film.

Claims

1. A semiconductor device comprising:

a substrate having an edge;

a semiconductor layer provided on the substrate;

an electrode pad provided on the semiconductor layer;

an inorganic insulating film formed on and in contact with the electrode pad, the inorganic insulating film having a first opening through which an upper surface of the electrode pad is exposed; and

a resin film provided on the inorganic insulating film, the resin film having a second opening and a third opening separated from each other,

wherein the upper surface of the electrode pad is exposed through the second opening,

wherein the third opening is located between the second opening and the edge of the substrate,

wherein a whole bottom of the third opening is exposed and consists of the resin film or the inorganic insulating film, and

wherein the resin film is formed of polyimide or benzocyclobutene.

2. The semiconductor device according to claim 1, wherein an edge of the first opening is located inside of the second opening.

3. The semiconductor device according to claim 1, wherein the inorganic insulating film is formed of silicon nitride or silicon oxynitride.

4. The semiconductor device according to claim 1, wherein the semiconductor layer forms a FET, and

wherein the electrode pad is a drain pad or a source pad of the FET.

5. The semiconductor device according to claim 1, wherein the upper surface of the electrode pad is formed of gold.

14. The semiconductor device according to claim 1, wherein a depth of the third opening is greater than a depth of the second opening.

17. The semiconductor device according to claim 2, wherein an edge of the second opening horizontally extends outward from the edge of the first opening.

6. A semiconductor device comprising:

a semiconductor layer provided on a substrate;

an electrode pad provided on the semiconductor layer;

an inorganic insulating film in contact with the electrode pad, the inorganic insulating film having a first opening through which an upper surface of the electrode pad is exposed; and

a resin film provided on the inorganic insulating film, the resin film having a second opening and a third opening,

wherein both the upper surface and a lateral side of the electrode pad are located at the inside of the second opening,

wherein a whole bottom of the third opening is exposed and consists of the resin film or the inorganic insulating film, and

wherein the resin film is formed of polyimide or benzocyclobutene.

7. The semiconductor device according to claim 6, wherein the third opening is formed by an upper surface of the inorganic insulating film being exposed.

8. The semiconductor device according to claim 6, wherein the inorganic insulating film is formed of silicon nitride or silicon oxynitride.

9. The semiconductor device according to claim 6, wherein the semiconductor layer forms a FET, and

the electrode pad is a drain pad or a source pad of the FET.

10. The semiconductor device according to claim 6, wherein the upper surface of the electrode pad is formed of gold.

15. The semiconductor device according to claim 6, wherein a depth of the third opening is greater than a depth of the second opening.

11. A semiconductor device comprising:

a substrate having an edge;

a semiconductor layer provided on the substrate;

an electrode pad provided on the semiconductor layer; and

a resin film provided on the electrode pad, the resin film having a first opening and a second opening separated from each other,

wherein an upper surface of the electrode pad is exposed through the first opening,

wherein the second opening is located between the first opening and the edge of the substrate,

wherein a whole bottom of the second opening is exposed and consists of the resin film or an inorganic insulating film, and

wherein the resin film is formed of polyimide or benzocyclobutene.

12. The semiconductor device according to claim 11, further comprising an inorganic insulating film located between the semiconductor layer and the resin film.

13. The semiconductor device according to claim 11, wherein the inorganic insulating film is formed of silicon nitride or silicon oxynitride.

16. The semiconductor device according to claim 11, wherein a depth of the second opening is greater than a depth of the first opening.